C. Lanzieri

2.3k citations

135 papers · 1.9k · h-index 25

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Nuclear Energy and Engineering top 2%

Papers in

Electrical and Electronic Engineering 125
- Silicon Carbide Semiconductor Technologies 50
- Radio Frequency Integrated Circuit Design 43
- Semiconductor materials and devices 40
- Advancements in Semiconductor Devices and Circuit Design 27
- Advanced Semiconductor Detectors and Materials 15
Condensed Matter Physics 60
- GaN-based semiconductor devices and materials 59

Co-authors: F. Nava (24 shared papers)A. Cetronio (42 shared papers)P. Vanni (14 shared papers)C. Canali (35 shared papers)G. Bertuccio (14 shared papers)Enrico Zanoni (19 shared papers)M. Peroni (35 shared papers)E. Vittone (5 shared papers)
Journals: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (15 papers)IEEE Transactions on Electron Devices (9 papers)IEEE Transactions on Nuclear Science (6 papers)Microelectronics Reliability (6 papers)Applied Surface Science (3 papers)
Partner nations: Italy France Switzerland

In The Last Decade

C. Lanzieri

131 papers receiving 1.8k citations

Peers

Countries citing papers authored by C. Lanzieri

Since Specialization

Citations

This map shows the geographic impact of C. Lanzieri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Lanzieri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Lanzieri more than expected).

Fields of papers citing papers by C. Lanzieri

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Lanzieri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Lanzieri. The network helps show where C. Lanzieri may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Lanzieri, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Lanzieri Line = papers co-authored together C. Lanzieri links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 135 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements IEEE Transactions on Electron Devices ·Matteo Meneghini, Isabella Rossetto, Davide Bisi, Antonio Stocco, Alessandro Chini, A. Pantellini, C. Lanzieri, A. Nanni, Gaudenzio Meneghesso, Enrico Zanoni	2014	149
2	Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·F. Nava, E. Vittone, P. Vanni, G. Verzellesi, P.G. Fuochi, C. Lanzieri, M. Gläser	2003	106
3	Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing IEEE Electron Device Letters ·Enrico Zanoni, Francesca Danesin, Matteo Meneghini, A. Cetronio, C. Lanzieri, M. Peroni, Gaudenzio Meneghesso	2009	78
4	Minimum Ionizing and Alpha Particles Detectors Based on Epitaxial Semiconductor Silicon Carbide IEEE Transactions on Nuclear Science ·F. Nava, P. Vanni, M. Bruzzi, S. Lagomarsino, S. Sciortino, G. Wagner, C. Lanzieri	2004	71
5	Silicon carbide for high resolution X-ray detectors operating up to 100°C Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·G. Bertuccio, R. Casiraghi, A. Cetronio, C. Lanzieri, F. Nava	2004	67
6	Epitaxial silicon carbide charge particle detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·F. Nava, P. Vanni, C. Lanzieri, C. Canali	1999	64
7	Performance of a new ohmic contact for GaAs particle detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·M. Alietti, C. Canali, A. Castaldini, A. Cavallini, A. Cetronio, C. Chiossi, S. D’Auria, C. Del Papa, C. Lanzieri, F. Nava, P. Vanni	1995	54
8	Silicon carbide detector for laser-generated plasma radiation Applied Surface Science ·G. Bertuccio, Donatella Puglisi, L. Torrisi, C. Lanzieri	2012	52
9	Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·S. Sciortino, F. Hartjes, S. Lagomarsino, F. Nava, M. Brianzi, V. Cindro, C. Lanzieri, M. Moll, P. Vanni	2005	50
10	Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·F. Nava, G. Wagner, C. Lanzieri, P. Vanni, E. Vittone	2003	47
11	Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design IEEE Electron Device Letters ·Davide Bisi, Alessandro Chini, F. Soci, Antonio Stocco, Matteo Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, M.A. diForte-Poisson, Gaudenzio Meneghesso, Enrico Zanoni	2015	44
12	A new generation of X-ray detectors based on silicon carbide Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·G. Bertuccio, R. Casiraghi, A. Cetronio, C. Lanzieri, F. Nava	2003	44
13	SiC detectors for neutron monitoring Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·C. Manfredotti, Alessandro Lo Giudice, F. Fasolo, E. Vittone, C. Paolini, F. Fizzotti, A. Zanini, G. Wagner, C. Lanzieri	2005	42
14	Dependence of ionization current on gate bias in GaAs MESFETs IEEE Transactions on Electron Devices ·C. Canali, A. Neviani, C. Tedesco, Enrico Zanoni, A. Centronio, C. Lanzieri	1993	41
15	Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·F. Nava, E. Vittone, P. Vanni, P.G. Fuochi, C. Lanzieri	2003	40
16	Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown IEEE Transactions on Electron Devices ·D. Dieci, Giovanna Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, C. Canali	2001	39
17	Deep levels in silicon carbide Schottky diodes Applied Surface Science ·A. Castaldini, A. Cavallini, L. Polenta, F. Nava, C. Canali, C. Lanzieri	2002	35
18	Hot electron effects on Al/sub 0.25/Ga/sub 0.75/As/GaAs power HFET's under off-state and on-state electrical stress conditions IEEE Transactions on Electron Devices ·D. Dieci, R. Menozzi, C. Lanzieri, L. Polenta, C. Canali	2000	33
19	Possibility of Subelectron Noise With Room-Temperature Silicon Carbide Pixel Detectors IEEE Transactions on Nuclear Science ·G. Bertuccio, S. Caccia, R. Casiraghi, C. Lanzieri	2006	30
20	Experimental validation of GaN HEMTs thermal management by using photocurrent measurements IEEE Transactions on Electron Devices ·P. Regoliosi, Andrea Reale, Aldo Di Carlo, P. Romanini, M. Peroni, C. Lanzieri, Angelo Angelini, Marco Pirola, Giovanni Ghione	2006	30

About C. Lanzieri

C. Lanzieri is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Nuclear and High Energy Physics and Biomedical Engineering, having authored 135 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (59 papers), Silicon Carbide Semiconductor Technologies (50 papers), Radio Frequency Integrated Circuit Design (43 papers), Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor Quantum Structures and Devices (25 papers), Advanced Semiconductor Detectors and Materials (15 papers) and Particle Detector Development and Performance (15 papers). The work is most often cited by research in Condensed Matter Physics (685 citations), Nuclear Energy and Engineering (21 citations), Electrical and Electronic Engineering (1.7k citations), Nuclear and High Energy Physics (245 citations) and Radiation (156 citations). C. Lanzieri has collaborated with scholars based in Italy, France and Switzerland. Frequent co-authors include F. Nava, A. Cetronio, P. Vanni, C. Canali, G. Bertuccio, Enrico Zanoni, M. Peroni, E. Vittone, Gaudenzio Meneghesso and A. Pantellini. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Microelectronics Reliability and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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