D. J. Eaglesham

12.0k citations

177 papers · 10.2k · 4 hit papers · h-index 48

Impact in

Atomic and Molecular Physics, and Optics top 0.2%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 0.2%
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies

Papers in

Electrical and Electronic Engineering 140
- Silicon and Solar Cell Technologies 92
- Semiconductor materials and devices 54
- Integrated Circuits and Semiconductor Failure Analysis 47
- Thin-Film Transistor Technologies 27
Atomic and Molecular Physics, and Optics 85
- Semiconductor materials and interfaces 66
- Surface and Thin Film Phenomena 15

Co-authors: M. Cerullo (8 shared papers)J. M. Poate (53 shared papers)D. C. Jacobson (48 shared papers)H.‐J. Gossmann (26 shared papers)P.A. Stolk (17 shared papers)T. E. Haynes (22 shared papers)H.-J. Gossmann (11 shared papers)J. L. Benton (23 shared papers)
Journals: Applied Physics Letters (41 papers)Journal of Applied Physics (21 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (6 papers)Physical Review Letters (6 papers)Ultramicroscopy (5 papers)
Partner nations: United States United Kingdom Germany

In The Last Decade

D. J. Eaglesham

170 papers receiving 9.7k citations

D. J. Eaglesham's Hit Papers

align trajectories log scale

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 · 521 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1997 Journal of Applied Physics
1994 Applied Physics Letters
1993 Physical Review Letters
1990 Physical Review Letters

Peers

Countries citing papers authored by D. J. Eaglesham

Since Specialization

Citations

This map shows the geographic impact of D. J. Eaglesham's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. J. Eaglesham with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. J. Eaglesham more than expected).

Fields of papers citing papers by D. J. Eaglesham

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. J. Eaglesham. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. J. Eaglesham. The network helps show where D. J. Eaglesham may publish in the future.

Co-authors

The 25 scholars most cited alongside D. J. Eaglesham, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. J. Eaglesham Line = papers co-authored together D. J. Eaglesham links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 177 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Dislocation-free Stranski-Krastanow growth of Ge on Si(100) Physical Review Letters ·D. J. Eaglesham, M. Cerullo Hit paper breakdown →	1990	1710
2	Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon Journal of Applied Physics ·P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C.S. Rafferty, George H. Gilmer, M. Jaraı́z, J. M. Poate, H. S. Luftman, T. E. Haynes Hit paper breakdown →	1997	521
3	Equilibrium shape of Si Physical Review Letters ·D. J. Eaglesham, Alice E. White, L. C. Feldman, N. Moriya, D. C. Jacobson Hit paper breakdown →	1993	464
4	Implantation and transient B diffusion in Si: The source of the interstitials Applied Physics Letters ·D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann, J. M. Poate Hit paper breakdown →	1994	450
5	Structural relaxation and defect annihilation in pure amorphous silicon Physical review. B, Condensed matter ·S. Roorda, W.C. Sinke, J. M. Poate, D. C. Jacobson, S. B. Dierker, B. S. Dennis, D. J. Eaglesham, F. Spaepen, P. H. Fuoss	1991	363
6	Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon Journal of Applied Physics ·Jürgen Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, Eugene A. Fitzgerald, Ya‐Hong Xie, J. M. Poate, Lionel C. Kimerling	1991	354
7	Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100) Physical Review Letters ·D. J. Eaglesham, H.‐J. Gossmann, M. Cerullo	1990	284
8	On the mechanism of the hydrogen-induced exfoliation of silicon Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. K. Weldon, Vittorio Marsico, Yves J. Chabal, Aditya Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Yves Caudano, S. B. Christman, E. E. Chaban	1997	277
9	Ion beams in silicon processing and characterization Journal of Applied Physics ·Eric Chason, S. T. Picraux, J. M. Poate, John Borland, Michael Current, T. Dı́az de la Rubia, D. J. Eaglesham, O. W. Holland, Mark E. Law, C. W. Magee, J. W. Mayer, J. Melngailis, A.F. Tasch	1997	231
10	Local structure of 1.54-μm-luminescence Er3+ implanted in Si Applied Physics Letters ·David Adler, D. C. Jacobson, D. J. Eaglesham, Matthew A. Marcus, J. L. Benton, J. M. Poate, P. H. Citrin	1992	225
11	Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation Physical Review Letters ·D. J. Eaglesham, F. C. Unterwald, D. C. Jacobson	1993	198
12	B diffusion and clustering in ion implanted Si: The role of B cluster precursors Applied Physics Letters ·Lourdes Pelaz, M. Jaraı́z, George H. Gilmer, H.-J. Gossmann, C.S. Rafferty, D. J. Eaglesham, J. M. Poate	1997	189
13	Semiconductor molecular-beam epitaxy at low temperatures Journal of Applied Physics ·D. J. Eaglesham	1995	173
14	Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion Applied Physics Letters ·P.A. Stolk, D. J. Eaglesham, H.‐J. Gossmann, J. M. Poate	1995	172
15	Optical doping of waveguide materials by MeV Er implantation Journal of Applied Physics ·Albert Polman, D. C. Jacobson, D. J. Eaglesham, R. C. Kistler, J. M. Poate	1991	158
16	Fabrication of a Carbon Nanotube-Embedded Silicon Nitride Membrane for Studies of Nanometer-Scale Mass Transport Nano Letters ·Jason K. Holt, Aleksandr Noy, Thomas Huser, D. J. Eaglesham, Olgica Bakajin	2004	144
17	Dislocation nucleation near the critical thickness in GeSi/Si strained layers Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·D. J. Eaglesham, E. P. Kvam, D. M. Maher, C. J. Humphreys, J. C. Bean	1989	135
18	Microstructure of erbium-implanted Si Applied Physics Letters ·D. J. Eaglesham, Jürgen Michel, Eugene A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L. Benton, Albert Polman, Y. H. Xie, Lionel C. Kimerling	1991	134
19	Simulation of cluster evaporation and transient enhanced diffusion in silicon Applied Physics Letters ·C.S. Rafferty, George H. Gilmer, M. Jaraı́z, D. J. Eaglesham, H.‐J. Gossmann	1996	125
20	Evolution from point to extended defects in ion implanted silicon Journal of Applied Physics ·J. L. Benton, Sebania Libertino, P. Kringho j, D. J. Eaglesham, J. M. Poate, S. Coffa	1997	121

About D. J. Eaglesham

D. J. Eaglesham is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Materials Chemistry and Condensed Matter Physics, having authored 177 papers that have together received 10.2k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (92 papers), Semiconductor materials and interfaces (66 papers), Semiconductor materials and devices (54 papers), Integrated Circuits and Semiconductor Failure Analysis (47 papers), Ion-surface interactions and analysis (33 papers), Thin-Film Transistor Technologies (27 papers), Silicon Nanostructures and Photoluminescence (20 papers) and Surface and Thin Film Phenomena (15 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (4.9k citations), Electrical and Electronic Engineering (7.7k citations), Structural Biology (159 citations), Computational Mechanics (1.9k citations) and Materials Chemistry (3.8k citations). D. J. Eaglesham has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include M. Cerullo, J. M. Poate, D. C. Jacobson, H.‐J. Gossmann, P.A. Stolk, T. E. Haynes, H.-J. Gossmann, J. L. Benton, Aditya Agarwal and George H. Gilmer. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Physical Review Letters and Ultramicroscopy.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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D. J. Eaglesham's Hit Papers

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