Bin Hou

2.9k citations

195 papers · 2.1k · h-index 26

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 143
- GaN-based semiconductor devices and materials 143
Electronic, Optical and Magnetic Materials 83
- Ga2O3 and related materials 77

Co-authors: Xiaohua Ma (124 shared papers)Yue Hao (103 shared papers)Ling Yang (106 shared papers)Meng Zhang (90 shared papers)Jiejie Zhu (49 shared papers)Minhan Mi (51 shared papers)Qing Zhu (60 shared papers)Mei Wu (65 shared papers)
Journals: IEEE Transactions on Electron Devices (26 papers)Applied Physics Letters (20 papers)IEEE Electron Device Letters (13 papers)AIP Advances (4 papers)Science China Information Sciences (3 papers)
Partner nations: China United Kingdom United States

In The Last Decade

Bin Hou

184 papers receiving 2.1k citations

Peers

Replace Jie Song with:

Jie Song China

Houqiang Fu United States

Muhammad Usman Pakistan

Shengjun Zhou China

Berthold Hahn Germany

D. Nirmal India

Chirag Gupta United States

Tongtong Zhu United Kingdom

Rangarajan Muralidharan India

Shizhong Zhou China

Bin Hou relative to Jie Song China Jie Song's profile →

Citations per field

00.5×2×3×3.7×

Jie Song · 1×

×2.1 2k/770

CMP

×2.4 752/315

EOMM

×2.3 1k/556

EEE

×1.1 369/344

AMPO

×0.6 358/639

MC

Citations per year

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Countries citing papers authored by Bin Hou

Since Specialization

Citations

This map shows the geographic impact of Bin Hou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bin Hou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bin Hou more than expected).

Fields of papers citing papers by Bin Hou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bin Hou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bin Hou. The network helps show where Bin Hou may publish in the future.

Co-authors

The 25 scholars most cited alongside Bin Hou, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bin Hou Line = papers co-authored together Bin Hou links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 195 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric IEEE Transactions on Electron Devices ·Jiejie Zhu, Xiaohua Ma, Yong Jun Xie, Bin Hou, Weiwei Chen, Jincheng Zhang, Yue Hao	2014	80
2	AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity IEEE Transactions on Electron Devices ·Hao Lu, Bin Hou, Ling Yang, Xuerui Niu, Zeyan Si, Meng Zhang, Mei Wu, Minhan Mi	2021	51
3	High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology IEEE Electron Device Letters ·Yang Lu, Xiaohua Ma, Ling Yang, Bin Hou, Minhan Mi, Meng Zhang, Jiaxin Zheng, Hengshuang Zhang	2018	48
4	A review of GaN RF devices and power amplifiers for 5G communication applications Fundamental Research ·Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng	2023	45
5	The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer IEEE Transactions on Electron Devices ·Ling Yang, Bin Hou, Fuchun Jia, Meng Zhang, Mei Wu, Xuerui Niu, Hao Lu, Chunzhou Shi	2022	44
6	High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination IEEE Electron Device Letters ·Hao Lu, Bin Hou, Ling Yang, Meng Zhang, Longge Deng, Mei Wu, Zeyan Si, Sen Huang	2021	41
7	Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance IEEE Electron Device Letters ·Jiejie Zhu, Lixiang Chen, Jie Jiang, Xiaoli Lu, Ling Yang, Bin Hou, Min Liao, Yichun Zhou	2017	40
8	Enhanced quasi-BIC refractive index sensing based on controlling the Fermi energy of Dirac semimetal metasurface Optics & Laser Technology ·Bin Hou, Zhiyou Li, Le He, Zao Yi, Qianju Song, Hua Yang, You-gen Yi, Hailiang Li	2023	40
9	Analysis of the Breakdown Characterization Method in GaN-Based HEMTs IEEE Transactions on Power Electronics ·Sheng Lei Zhao, Bin Hou, Wei Wei Chen, Min Han Mi, Jia Xin Zheng, Jin Cheng Zhang, Hua Xiao, Yue Hao	2015	39
10	Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region IEEE Transactions on Electron Devices ·Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang	2017	39
11	Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications IEEE Journal of the Electron Devices Society ·Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Hao Wu, Jielong Liu	2021	38
12	Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs IEEE Transactions on Electron Devices ·Meng Zhang, Xiaohua Ma, Ling Yang, Minhan Mi, Bin Hou, Yunlong He, Sheng Hao Wu, Yang Lu	2018	37
13	Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao	2014	34
14	SCROLL: SUPPORTING TO SHARE AND REUSE UBIQUITOUS LEARNING LOG IN THE CONTEXT OF LANGUAGE LEARNING Research and Practice in Technology Enhanced Learning ·Hiroaki Ogata, Mengmeng Li, Bin Hou, Noriko Uosaki, Moushir M. El-Bishouty, Yoneo Yano	2011	33
15	High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications IEEE Transactions on Electron Devices ·Chunzhou Shi, Ling Yang, Meng Zhang, Mei Wu, Bin Hou, Hao Lu, Fuchun Jia, Fei Guo	2023	32
16	Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis AIP Advances ·Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao	2014	30
17	Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Pengfei Wang, Xiaohua Ma, Minhan Mi, Meng Zhang, Jiejie Zhu, Yuwei Zhou, Sheng Hao Wu, Jielong Liu	2021	30
18	Enhanced g m and f T With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge IEEE Electron Device Letters ·Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, Qing Zhu, Yang Lu, Meng Zhang	2017	30
19	High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application IEEE Electron Device Letters ·Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Mei Wu, Bin Hou, Fuchun Jia	2023	30
20	90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application Applied Physics Letters ·Minhan Mi, Xiaohua Ma, Ling Yang, Bin Hou, Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Hao Wu	2017	29

About Bin Hou

Bin Hou is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 195 papers that have together received 2.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (143 papers), Ga2O3 and related materials (77 papers), Semiconductor materials and devices (50 papers), Radio Frequency Integrated Circuit Design (44 papers), Silicon Carbide Semiconductor Technologies (27 papers), Semiconductor Quantum Structures and Devices (27 papers), ZnO doping and properties (24 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (752 citations), Electrical and Electronic Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (369 citations) and Materials Chemistry (358 citations). Bin Hou has collaborated with scholars based in China, United Kingdom and United States. Frequent co-authors include Xiaohua Ma, Yue Hao, Ling Yang, Meng Zhang, Jiejie Zhu, Minhan Mi, Qing Zhu, Mei Wu, Hao Lu and Lixiang Chen. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters, AIP Advances and Science China Information Sciences.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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