S. E. Hooper

1.0k citations

52 papers · 834 · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices

Papers in

Condensed Matter Physics 44
- GaN-based semiconductor devices and materials 44
Atomic and Molecular Physics, and Optics 42
- Semiconductor Quantum Structures and Devices 41

Co-authors: John Orton (21 shared papers)T.S. Cheng (16 shared papers)D. E. Lacklison (15 shared papers)C. T. Foxon (20 shared papers)L. C. Jenkins (15 shared papers)Jon Heffernan (20 shared papers)C. T. Foxon (3 shared papers)M. Kauer (18 shared papers)
Journals: Journal of Crystal Growth (8 papers)Semiconductor Science and Technology (8 papers)Applied Physics Letters (7 papers)Electronics Letters (4 papers)physica status solidi (a) (3 papers)
Partner nations: United Kingdom Russia United States

In The Last Decade

S. E. Hooper

52 papers receiving 820 citations

Peers

Countries citing papers authored by S. E. Hooper

Since Specialization

Citations

This map shows the geographic impact of S. E. Hooper's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. E. Hooper with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. E. Hooper more than expected).

Fields of papers citing papers by S. E. Hooper

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. E. Hooper. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. E. Hooper. The network helps show where S. E. Hooper may publish in the future.

Co-authors

The 25 scholars most cited alongside S. E. Hooper, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. E. Hooper Line = papers co-authored together S. E. Hooper links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy Applied Physics Letters ·T.S. Cheng, L. C. Jenkins, S. E. Hooper, C. T. Foxon, John Orton, D. E. Lacklison	1995	130
2	The growth and properties of group III nitrides Journal of Crystal Growth ·C. T. Foxon, T.S. Cheng, С. В. Новиков, D. E. Lacklison, L. C. Jenkins, D. Johnston, John Orton, S. E. Hooper, N. Baba-Ali, T.L. Tansley, V.V. Tret'yakov	1995	60
3	Photoluminescence of MBE grown wurtzite Be-doped GaN Semiconductor Science and Technology ·D J Dewsnip, A. V. Andrianov, I. Harrison, John Orton, D. E. Lacklison, Guanzhou Ren, S. E. Hooper, T.S. Cheng, C. T. Foxon	1998	56
4	Low-temperature luminescence study of GaN films grown by MBE Semiconductor Science and Technology ·A. V. Andrianov, D. E. Lacklison, John Orton, D J Dewsnip, S. E. Hooper, C. T. Foxon	1996	36
5	Morphology of luminescent GaN films grown by molecular beam epitaxy Applied Physics Letters ·C. Trager‐Cowan, K.P. O’Donnell, S. E. Hooper, C. T. Foxon	1996	34
6	InGaN multiple quantum well laser diodes grown by molecular beam epitaxy Electronics Letters ·S. E. Hooper, M. Kauer, V. Bousquet, Kelsey E. Johnson, J. Barnes, Jon Heffernan	2004	32
7	Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates Journal of Applied Physics ·D. E. Lacklison, John Orton, I. Harrison, T.S. Cheng, L. C. Jenkins, C. T. Foxon, S. E. Hooper	1995	30
8	Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·L. C. Jenkins, T.S. Cheng, C. T. Foxon, S. E. Hooper, John Orton, С. В. Новиков, V. V. Tret’yakov	1995	28
9	Strong carrier confinement inInxGa1−xN∕GaNquantum dots grown by molecular beam epitaxy Physical Review B ·M. Sénès, Katherine L. Smith, T. M. Smeeton, S. E. Hooper, Jon Heffernan	2007	27
10	The growth and properties of mixed group V nitrides Journal of Electronic Materials ·John Orton, D. E. Lacklison, N. Baba-Ali, C. T. Foxon, T.S. Cheng, С. В. Новиков, D. Johnston, S. E. Hooper, L. C. Jenkins, L. J. Challis, T.L. Tansley	1995	26
11	Growth and structural properties of low defect, sub-grain free CdTe substrates grown by the horizontal bridgman technique Journal of Electronic Materials ·A. Azim Khan, W. P. Allred, Brian Dean, S. E. Hooper, J. E. Hawkey, Carl J. Johnson	1986	26
12	The molecular beam epitaxial growth of InAs on GaAs(111)B- and (100)-oriented substrates: a comparative growth study Semiconductor Science and Technology ·S. E. Hooper, D.I. Westwood, D. A. Woolf, S S Heghoyan, R. H. Williams	1993	25
13	Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings Applied Physics Letters ·Marco Rossetti, T. M. Smeeton, W. S. Tan, M. Kauer, S. E. Hooper, Jon Heffernan, Huixin Xiu, C. J. Humphreys	2008	22
14	Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source Journal of Crystal Growth ·S. E. Hooper, C. T. Foxon, T.S. Cheng, L. C. Jenkins, D. E. Lacklison, John Orton, T. D. Bestwick, A.H. Kean, Martin D. Dawson, G. Duggan	1995	20
15	Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy Electronics Letters ·M. Kauer, S. E. Hooper, V. Bousquet, Kelsey E. Johnson, Christoph Zellweger, J. Barnes, J. Windle, T. M. Smeeton, Jon Heffernan	2005	19
16	Synthesis of widely tunable and highly luminescent zinc nitride nanocrystals Journal of Materials Chemistry C ·Peter N. Taylor, Michael A. Schreuder, T. M. Smeeton, A. J. D. Grundy, James A. R. Dimmock, S. E. Hooper, Jonathan Heffernan, M. Kauer	2014	19
17	Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing Applied Physics Letters ·Ian R. Sellers, W. S. Tan, Kathleen N. Smith, S. E. Hooper, S. Day, M. Kauer	2011	16
18	Incorporation of Mg in GaN grown by molecular beam epitaxy Journal of Crystal Growth ·John Orton, C. T. Foxon, T.S. Cheng, S. E. Hooper, С. В. Новиков, B. Ya. Ber, Yu. Kudriavtsev	1999	16
19	Photoluminescence and Raman scattering from GaN layers grown on GaAs and GaP substrates Semiconductor Science and Technology ·N. N. Zinov’ev, A. V. Andrianov, B. Ya. Averbukh, I. Yaroshetskii, Shijia Cheng, L. C. Jenkins, S. E. Hooper, C. T. Foxon, John Orton	1995	15
20	Auger investigation of group III nitride films grown by molecular beam epitaxy Journal of Crystal Growth ·С. В. Новиков, C. T. Foxon, T.S. Cheng, T.L. Tansley, John Orton, D. E. Lacklison, D. Johnston, N. Baba-Ali, S. E. Hooper, L. C. Jenkins, L. Eaves	1995	13

About S. E. Hooper

S. E. Hooper is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 52 papers that have together received 834 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (44 papers), Semiconductor Quantum Structures and Devices (41 papers), Ga2O3 and related materials (13 papers), Semiconductor materials and devices (13 papers), Metal and Thin Film Mechanics (10 papers), ZnO doping and properties (7 papers), Semiconductor Lasers and Optical Devices (3 papers) and Advanced Semiconductor Detectors and Materials (3 papers). The work is most often cited by research in Condensed Matter Physics (720 citations), Atomic and Molecular Physics, and Optics (463 citations), Electronic, Optical and Magnetic Materials (269 citations), Mechanics of Materials (176 citations) and Electrical and Electronic Engineering (374 citations). S. E. Hooper has collaborated with scholars based in United Kingdom, Russia and United States. Frequent co-authors include John Orton, T.S. Cheng, D. E. Lacklison, C. T. Foxon, L. C. Jenkins, Jon Heffernan, C. T. Foxon, M. Kauer, С. В. Новиков and T. M. Smeeton. Their work appears in journals such as Journal of Crystal Growth, Semiconductor Science and Technology, Applied Physics Letters, Electronics Letters and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S. E. Hooper

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