D. T. Olson

4.1k citations

30 papers · 3.6k · 1 hit paper · h-index 21

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 30
- GaN-based semiconductor devices and materials 30
Electronic, Optical and Magnetic Materials 13
- Ga2O3 and related materials 13

Co-authors: J. N. Kuznia (28 shared papers)Md Asif Khan (15 shared papers)Amal R. Bhattarai (5 shared papers)James M. Van Hove (8 shared papers)M. Asif Khan (6 shared papers)M. Asif Khan (4 shared papers)J. A. Freitas (4 shared papers)Jinwook Burm (3 shared papers)
Journals: Applied Physics Letters (17 papers)Journal of Applied Physics (3 papers)Journal of Electronic Materials (2 papers)Electronics Letters (1 paper)Physical review. B, Condensed matter (2 papers)
Partner nations: United States

In The Last Decade

D. T. Olson

30 papers receiving 3.5k citations

D. T. Olson's Hit Papers

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High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction 1993 · 769 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

1993 Applied Physics Letters

Peers

Countries citing papers authored by D. T. Olson

Since Specialization

Citations

This map shows the geographic impact of D. T. Olson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. T. Olson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. T. Olson more than expected).

Fields of papers citing papers by D. T. Olson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. T. Olson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. T. Olson. The network helps show where D. T. Olson may publish in the future.

Co-authors

The 25 scholars most cited alongside D. T. Olson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. T. Olson Line = papers co-authored together D. T. Olson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 30 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction Applied Physics Letters ·Md Asif Khan, Amal R. Bhattarai, J. N. Kuznia, D. T. Olson Hit paper breakdown →	1993	769
2	High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers Applied Physics Letters ·Md Asif Khan, J. N. Kuznia, D. T. Olson, James M. Van Hove, M. Blasingame, Larry F. Reitz	1992	341
3	Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor Applied Physics Letters ·Md Asif Khan, J. N. Kuznia, D. T. Olson, William J Schaff, Jinwook Burm, Michael S. Shur	1994	307
4	Metal semiconductor field effect transistor based on single crystal GaN Applied Physics Letters ·M. Asif Khan, J. N. Kuznia, Amal R. Bhattarai, D. T. Olson	1993	304
5	Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition Physical review. B, Condensed matter ·Evan R. Glaser, Teresa A. Kennedy, Kathleen Doverspike, L.B. Rowland, David Kurt Gaskill, J. A. Freitas, Md Asif Khan, D. T. Olson	1995	289
6	Schottky barrier photodetector based on Mg-doped p-type GaN films Applied Physics Letters ·M. Asif Khan, J. N. Kuznia, D. T. Olson, M. Blasingame, Amal R. Bhattarai	1993	170
7	Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates Journal of Applied Physics ·J. N. Kuznia, M. Asif Khan, D. T. Olson, Ray Kaplan, Jamie Freitas	1993	167
8	Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition Applied Physics Letters ·M. Asif Khan, J. N. Kuznia, James M. Van Hove, D. T. Olson, Subash Krishnankutty, Robert M. Kolbas	1991	148
9	High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor deposition Applied Physics Letters ·Md Asif Khan, James M. Van Hove, J. N. Kuznia, D. T. Olson	1991	142
10	Electron-spin-resonance studies of donors in wurtzite GaN Physical review. B, Condensed matter ·William E. Carlos, J. A. Freitas, Md Asif Khan, D. T. Olson, J. N. Kuznia	1993	119
11	Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates Applied Physics Letters ·M. Asif Khan, J. N. Kuznia, R. A. Skogman, D. T. Olson, M. Mac Millan, Wolfgang J. Choyke	1992	106
12	Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition Applied Physics Letters ·M. Asif Khan, D. T. Olson, James M. Van Hove, J. N. Kuznia	1991	101
13	Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition Applied Physics Letters ·Md Asif Khan, R. A. Skogman, James M. Van Hove, D. T. Olson, J. N. Kuznia	1992	92
14	GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition Applied Physics Letters ·Md Asif Khan, J. N. Kuznia, D. T. Olson, Thomas H. George, William Pike	1993	79
15	Deposition and surface characterization of high quality single crystal GaN layers Journal of Applied Physics ·M. Asif Khan, J. N. Kuznia, D. T. Olson, R. Kaplan	1993	73
16	Characteristics of chemically assisted ion beam etching of gallium nitride Applied Physics Letters ·I. Adesida, A. T. Ping, Chris Youtsey, T. A. Dow, Md Asif Khan, D. T. Olson, J. N. Kuznia	1994	71
17	Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature Applied Physics Letters ·M. Asif Khan, Subash Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson, Thomas H. George	1994	58
18	Effects of AlGaN/GaN HEMT structure on RF reliability Electronics Letters ·C. Lee, L. Witkowski, Hua Quen Tserng, P. Saunier, Ronald H. Birkhahn, D. T. Olson, Donald B. Olson, G.O. Munns	2005	54
19	Reflective filters based on single-crystal GaN/AlxGa1−xN multilayers deposited using low-pressure metalorganic chemical vapor deposition Applied Physics Letters ·M. Asif Khan, J. N. Kuznia, James M. Van Hove, D. T. Olson	1991	51
20	Observation of optically detected magnetic resonance in GaN films Applied Physics Letters ·Evan R. Glaser, Thomas A. Kennedy, H. C. Crookham, J. A. Freitas, Md Asif Khan, D. T. Olson, J. N. Kuznia	1993	39

About D. T. Olson

D. T. Olson is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 30 papers that have together received 3.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), ZnO doping and properties (14 papers), Ga2O3 and related materials (13 papers), Metal and Thin Film Mechanics (9 papers), Semiconductor materials and devices (8 papers), Semiconductor Quantum Structures and Devices (5 papers), Gas Sensing Nanomaterials and Sensors (2 papers) and Photocathodes and Microchannel Plates (2 papers). The work is most often cited by research in Condensed Matter Physics (3.2k citations), Electronic, Optical and Magnetic Materials (1.5k citations), Atomic and Molecular Physics, and Optics (1.1k citations), Materials Chemistry (1.3k citations) and Electrical and Electronic Engineering (1.6k citations). D. T. Olson has collaborated with scholars based in United States. Frequent co-authors include J. N. Kuznia, Md Asif Khan, Amal R. Bhattarai, James M. Van Hove, M. Asif Khan, M. Asif Khan, J. A. Freitas, Jinwook Burm, Michael S. Shur and William J Schaff. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, Electronics Letters and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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D. T. Olson

D. T. Olson's Hit Papers

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