Lingyan Shen

706 citations
42 papers · 480 · h-index 13

Impact in

Papers in

    • Semiconductor materials and devices 27
    • Silicon Carbide Semiconductor Technologies 8
    • Ferroelectric and Negative Capacitance Devices 6
    • Advancements in Semiconductor Devices and Circuit Design 5
    • GaN-based semiconductor devices and materials 17

Lingyan Shen

40 papers receiving 476 citations

Peers

Lingyan Shen
Comparison fields: 5 of 34
  • Condensed Matter Physics 197
  • Electronic, Optical and Magnetic Materials 145
  • Electrical and Electronic Engineering 328
  • Materials Chemistry 216
  • Renewable Energy, Sustainability and the Environment 35
Replace D. Y. Kim with:
D. Y. Kim South Korea
Virginia R. Anderson United States
Ersin Yücel Türkiye
Bernat Bozzo Spain
Kean Pah Lim Malaysia
Lorenzo Caccamo Germany
Yurong Yang China
V. Mihalache Romania
M. Rekaby Egypt
Jiangshan Zheng China
Lingyan Shen relative to D. Y. Kim South Korea D. Y. Kim's profile →
Citations per field
00.5×6.4×
D. Y. Kim · 1×
Citations per year

Countries citing papers authored by Lingyan Shen

Since Specialization
Citations

This map shows the geographic impact of Lingyan Shen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lingyan Shen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lingyan Shen more than expected).

Fields of papers citing papers by Lingyan Shen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lingyan Shen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lingyan Shen. The network helps show where Lingyan Shen may publish in the future.

Co-authors

The 25 scholars most cited alongside Lingyan Shen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Lingyan Shen Line = papers co-authored together Lingyan Shen links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#Work
1 200373
2 201737
3 201632
4 201526
5 201823
6 201521
7 201721
8 201315
9 201815
10 201814
11 201714
12 201713
13 201412
14 201712
15 201411
16 201511
17 201711
18 201411
19 201610
20 201410

About Lingyan Shen

Lingyan Shen is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 42 papers that have together received 480 indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), GaN-based semiconductor devices and materials (17 papers), Graphene research and applications (11 papers), Ga2O3 and related materials (10 papers), Silicon Carbide Semiconductor Technologies (8 papers), Ferroelectric and Negative Capacitance Devices (6 papers), ZnO doping and properties (5 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Condensed Matter Physics (197 citations), Electronic, Optical and Magnetic Materials (145 citations), Electrical and Electronic Engineering (328 citations), Materials Chemistry (216 citations) and Renewable Energy, Sustainability and the Environment (35 citations). Lingyan Shen has collaborated with scholars based in China, United States and Germany. Frequent co-authors include Yuehui Yu, Li Zheng, Xinhong Cheng, Duo Cao, Qian Wang, Xinhong Cheng, Zhongjian Wang, Chao Xia, Jingjie Li and Xiaowen Liu. Their work appears in journals such as RSC Advances, Applied Surface Science, Superlattices and Microstructures, IEEE Transactions on Electron Devices and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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