P. Ho

1.8k citations

70 papers · 1.2k · h-index 17

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Microwave Engineering and Waveguides

Papers in

Electrical and Electronic Engineering 49
- Radio Frequency Integrated Circuit Design 33
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 9
- Advanced Power Amplifier Design 6
- Semiconductor Lasers and Optical Devices 6
Atomic and Molecular Physics, and Optics 35
- Semiconductor Quantum Structures and Devices 33

Co-authors: P.C. Chao (31 shared papers)K.H.G. Duh (23 shared papers)J. M. Ballingall (29 shared papers)P.M. Smith (27 shared papers)Ming-Yih Kao (18 shared papers)A.A. Jabra (11 shared papers)A.J. Tessmer (5 shared papers)L. F. Lester (8 shared papers)
Journals: Electronics Letters (7 papers)IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (3 papers)Journal of Electronic Materials (3 papers)Applied Physics Letters (2 papers)
Partner nations: United States Taiwan India

In The Last Decade

P. Ho

63 papers receiving 1.1k citations

Peers

Countries citing papers authored by P. Ho

Since Specialization

Citations

This map shows the geographic impact of P. Ho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Ho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Ho more than expected).

Fields of papers citing papers by P. Ho

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Ho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Ho. The network helps show where P. Ho may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Ho, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Ho Line = papers co-authored together P. Ho links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 70 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	W-band low-noise InAlAs/InGaAs lattice-matched HEMTs IEEE Electron Device Letters ·P.C. Chao, A.J. Tessmer, K.H.G. Duh, P. Ho, Ming-Yih Kao, P.M. Smith, J. M. Ballingall, S.-M.J. Liu, A.A. Jabra	1990	153
2	W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/ IEEE Microwave and Guided Wave Letters ·P.M. Smith, Shikuan Liu, Ming-Yih Kao, P. Ho, S.C. Wang, K.H.G. Duh, S.T. Fu, P.C. Chao	1995	128
3	A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT IEEE Microwave and Guided Wave Letters ·K.H.G. Duh, P.C. Chao, S.M.J. Liu, P. Ho, Ming-Yih Kao, J. M. Ballingall	1991	113
4	DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs IEEE Transactions on Electron Devices ·P.C. Chao, M. S. Shur, R. C. Tiberio, K.H.G. Duh, P.M. Smith, J. M. Ballingall, P. Ho, A.A. Jabra	1989	103
5	Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs Electronics Letters ·P. Ho, Ming-Yih Kao, P.C. Chao, K.H.G. Duh, J. M. Ballingall, Scott T. Allen, A.J. Tessmer, P.M. Smith	1991	82
6	Ultra-low-noise cryogenic high-electron-mobility transistors IEEE Transactions on Electron Devices ·K.H.G. Duh, M.W. Pospieszalski, W. Kopp, P. Ho, A.A. Jabra, P.C. Chao, P.M. Smith, L. F. Lester, J. M. Ballingall, S. Weinreb	1988	66
7	Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs IEEE Electron Device Letters ·Ming-Yih Kao, P.M. Smith, P. Ho, P.C. Chao, K.H.G. Duh, A.A. Jabra, J. M. Ballingall	1989	55
8	W-band InGaAs HEMT low noise amplifiers K.H.G. Duh, P.C. Chao, P. Ho, A.J. Tessmer, S.M.J. Liu, Ming-Yih Kao, P.M. Smith, J. M. Ballingall	1990	55
9	A voltage-tunable multicolor triple-coupled InGaAs/GaAs/AlGaAs quantum-well infrared photodetector for 8–12 μm detection Applied Physics Letters ·Jung-Chi Chiang, Sheng S. Li, Meimei Z. Tidrow, P. Ho, Ming‐Fa Tsai, C. P. Lee	1996	50
10	Long Term Pulsatile Growth Hormone (GH)-Releasing Hormone Therapy in Children With GH Deficiency* The Journal of Clinical Endocrinology & Metabolism ·L.C.K. Low, C. Wang, P. T. Cheung, P. Ho, Karen S.L. Lam, R. T. T. YOUNG, CK Yeung, Nicholas Ling	1988	27
11	Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs IEEE Photonics Technology Letters ·L. F. Lester, K. C. Hwang, P. Ho, John Mazurowski, J. M. Ballingall, J. A. Sutliff, Sandeep K. Gupta, J.F. Whitaker, S. Williamson	1993	27
12	Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers Applied Physics Letters ·J. M. Ballingall, P. Ho, G. J. Tessmer, Paul Martin, Nathan S. Lewis, Ernest L. Hall	1989	25
13	32-GHz cryogenically cooled HEMT low-noise amplifiers IEEE Transactions on Electron Devices ·K.H.G. Duh, W. Kopp, P. Ho, P.C. Chao, Min-Woo Ko, P.M. Smith, J. M. Ballingall, J. J. Bautista, G.G. Ortiz	1989	23
14	Microwave InAlAs/InGaAs/InP HEMTs: status and applications P.M. Smith, P.C. Chao, P. Ho, K.H.G. Duh, Ming-Yih Kao, J. M. Ballingall, Scott T. Allen, A.J. Tessmer	1990	22
15	Pseudomorphic InGaAs high electron mobility transistors Thin Solid Films ·J. M. Ballingall, Paul Martin, John Mazurowski, P. Ho, P.C. Chao, P.M. Smith, K.H.G. Duh	1993	19
16	A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz IEEE Electron Device Letters ·P.M. Smith, L. F. Lester, P.C. Chao, P. Ho, R.P. Smith, J. M. Ballingall, Ming-Yih Kao	1989	18
17	Low-frequency noise behavior of 0.15- mu m gate-length lattice-matched and lattice-mismatched MODFETs on InP substrates IEEE Electron Device Letters ·M. Thurairaj, M.B. Das, J. M. Ballingall, P. Ho, P.C. Chao, Ming-Yih Kao	1991	17
18	94 GHz low-noise HEMT Electronics Letters ·P.C. Chao, K.H.G. Duh, P. Ho, P.M. Smith, J. M. Ballingall, A.A. Jabra, R. C. Tiberio	1989	15
19	High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy Journal of Electronic Materials ·Sandeep Gupta, J.F. Whitaker, S. Williamson, G. Mourou, L. F. Lester, K. C. Hwang, P. Ho, John Mazurowski, J. M. Ballingall	1993	14
20	Combustion noise prediction update P. Ho, V. L. Doyle	1979	14

About P. Ho

P. Ho is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Aerospace Engineering, Condensed Matter Physics and Biomedical Engineering, having authored 70 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (33 papers), Radio Frequency Integrated Circuit Design (33 papers), Semiconductor materials and devices (16 papers), GaN-based semiconductor devices and materials (10 papers), Satellite Communication Systems (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Advanced Power Amplifier Design (6 papers) and Semiconductor Lasers and Optical Devices (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (771 citations), Electrical and Electronic Engineering (1.1k citations), Condensed Matter Physics (128 citations), Astronomy and Astrophysics (81 citations) and Aerospace Engineering (60 citations). P. Ho has collaborated with scholars based in United States, Taiwan and India. Frequent co-authors include P.C. Chao, K.H.G. Duh, J. M. Ballingall, P.M. Smith, Ming-Yih Kao, A.A. Jabra, A.J. Tessmer, L. F. Lester, R. C. Tiberio and W. Kopp. Their work appears in journals such as Electronics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Electronic Materials and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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