A. Dadgar

8.6k citations

240 papers · 7.4k · h-index 46

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 193
- GaN-based semiconductor devices and materials 193
Electrical and Electronic Engineering 125
- Semiconductor materials and devices 93
- Silicon Carbide Semiconductor Technologies 17

Co-authors: A. Krost (175 shared papers)J. Bläsing (103 shared papers)A. Diez (38 shared papers)J. Christen (60 shared papers)Thomas Hempel (35 shared papers)A. Krtschil (30 shared papers)J. Christen (17 shared papers)F. Bertram (35 shared papers)
Journals: Applied Physics Letters (49 papers)Journal of Crystal Growth (31 papers)Journal of Applied Physics (17 papers)Journal of Physics D Applied Physics (13 papers)physica status solidi (b) (9 papers)
Partner nations: Germany United States Pakistan

In The Last Decade

A. Dadgar

234 papers receiving 7.2k citations

Peers

Countries citing papers authored by A. Dadgar

Since Specialization

Citations

This map shows the geographic impact of A. Dadgar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Dadgar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Dadgar more than expected).

Fields of papers citing papers by A. Dadgar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Dadgar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Dadgar. The network helps show where A. Dadgar may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Dadgar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Dadgar Line = papers co-authored together A. Dadgar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 240 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness Japanese Journal of Applied Physics ·A. Dadgar, J. Bläsing, Annette Diez, A. Alam, M. Heuken, A. Krost	2000	292
2	GaN-based optoelectronics on silicon substrates Materials Science and Engineering B ·A. Krost, A. Dadgar	2002	248
3	Gallium nitride vertical power devices on foreign substrates: a review and outlook Journal of Physics D Applied Physics ·Yuhao Zhang, A. Dadgar, Tomás Palacios	2018	218
4	Template‐Assisted Large‐Scale Ordered Arrays of ZnO Pillars for Optical and Piezoelectric Applications Small ·Hong Jin Fan, Woo Lee, Robert Hauschild, Marin Alexe, (unknown), Roland W. Scholz, A. Dadgar, Kornelius Nielsch, H. Kalt, A. Krost, Margit Zacharias, U. Gösele	2006	202
5	GaN-Based Devices on Si physica status solidi (a) ·A. Krost, A. Dadgar	2002	166
6	Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking Applied Physics Letters ·A. Dadgar, M. Poschenrieder, J. Bläsing, Karsten Fehse, A. Diez, A. Krost	2002	165
7	High Si and Ge n-type doping of GaN doping - Limits and impact on stress Applied Physics Letters ·S. Fritze, A. Dadgar, H. De Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, A. Krost	2012	162
8	Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3 Physical Review B ·Martin Feneberg, Sarah Osterburg, Karsten Lange, Christian Lidig, B. Garke, R. Goldhahn, E. Richter, Carsten Netzel, M. Neumann, N. Esser, S. Fritze, H. De Witte, J. Bläsing, A. Dadgar, A. Krost	2014	149
9	Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach Nanotechnology ·Hong Jin Fan, Woo Lee, Roland W. Scholz, A. Dadgar, A. Krost, Kornelius Nielsch, Margit Zacharias	2005	135
10	High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111) Applied Physics Letters ·A. Dadgar, F. Schulze, J. Bläsing, A. Diez, A. Krost, Martin Neuburger, E. Kohn, I. Daumiller, M. Kunze	2004	128
11	GaN-based epitaxy on silicon: stress measurements physica status solidi (a) ·A. Krost, A. Dadgar, G. Straßburger, R. Clos	2003	127
12	MOVPE growth of GaN on Si(111) substrates Journal of Crystal Growth ·A. Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, F. A. Ponce, E. Kohn, A. Krost	2002	121
13	Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction New Journal of Physics ·A. Dadgar, F. Schulze, M. Wienecke, Aniko Gadanecz, J. Bläsing, Peter Veit, Thomas Hempel, A. Diez, J. Christen, A. Krost	2007	120
14	Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range Applied Physics Letters ·Christoph Hums, J. Bläsing, A. Dadgar, A. Diez, Thomas Hempel, J. Christen, A. Krost, K. Lorenz, E. Alves	2007	119
15	Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, Peter Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, Thomas Hempel, Tilo Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, A. Krost	2003	113
16	The origin of stress reduction by low-temperature AlN interlayers Applied Physics Letters ·J. Bläsing, A. Reiher, A. Dadgar, A. Diez, A. Krost	2002	111
17	Growth of blue GaN LED structures on 150-mm Si(111) Journal of Crystal Growth ·A. Dadgar, Christoph Hums, A. Diez, J. Bläsing, A. Krost	2006	110
18	Recording of cell action potentials with AlGaN∕GaN field-effect transistors Applied Physics Letters ·Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, A. Dadgar, A. Krost, M. Stutzmann, Martin Eickhoff	2005	108
19	Two charge states of the CN acceptor in GaN: Evidence from photoluminescence Physical review. B. ·M. A. Reshchikov, Mykhailo Vorobiov, D. O. Demchenko, Ümit Özgür, H. Morkoç̌, A. G. Lesnik, Marc P. Hoffmann, Florian Hörich, A. Dadgar, A. Strittmatter	2018	107
20	Atomic arrangement at the AlN/Si (111) interface Applied Physics Letters ·R. Liu, F. A. Ponce, A. Dadgar, A. Krost	2003	106

About A. Dadgar

A. Dadgar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 240 papers that have together received 7.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (193 papers), Semiconductor materials and devices (93 papers), Ga2O3 and related materials (79 papers), Metal and Thin Film Mechanics (62 papers), ZnO doping and properties (58 papers), Semiconductor Quantum Structures and Devices (54 papers), Acoustic Wave Resonator Technologies (30 papers) and Silicon Carbide Semiconductor Technologies (17 papers). The work is most often cited by research in Condensed Matter Physics (5.5k citations), Electronic, Optical and Magnetic Materials (3.0k citations), Materials Chemistry (3.1k citations), Mechanics of Materials (1.6k citations) and Electrical and Electronic Engineering (3.4k citations). A. Dadgar has collaborated with scholars based in Germany, United States and Pakistan. Frequent co-authors include A. Krost, J. Bläsing, A. Diez, J. Christen, Thomas Hempel, A. Krtschil, J. Christen, F. Bertram, F. Schulze and Tomás Palacios. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Journal of Physics D Applied Physics and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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