D. Monroe

2.5k citations

39 papers · 1.7k · 1 hit paper · h-index 16

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Advanced Fiber Optic Sensors
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 36
- Semiconductor materials and devices 28
- Advancements in Semiconductor Devices and Circuit Design 17
- Integrated Circuits and Semiconductor Failure Analysis 8
- Photonic and Optical Devices 5
- Ferroelectric and Negative Capacitance Devices 5
Materials Chemistry 12
- Electronic and Structural Properties of Oxides 6
- Silicon Nanostructures and Photoluminescence 4

Co-authors: J. M. Hergenrother (6 shared papers)P. J. Silvėrman (13 shared papers)B. E. Weir (15 shared papers)Sang‐Hyun Oh (2 shared papers)P. J. Lemaire (3 shared papers)T. Erdoğan (2 shared papers)V. Mizrahi (2 shared papers)Eugene A. Fitzgerald (5 shared papers)
Journals: Applied Physics Letters (4 papers)IEEE Electron Device Letters (2 papers)Journal of Applied Physics (2 papers)Semiconductor Science and Technology (2 papers)Solid-State Electronics (2 papers)
Partner nations: United States Germany Norway

In The Last Decade

D. Monroe

39 papers receiving 1.6k citations

D. Monroe's Hit Papers

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Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si 1992 · 441 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1992 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Peers

Countries citing papers authored by D. Monroe

Since Specialization

Citations

This map shows the geographic impact of D. Monroe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Monroe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Monroe more than expected).

Fields of papers citing papers by D. Monroe

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Monroe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Monroe. The network helps show where D. Monroe may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Monroe, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Monroe Line = papers co-authored together D. Monroe links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 39 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe, P. J. Silvėrman, J. M. Kuo, A. R. Kortan, (unknown), B. E. Weir Hit paper breakdown →	1992	441
2	Decay of ultraviolet-induced fiber Bragg gratings Journal of Applied Physics ·T. Erdoğan, V. Mizrahi, P. J. Lemaire, D. Monroe	1994	345
3	Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs IEEE Electron Device Letters ·Sang‐Hyun Oh, D. Monroe, J. M. Hergenrother	2000	270
4	Ultra-thin gate dielectrics: they break down, but do they fail? B. E. Weir, P. J. Silvėrman, D. Monroe, K.S. Krisch, Muhammad A. Alam, G. B. Alers, T. Sorsch, G. Timp, F.H. Baumann, C.T. Liu, Yubin Ma, D. Hwang	2002	120
5	Gate oxide reliability projection to the sub-2 nm regime Semiconductor Science and Technology ·B. E. Weir, Md Ashraful Alam, J. Bude, P. J. Silvėrman, A. Ghetti, F.H. Baumann, P.W. Diodato, D. Monroe, T. Sorsch, G. Timp, Y. Ma, M.M. Brown, Abdullah Hamad, D. Hwang, Philip E. Mason	2000	66
6	Fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si Journal of Applied Physics ·Ya‐Hong Xie, Eugene A. Fitzgerald, D. Monroe, P. J. Silvėrman, G. P. Watson	1993	66
7	Tunneling current noise in thin gate oxides Applied Physics Letters ·G. B. Alers, K.S. Krisch, D. Monroe, B. E. Weir, A. M. Chang	1996	39
8	Generalizations of multiple trapping Philosophical Magazine B ·D. Monroe, M. A. Kastner	1983	39
9	Stress induced leakage current analysis via quantum yield experiments IEEE Transactions on Electron Devices ·A. Ghetti, M. Alam, J. Bude, D. Monroe, E. Sangiorgi, H. Vaidya	2000	35
10	Electrical characterization of an ultrahigh concentration boron delta-doping layer Applied Physics Letters ·B. E. Weir, L. C. Feldman, D. Monroe, Harald Großmann, Randall L. Headrick, T. R. Hart	1994	31
11	From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects Japanese Journal of Applied Physics ·Ya‐Hong Xie, Eugene A. Fitzgerald, D. Monroe, G. P. Watson, P. J. Silvėrman	1994	29
12	The vertical replacement-gate (VRG) MOSFET Solid-State Electronics ·J. M. Hergenrother, Sang‐Hyun Oh, T. Nigam, D. Monroe, F. Klemens, A. Kornblit	2002	26
13	Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing G. D. Wilk, M.L. Green, M.-Y. Ho, B. Busch, T. Sorsch, F. Klemens, Bert Brijs, R. B. van Dover, A. Kornblit, T. Gustafsson, Eric Garfunkel, S.J. Hillenius, D. Monroe, Pranav Kalavade, J. M. Hergenrother	2003	19
14	Photonic integrated receiver for 40 Gbit/s transmission Electronics Letters ·B. Mason, S. Chandrasekhar, A. Ougazzaden, C.W. Lentz, J. Geary, L. L. Buhl, L. J. Peticolas, K.G. Glogovsky, J. M. Freund, L.D. Reynolds, G. Przybylek, F.S. Walters, A. A. Sirenko, John Boardman, T.L. Kercher, M.T. Rader, J. A. Grenko, D. Monroe, L.J.P. Ketelsen	2002	19
15	Explanation of soft and hard breakdown and its consequences for area scaling Md Ashraful Alam, B. E. Weir, J. Bude, P. J. Silvėrman, D. Monroe	2003	18
16	Boron pileup and clustering in silicon-on-insulator films Applied Physics Letters ·H.-H. Vuong, H.-J. Gossmann, Lourdes Pelaz, G. K. Celler, D. C. Jacobson, D. Barr, J. M. Hergenrother, D. Monroe, V. C. Venezia, C.S. Rafferty, S.J. Hillenius, Jennifer McKinley, F. A. Stevie, C. N. Granger	1999	17
17	Gate oxides in 50 nm devices: thickness uniformity improves projected reliability B. E. Weir, P. J. Silvėrman, Muhammad A. Alam, F.H. Baumann, D. Monroe, A. Ghetti, J. Bude, G. Timp, Abdullah Hamad, T.M. Oberdick, Ni Zhao, Y. Ma, M.M. Brown, D. Hwang, T. Sorsch, J. Madic	2003	14
18	Evanescent-mode analysis of short-channel effects in fully depleted SOI and related MOSFETs D. Monroe, J. M. Hergenrother	2002	13
19	An anode hole injection percolation model for oxide breakdown-the "doom's day" scenario revisited Md Ashraful Alam, J. Bude, B. E. Weir, P. J. Silvėrman, A. Ghetti, D. Monroe, Kin P. Cheung, S. Moccio	2003	12
20	DENSITY OF STATES IN THE GAP OF a-As₂Se₃BY PHOTOCURRENT TRANSIENT SPECTROSCOPY Le Journal de Physique Colloques ·D. Monroe, J. Orenstein, M. A. Kastner	1981	12

About D. Monroe

D. Monroe is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Condensed Matter Physics, having authored 39 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Electronic and Structural Properties of Oxides (6 papers), Photonic and Optical Devices (5 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Silicon Nanostructures and Photoluminescence (4 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Atomic and Molecular Physics, and Optics (585 citations), Ceramics and Composites (37 citations), Materials Chemistry (264 citations) and Biomedical Engineering (201 citations). D. Monroe has collaborated with scholars based in United States, Germany and Norway. Frequent co-authors include J. M. Hergenrother, P. J. Silvėrman, B. E. Weir, Sang‐Hyun Oh, P. J. Lemaire, T. Erdoğan, V. Mizrahi, Eugene A. Fitzgerald, Ya‐Hong Xie and J. M. Kuo. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, Semiconductor Science and Technology and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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