D. E. Aspnes
Impact in
- Atomic and Molecular Physics, and Optics top 0.05%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Spectroscopy and Quantum Chemical Studies
- Surfaces, Coatings and Films top 0.05%
Papers in
-
- Semiconductor Quantum Structures and Devices 125
- Spectroscopy and Quantum Chemical Studies 67
- Semiconductor materials and interfaces 58
-
- Semiconductor materials and devices 89
- Chalcogenide Semiconductor Thin Films 36
- Co-authors
- A. A. Studna (43 shared papers)J. B. Theeten (11 shared papers)L. T. Florez (26 shared papers)J. P. Harbison (25 shared papers)J. D. E. McIntyre (1 shared paper)R. Bhat (22 shared papers)F. Hottier (1 shared paper)S. M. Kelso (13 shared papers)
- Journals
- Applied Physics Letters (50 papers)Physical review. B, Condensed matter (27 papers)Physical Review Letters (27 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (24 papers)Thin Solid Films (24 papers)
- Partner nations
- United StatesSouth KoreaGermany
In The Last Decade
D. E. Aspnes
438 papers receiving 26.1k citations
D. E. Aspnes's Hit Papers
Peers
Comparison fields: 5 of 134
- Atomic and Molecular Physics, and Optics 15.1k
- Surfaces, Coatings and Films 3.2k
- Condensed Matter Physics 3.5k
- Electrical and Electronic Engineering 15.4k
- Materials Chemistry 9.8k
Countries citing papers authored by D. E. Aspnes
This map shows the geographic impact of D. E. Aspnes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. E. Aspnes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. E. Aspnes more than expected).
Fields of papers citing papers by D. E. Aspnes
This network shows the impact of papers produced by D. E. Aspnes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. E. Aspnes. The network helps show where D. E. Aspnes may publish in the future.
Co-authors
The 25 scholars most cited alongside D. E. Aspnes, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 449 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV Hit paper breakdown → | 1983 | 3347 |
| 2 | Optical properties of thin films Hit paper breakdown → | 1982 | 1402 |
| 3 | Static Phenomena Near Critical Points: Theory and Experiment Hit paper breakdown → | 1967 | 1303 |
| 4 | Third-derivative modulation spectroscopy with low-field electroreflectance Hit paper breakdown → | 1973 | 1038 |
| 5 | Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry Hit paper breakdown → | 1979 | 912 |
| 6 | Differential reflection spectroscopy of very thin surface films Hit paper breakdown → | 1971 | 798 |
| 7 | Optical properties of AlxGa1−x As Hit paper breakdown → | 1986 | 724 |
| 8 | Local-field effects and effective-medium theory: A microscopic perspective Hit paper breakdown → | 1982 | 601 |
| 9 | High Precision Scanning Ellipsometer Hit paper breakdown → | 1975 | 567 |
| 10 | Schottky-Barrier Electroreflectance: Application to GaAs Hit paper breakdown → | 1973 | 536 |
| 11 | Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs Hit paper breakdown → | 1988 | 467 |
| 12 | GaAs lower conduction-band minima: Ordering and properties Hit paper breakdown → | 1976 | 401 |
| 13 | 1984 | 391 | |
| 14 | 1985 | 366 | |
| 15 | 1992 | 303 | |
| 16 | 1966 | 297 | |
| 17 | 1984 | 293 | |
| 18 | 1967 | 270 | |
| 19 | 1980 | 268 | |
| 20 | 1975 | 244 |
About D. E. Aspnes
D. E. Aspnes is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering and Computational Mechanics, having authored 449 papers that have together received 28.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (125 papers), Semiconductor materials and devices (89 papers), Spectroscopy and Quantum Chemical Studies (67 papers), Semiconductor materials and interfaces (58 papers), Silicon Nanostructures and Photoluminescence (50 papers), GaN-based semiconductor devices and materials (44 papers), Optical Polarization and Ellipsometry (39 papers) and Chalcogenide Semiconductor Thin Films (36 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (15.1k citations), Surfaces, Coatings and Films (3.2k citations), Condensed Matter Physics (3.5k citations), Electrical and Electronic Engineering (15.4k citations) and Materials Chemistry (9.8k citations). D. E. Aspnes has collaborated with scholars based in United States, South Korea and Germany. Frequent co-authors include A. A. Studna, J. B. Theeten, L. T. Florez, J. P. Harbison, J. D. E. McIntyre, R. Bhat, F. Hottier, S. M. Kelso, J. E. Rowe and Hans Arwin. Their work appears in journals such as Applied Physics Letters, Physical review. B, Condensed matter, Physical Review Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Thin Solid Films.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.