M.B. Das

1.2k citations

65 papers · 861 · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 64
- Advancements in Semiconductor Devices and Circuit Design 40
- Semiconductor materials and devices 34
- Radio Frequency Integrated Circuit Design 22
- Silicon Carbide Semiconductor Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 8
- Silicon and Solar Cell Technologies 7
Atomic and Molecular Physics, and Optics 27
- Semiconductor Quantum Structures and Devices 14
- Semiconductor materials and interfaces 9

Co-authors: W. Kopp (5 shared papers)H. Morkoç̌ (5 shared papers)Arthur Boothroyd (4 shared papers)Eugene John (4 shared papers)P. Bendix (1 shared paper)S. Chaudhuri (2 shared papers)S. Sriram (2 shared papers)Vikas Arora (2 shared papers)
Journals: IEEE Transactions on Electron Devices (26 papers)IEEE Electron Device Letters (10 papers)Solid-State Electronics (5 papers)Electronics Letters (2 papers)Nature Communications (1 paper)
Partner nations: United States United Kingdom South Korea

In The Last Decade

M.B. Das

61 papers receiving 809 citations

Peers

Countries citing papers authored by M.B. Das

Since Specialization

Citations

This map shows the geographic impact of M.B. Das's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.B. Das with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.B. Das more than expected).

Fields of papers citing papers by M.B. Das

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.B. Das. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.B. Das. The network helps show where M.B. Das may publish in the future.

Co-authors

The 25 scholars most cited alongside M.B. Das, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.B. Das Line = papers co-authored together M.B. Das links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 65 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A high aspect ratio design approach to millimeter-wave HEMT structures IEEE Transactions on Electron Devices ·M.B. Das	1985	59
2	High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors IEEE Transactions on Electron Devices ·M.B. Das	1988	55
3	Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's IEEE Transactions on Electron Devices ·R.J. Sung, P. Bendix, M.B. Das	1998	45
4	Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures IEEE Transactions on Electron Devices ·M.B. Das	1987	40
5	Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10^-2to 10⁸Hz IEEE Transactions on Electron Devices ·S.-M.J. Liu, M.B. Das, Chin-Kun Peng, John F. Klem, T. Henderson, W. Kopp, H. Morkoç̌	1986	35
6	Determination of physical parameters of diffusion and drift transistors IRE Transactions on Electron Devices ·M.B. Das, Arthur Boothroyd	1961	30
7	Noise behavior of 1-µm gate-length modulation-doped FET's from 10^-2to 10⁸Hz IEEE Electron Device Letters ·Songjing Liu, M.B. Das, W. Kopp, H. Morkoç̌	1985	29
8	Physical limitations of MOS structures Solid-State Electronics ·M.B. Das	1969	29
9	High-frequency network properties of MOS transistors including the substrate resistivity effects IEEE Transactions on Electron Devices ·M.B. Das	1969	27
10	Measurements and interpretation of low-frequency noise in FET's IEEE Transactions on Electron Devices ·M.B. Das, J.M. Moore	1974	26
11	Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors IEEE Transactions on Electron Devices ·A.K. Kirtania, M.B. Das, S. Chandrasekhar, L.M. Lunardi, G.J. Qua, R. A. Hamm, Li-Wu Yang	1996	25
12	Determination of carrier saturation velocity in short-gate-length modulation-doped FET'S IEEE Electron Device Letters ·M.B. Das, W. Kopp, H. Morkoç̌	1984	24
13	Optimization of gate-to-drain separation in submicron gate-length modulation doped FET's for maximum power gain performance IEEE Transactions on Electron Devices ·Jau-Wen Chen, M. Thurairaj, M.B. Das	1994	21
14	Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures Nature Communications ·Dipanjan Sen, Harikrishnan Ravichandran, M.B. Das, Pranavram Venkatram, Sooho Choo, Shivasheesh Varshney, Zhiyu Zhang, Yongwen Sun, Jay Shah, Shiva Subbulakshmi Radhakrishnan, Akash Saha, Sankalpa Hazra, Chen Chen, Joan M. Redwing, K. Andre Mkhoyan, Venkatraman Gopalan, Yang Yang, Bharat Jalan, Saptarshi Das	2024	20
15	Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substrates IEEE Transactions on Electron Devices ·S. Sriram, M.B. Das	1983	20
16	On the current dependence of low-frequency noise in bipolar transistors IEEE Transactions on Electron Devices ·M.B. Das	1975	20
17	FET noise sources and their effects on amplifier performance at low frequencies IEEE Transactions on Electron Devices ·M.B. Das	1972	19
18	Designing optoelectronic integrated circuit (OEIC) receivers for high sensitivity and maximally flat frequency response Journal of Lightwave Technology ·M.B. Das, Jau-Wen Chen, Eugene John	1995	19
19	On the determination of source and drain series resistances of MESFET's IEEE Electron Device Letters ·S. Chaudhuri, M.B. Das	1984	18
20	Low-frequency noise behavior of 0.15- mu m gate-length lattice-matched and lattice-mismatched MODFETs on InP substrates IEEE Electron Device Letters ·M. Thurairaj, M.B. Das, J. M. Ballingall, P. Ho, P.C. Chao, Ming-Yih Kao	1991	17

About M.B. Das

M.B. Das is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics and Materials Chemistry, having authored 65 papers that have together received 861 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (40 papers), Semiconductor materials and devices (34 papers), Radio Frequency Integrated Circuit Design (22 papers), Semiconductor Quantum Structures and Devices (14 papers), Silicon Carbide Semiconductor Technologies (11 papers), Semiconductor materials and interfaces (9 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and Silicon and Solar Cell Technologies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (810 citations), Atomic and Molecular Physics, and Optics (387 citations), Condensed Matter Physics (84 citations), Biomedical Engineering (89 citations) and Instrumentation (5 citations). M.B. Das has collaborated with scholars based in United States, United Kingdom and South Korea. Frequent co-authors include W. Kopp, H. Morkoç̌, Arthur Boothroyd, Eugene John, P. Bendix, S. Chaudhuri, S. Sriram, Vikas Arora, Pierre Schmidt and Prasanta Ghosh. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Solid-State Electronics, Electronics Letters and Nature Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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