Dan Denninghoff

951 citations

20 papers · 810 · h-index 10

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering
- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies

Papers in

Condensed Matter Physics 16
- GaN-based semiconductor devices and materials 16
Electrical and Electronic Engineering 6
- Radio Frequency Integrated Circuit Design 4
- Advanced Power Amplifier Design 1
- Advanced MEMS and NEMS Technologies 1

Co-authors: Umesh Kumar Mishra (8 shared papers)S. Keller (8 shared papers)Jing Lu (7 shared papers)Derrick Langley (1 shared paper)J. Gillespie (1 shared paper)Antonio Crespo (1 shared paper)Gregg H. Jessen (1 shared paper)Manuel Trejo (1 shared paper)
Journals: Applied Physics Letters (2 papers)IEEE Journal of Solid-State Circuits (1 paper)IEEE Electron Device Letters (1 paper)Semiconductor Science and Technology (1 paper)IEEE Transactions on Electron Devices (1 paper)
Partner nations: United States Japan Italy

In The Last Decade

Dan Denninghoff

19 papers receiving 791 citations

Peers

Countries citing papers authored by Dan Denninghoff

Since Specialization

Citations

This map shows the geographic impact of Dan Denninghoff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dan Denninghoff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dan Denninghoff more than expected).

Fields of papers citing papers by Dan Denninghoff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dan Denninghoff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dan Denninghoff. The network helps show where Dan Denninghoff may publish in the future.

Co-authors

The 25 scholars most cited alongside Dan Denninghoff, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Dan Denninghoff Line = papers co-authored together Dan Denninghoff links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices IEEE Transactions on Electron Devices ·Gregg H. Jessen, Robert Fitch, J. Gillespie, Glen David Via, Antonio Crespo, Derrick Langley, Dan Denninghoff, Manuel Trejo	2007	288
2	N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology ·Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi, Dan Denninghoff, Seshadri K. Kolluri, David F. Brown, Jing Lu, Nicholas A. Fichtenbaum	2013	204
3	A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch $0.15~ {\mu }\text{m}$ GaN-SiC Wafer Process Technology IEEE Journal of Solid-State Circuits ·Kevin W. Kobayashi, Dan Denninghoff, Dain Miller	2016	69
4	Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$ IEEE Electron Device Letters ·Dan Denninghoff, Sansaptak Dasgupta, Jing Lu, S. Keller, Umesh Kumar Mishra	2012	55
5	Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors Applied Physics Letters ·Jing Lu, Xun Zheng, Matthew Guidry, Dan Denninghoff, Elahe Ahmadi, Shalini Lal, S. Keller, Steven P. DenBaars	2014	35
6	N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax Conference digest ·Dan Denninghoff, Jing Lu, Matthew A. Laurent, Elaheh Ahmadi, S. Keller, Umesh Kumar Mishra	2012	32
7	N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax Conference digest ·Dan Denninghoff, Jing Lu, Elaheh Ahmadi, S. Keller, Umesh Kumar Mishra	2013	27
8	Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters ·Jing Lu, Dan Denninghoff, Ramya Yeluri, Shalini Lal, Geetak Gupta, Matthew A. Laurent, S. Keller, Steven P. DenBaars	2013	24
9	A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications IEEE Journal of Microwaves ·Nicholas C. Miller, Andrea Arias-Purdue, Fevzi Erdem Arkun, David F. Brown, James F. Buckwalter, Robert L. Coffie, Andrea L. Corrion, Dan Denninghoff	2023	20
10	Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition Applied Physics Express ·Ramya Yeluri, Dan Denninghoff, Jing Lu, S. Keller, James S. Speck, Steven P. DenBaars, Umesh Kumar Mishra +1 other	2011	18
11	A Novel 100 MHz-45 GHz GaN HEMT Low Noise Non-Gate-Terminated Distributed Amplifier Based on a 6-Inch 0.15µm GaN-SiC mm-Wave Process Technology IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ·Kevin W. Kobayashi, Dan Denninghoff, Dain Miller	2015	7
12	Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment ARFTG Microwave Measurement Conference ·Nicholas C. Miller, Ryan Gilbert, Fevzi Erdem Arkun, Dan Denninghoff +1 other	2022	6
13	Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ·David M. Fanning, Andrea L. Corrion, Georges Siddiqi, Souheil Nadri, Dan Denninghoff, Fevzi Erdem Arkun, Sadaf Dadafshar, Ignacio Ramos	2023	6
14	W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz Conference digest ·Fevzi Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Ryan Gilbert, I. Milosavljevic, Georges Siddiqi	2023	6
15	Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ·Dan Denninghoff, Fevzi Erdem Arkun, Jeong‐Sun Moon, Andrea L. Corrion, Georges Siddiqi, David M. Fanning, Micha N. Fireman, Joe Tai	2023	5
16	N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design Conference digest ·Dan Denninghoff, Sandeepan DasGupta, David F. Brown, S. Keller, James S. Speck, Umesh Kumar Mishra	2011	3
17	Autonomous power-scavenging MEMS robots Dan Denninghoff, LaVern A. Starman, Paul E. Kladitis, CD Perry	2005	2
18	Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs IEEE MTT-S International Microwave Symposium digest ·Jonathan Roderick, Dan Denninghoff, Daniel Berkoh, Joe Tai, Sunil G. Rao, Jonathan J. Lynch, T. Clayton, Hasan Sharifi	2024	2
19	Investigating Thermal Effects and Mitigation Strategies in Multi-Finger GaN HEMTs Amirreza Ghadimi Avval, Soheil Nouri, Dan Denninghoff, Ali M. Darwish, Samir El‐Ghazaly	2024	1
20	Low-Noise and High-Survivability 55–65-GHz GaN MMIC LNA for Millimeter-Wave Communications IEEE Microwave and Wireless Technology Letters ·Tamra Yatkin, Andrew Fong, Andrea Arias-Purdue, Fevzi Erdem Arkun, Satyaki Ganguly, Dan Denninghoff +3 others	2025	0

About Dan Denninghoff

Dan Denninghoff is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Nuclear Energy and Engineering, Waste Management and Disposal and Infectious Diseases, having authored 20 papers that have together received 810 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (16 papers), Radio Frequency Integrated Circuit Design (4 papers), Advanced Power Amplifier Design (1 paper) and Advanced MEMS and NEMS Technologies (1 paper). The work is most often cited by research in Condensed Matter Physics (671 citations), Electrical and Electronic Engineering (159 citations), Electronic, Optical and Magnetic Materials (10 citations), Atomic and Molecular Physics, and Optics (16 citations) and Materials Chemistry (17 citations). Dan Denninghoff has collaborated with scholars based in United States, Japan and Italy. Frequent co-authors include Umesh Kumar Mishra, S. Keller, Jing Lu, Derrick Langley, J. Gillespie, Antonio Crespo, Gregg H. Jessen, Manuel Trejo, Robert Fitch and Eric R. Heller. Their work appears in journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits, IEEE Electron Device Letters, Semiconductor Science and Technology and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Dan Denninghoff

Impact in

Papers in i

In The Last Decade

Dan Denninghoff

Peers

Countries citing papers authored by Dan Denninghoff

Fields of papers citing papers by Dan Denninghoff

All Works

About Dan Denninghoff

Explore authors with similar magnitude of impact

Papers in