R.P. Smith

3.7k citations

89 papers · 2.8k · 1 hit paper · h-index 21

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Terahertz technology and applications
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Power Amplifier Design
- Microwave Engineering and Waveguides
- Silicon Carbide Semiconductor Technologies

Papers in

Condensed Matter Physics 23
- GaN-based semiconductor devices and materials 23
Electrical and Electronic Engineering 67
- Microwave Engineering and Waveguides 24
- Radio Frequency Integrated Circuit Design 23
- Advancements in Semiconductor Devices and Circuit Design 16
- Advanced Power Amplifier Design 12
- Terahertz technology and applications 7

Co-authors: Yifeng Wu (11 shared papers)Scott T. Sheppard (12 shared papers)A. Saxler (8 shared papers)Primit Parikh (6 shared papers)M. Moore (5 shared papers)P. Chavarkar (4 shared papers)T. Wisleder (3 shared papers)Umesh Kumar Mishra (3 shared papers)
Journals: IEEE Electron Device Letters (6 papers)IEEE Transactions on Microwave Theory and Techniques (6 papers)Electronics Letters (3 papers)Solid-State Electronics (2 papers)Applied Physics Letters (2 papers)
Partner nations: United States United Kingdom Germany

In The Last Decade

R.P. Smith

83 papers receiving 2.6k citations

R.P. Smith's Hit Papers

align trajectories log scale

30-W/mm GaN HEMTs by Field Plate Optimization 2004 · 921 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2004 IEEE Electron Device Letters

Peers

Countries citing papers authored by R.P. Smith

Since Specialization

Citations

This map shows the geographic impact of R.P. Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.P. Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.P. Smith more than expected).

Fields of papers citing papers by R.P. Smith

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.P. Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.P. Smith. The network helps show where R.P. Smith may publish in the future.

Co-authors

The 25 scholars most cited alongside R.P. Smith, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R.P. Smith Line = papers co-authored together R.P. Smith links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 89 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	30-W/mm GaN HEMTs by Field Plate Optimization IEEE Electron Device Letters ·Yifeng Wu, A. Saxler, M. Moore, R.P. Smith, Scott T. Sheppard, P. Chavarkar, T. Wisleder, Umesh Kumar Mishra Hit paper breakdown →	2004	921
2	2.5-THz GaAs monolithic membrane-diode mixer IEEE Transactions on Microwave Theory and Techniques ·Peter H. Siegel, R.P. Smith, M.C. Graidis +1 other	1999	170
3	Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz IEEE Electron Device Letters ·Mula Sreenivasa Reddy, Alyosha Christopher Molnar, R.P. Smith, Peter H. Siegel, Mark J. Mondry, Mark J. W. Rodwell, H. Kroemer, S. J. Allen +2 others	1997	149
4	Submicron scaling of HBTs IEEE Transactions on Electron Devices ·Mark J. W. Rodwell, Miguel E. Urteaga, T. Mathew, Dennis W. Scott, Dino Mensa, Q. Lee, Yoram Betser, R.P. Smith	2001	140
5	Direct field-resolved detection of terahertz transients with amplitudes of megavolts per centimeter Optics Letters ·Klaus Reimann, R.P. Smith, Andrew M. Weiner, Thomas Elsaesser, Michael Woerner	2003	116
6	kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz IEEE Transactions on Power Electronics ·Yifeng Wu, John Gritters, L. Shen, R.P. Smith, Brian L. Swenson	2013	108
7	A grid amplifier IEEE Microwave and Guided Wave Letters ·Michelle J. Kim, J.J. Rosenberg, R.P. Smith, Robert M. Weikle, J.B. Hacker, Michael P. DeLisio, David B. Rutledge	1991	105
8	A compact dual-polarized 8.51-GHz rectenna for high-voltage (50 V) actuator applications IEEE Transactions on Microwave Theory and Techniques ·Larry W. Epp, Aqdas Khan, H.K. Smith, R.P. Smith	2000	96
9	Submicron transferred-substrate heterojunction bipolar transistors IEEE Electron Device Letters ·Q. Lee, Dino Mensa, R.P. Smith, Mark J. W. Rodwell +2 others	1999	92
10	A 2.5-THz receiver front end for spaceborne applications IEEE Transactions on Microwave Theory and Techniques ·Michael C. Gaidis, Herbert M. Pickett, Cary D. Smith, R.P. Smith, Peter H. Siegel +1 other	2000	65
11	Wide bandgap semiconductor devices and MMICs for RF power applications Technical digest - International Electron Devices Meeting/Technical digest ·John W. Palmour, Scott T. Sheppard, R.P. Smith, W.L. Pribble, T.J. Smith, Zoltan Ring, Joseph J. Sumakeris, A. Saxler	2002	63
12	Applications of SiC MESFETs and GaN HEMTs in power amplifier design IEEE MTT-S International Microwave Symposium digest ·W.L. Pribble, John W. Palmour, Scott T. Sheppard, R.P. Smith, T.J. Smith, Zoltan Ring, Joseph J. Sumakeris, A. Saxler	2003	59
13	An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz IEEE Electron Device Letters ·Shujun Cai, L. W. Wong, Y. Chen, K. L. Wang, R.P. Smith, Karim S. Boutros, Joan Marie Redwing +2 others	1999	56
14	SCALING OF InGaAs/InAlAs HBTs FOR HIGH SPEED MIXED-SIGNAL AND mm -WAVE ICs International Journal of High Speed Electronics and Systems ·Mark J. W. Rodwell, Miguel E. Urteaga, Yoram Betser, T. Mathew, Dennis W. Scott, S. Jaganathan, Dino Mensa, RAJASEKHAR PULLELA	2001	56
15	Performance and robustness of first generation 600-V GaN-on-Si power transistors Yifeng Wu, John Gritters, L. Shen, R.P. Smith, J. McKay, Ron Barr, Ron Birkhahn	2013	39
16	Head and Neck Cancer: United Kingdom National Multidisciplinary Guidelines, Sixth Edition The Journal of Laryngology & Otology ·Jarrod James Homer, Stuart C. Winter, Elizabeth Abbey, Hiba Aga, Reshma Agrawal, Derfel ap Dafydd, Takhar Arunjit, Patrick Axon	2024	38
17	0.1 /spl mu/m Schottky-collector AlAs/GaAs resonant tunneling diodes IEEE Electron Device Letters ·R.P. Smith, S.T. Alien, Mula Sreenivasa Reddy, J. Liu, Mark J. W. Rodwell +2 others	1994	29
18	Fabrication and performance of planar Schottky diodes with T-gate-like anodes in 200-GHz subharmonically pumped waveguide mixers IEEE Microwave and Guided Wave Letters ·Imran Mehdi, Robert J. Dengler, R.P. Smith, Peter H. Siegel +1 other	1996	24
19	An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz Technical digest - International Electron Devices Meeting/Technical digest ·Yifeng Wu, Simon M. Wood, R.P. Smith, Scott T. Sheppard, Primit Parikh, J. Milligan +1 other	2006	24
20	Bias stabilization for resonant tunnel diode oscillators IEEE Microwave and Guided Wave Letters ·Mula Sreenivasa Reddy, Raymond Yu, H. Kroemer, Mark J. W. Rodwell, R.P. Smith +2 others	1995	23

About R.P. Smith

R.P. Smith is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics and Otorhinolaryngology, having authored 89 papers that have together received 2.8k indexed citations. Recurring topics across this work include Superconducting and THz Device Technology (25 papers), Microwave Engineering and Waveguides (24 papers), Radio Frequency Integrated Circuit Design (23 papers), GaN-based semiconductor devices and materials (23 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Advanced Power Amplifier Design (12 papers), Terahertz technology and applications (7 papers) and Semiconductor materials and interfaces (7 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electrical and Electronic Engineering (1.5k citations), Astronomy and Astrophysics (325 citations), Atomic and Molecular Physics, and Optics (236 citations) and Otorhinolaryngology (29 citations). R.P. Smith has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include Yifeng Wu, Scott T. Sheppard, A. Saxler, Primit Parikh, M. Moore, P. Chavarkar, T. Wisleder, Umesh Kumar Mishra, Peter H. Siegel and Mark J. W. Rodwell. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Microwave Theory and Techniques, Electronics Letters, Solid-State Electronics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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R.P. Smith's Hit Papers

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