U. Böttger

12.1k citations

131 papers · 9.9k · 4 hit papers · h-index 40

Impact in

Electrical and Electronic Engineering top 0.2%
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
Materials Chemistry top 0.5%
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 92
- Ferroelectric and Negative Capacitance Devices 45
- Advanced Memory and Neural Computing 45
- Semiconductor materials and devices 25
- Advanced MEMS and NEMS Technologies 12
Materials Chemistry 79
- Ferroelectric and Piezoelectric Materials 63
- Electronic and Structural Properties of Oxides 17

Co-authors: U. Schröder (7 shared papers)Johannes Müller (6 shared papers)T. S. Böscke (6 shared papers)D. Bräuhaus (9 shared papers)Rainer Waser (87 shared papers)Thomas Mikolajick (10 shared papers)Stephan Menzel (30 shared papers)L. Frey (3 shared papers)
Journals: Journal of Applied Physics (21 papers)Applied Physics Letters (18 papers)Integrated ferroelectrics (8 papers)IEEE Electron Device Letters (6 papers)Journal of the American Ceramic Society (4 papers)
Partner nations: Germany United States Japan

In The Last Decade

U. Böttger

128 papers receiving 9.8k citations

U. Böttger's Hit Papers

align trajectories log scale

Ferroelectricity in Simple Binary ZrO₂ and HfO₂ 2012 · 1.5k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2012 Nano Letters
2011 Applied Physics Letters
2011 Applied Physics Letters
2011 Journal of Applied Physics

Peers

Countries citing papers authored by U. Böttger

Since Specialization

Citations

This map shows the geographic impact of U. Böttger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Böttger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Böttger more than expected).

Fields of papers citing papers by U. Böttger

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Böttger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Böttger. The network helps show where U. Böttger may publish in the future.

Co-authors

The 25 scholars most cited alongside U. Böttger, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. Böttger Line = papers co-authored together U. Böttger links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 131 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ferroelectricity in hafnium oxide thin films Applied Physics Letters ·T. S. Böscke, Johannes Müller, D. Bräuhaus, U. Schröder, U. Böttger Hit paper breakdown →	2011	2176
2	Ferroelectricity in Simple Binary ZrO₂ and HfO₂ Nano Letters ·Johannes Müller, T. S. Böscke, U. Schröder, Stefan Mueller, D. Bräuhaus, U. Böttger, L. Frey, Thomas Mikolajick Hit paper breakdown →	2012	1489
3	Ferroelectricity in yttrium-doped hafnium oxide Journal of Applied Physics ·Johannes Müller, U. Schröder, T. S. Böscke, Indra Müller, U. Böttger, L. Wilde, Jonas Sundqvist, M. Lemberger, P. Kücher, Thomas Mikolajick, L. Frey Hit paper breakdown →	2011	592
4	Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications Applied Physics Letters ·Johannes Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, Jonas Sundqvist, P. Kücher, Thomas Mikolajick, L. Frey Hit paper breakdown →	2011	507
5	Phase transitions in ferroelectric silicon doped hafnium oxide Applied Physics Letters ·T. S. Böscke, St. Teichert, D. Bräuhaus, Johannes Müller, U. Schröder, U. Böttger, Thomas Mikolajick	2011	327
6	Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations Nanotechnology ·Eike Linn, R. Rosezin, Stefan Tappertzhofen, U. Böttger, Rainer Waser	2012	286
7	Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·T. S. Böscke, Johannes Müller, D. Bräuhaus, U. Schröder, U. Böttger	2011	283
8	Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches Advanced Functional Materials ·Stephan Menzel, M. Waters, Astrid Marchewka, U. Böttger, Regina Dittmann, Rainer Waser	2011	276
9	Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide Applied Physics Letters ·Sergej Starschich, Stephan Menzel, U. Böttger	2016	247
10	Physics of the Switching Kinetics in Resistive Memories Advanced Functional Materials ·Stephan Menzel, U. Böttger, Martin Wimmer, Martin Salinga	2015	240
11	Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors Nano Energy ·Michael Hoffmann, Uwe Schroeder, Christopher Künneth, Alfred Kersch, Sergej Starschich, U. Böttger, Thomas Mikolajick	2015	189
12	About the deformation of ferroelectric hystereses Applied Physics Reviews ·Tony Schenk, Ekaterina Yurchuk, Stefan Mueller, Uwe Schroeder, Sergej Starschich, U. Böttger, Thomas Mikolajick	2014	168
13	Current status and challenges of ferroelectric memory devices Microelectronic Engineering ·H. Kohlstedt, Yacoub Mustafa, Andreas Gerber, A. Petraru, M. Fitsilis, R. Meyer, U. Böttger, Rainer Waser	2005	149
14	Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes Applied Physics Letters ·Sergej Starschich, David Griesche, Theodor Schneller, Rainer Waser, U. Böttger	2014	143
15	Simulation of multilevel switching in electrochemical metallization memory cells Journal of Applied Physics ·Stephan Menzel, U. Böttger, Rainer Waser	2012	136
16	Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy Applied Physics Letters ·Andreas Roelofs, U. Böttger, Rainer Waser, F. Schlaphof, S. Trogisch, Lukas M. Eng	2000	131
17	Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior APL Materials ·Felix Cüppers, Stephan Menzel, Christopher Bengel, Alexander Hardtdegen, Moritz von Witzleben, U. Böttger, Rainer Waser, Susanne Hoffmann‐Eifert	2019	113
18	Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics Advanced Electronic Materials ·Franz P. G. Fengler, Milan Pešić, Sergej Starschich, Theodor Schneller, Christopher Künneth, U. Böttger, Halid Mulaosmanovic, Tony Schenk, Min Hyuk Park, Robin Nigon, Paul Muralt, Thomas Mikolajick, Uwe Schroeder	2017	111
19	Mechanical force sensors using organic thin-film transistors Journal of Applied Physics ·Grzegorz Darlinski, U. Böttger, Rainer Waser, Hagen Klauk, Marcus Halik, Ute Zschieschang, Günter Schmid, C. Dehm	2005	83
20	Grain-Boundary Effect on the Curie-Weiss Law of Ferroelectric Ceramics and Polycrystalline Thin Films: Calculation by the Method of Effective Medium Journal of Electroceramics ·A. Yu. Emelyanov, N. A. Pertsev, Susanne Hoffmann‐Eifert, U. Böttger, Rainer Waser	2002	77

About U. Böttger

U. Böttger is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Cellular and Molecular Neuroscience and Electronic, Optical and Magnetic Materials, having authored 131 papers that have together received 9.9k indexed citations. Recurring topics across this work include Ferroelectric and Piezoelectric Materials (63 papers), Ferroelectric and Negative Capacitance Devices (45 papers), Advanced Memory and Neural Computing (45 papers), Acoustic Wave Resonator Technologies (40 papers), Semiconductor materials and devices (25 papers), Electronic and Structural Properties of Oxides (17 papers), Neuroscience and Neural Engineering (13 papers) and Advanced MEMS and NEMS Technologies (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (8.8k citations), Materials Chemistry (6.5k citations), Cellular and Molecular Neuroscience (830 citations), Electronic, Optical and Magnetic Materials (734 citations) and Polymers and Plastics (498 citations). U. Böttger has collaborated with scholars based in Germany, United States and Japan. Frequent co-authors include U. Schröder, Johannes Müller, T. S. Böscke, D. Bräuhaus, Rainer Waser, Thomas Mikolajick, Stephan Menzel, L. Frey, Sergej Starschich and Stefan Mueller. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Integrated ferroelectrics, IEEE Electron Device Letters and Journal of the American Ceramic Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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U. Böttger's Hit Papers

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