L. Desplanque

1.4k citations
87 papers · 1.0k · h-index 20

Impact in

    • Semiconductor Quantum Structures and Devices
    • Quantum and electron transport phenomena
    • Advancements in Semiconductor Devices and Circuit Design
    • Semiconductor materials and devices
    • Advanced Semiconductor Detectors and Materials
    • Terahertz technology and applications
    • Photonic and Optical Devices

Papers in

L. Desplanque

85 papers receiving 985 citations

Peers

L. Desplanque
Comparison fields: 5 of 45
  • Atomic and Molecular Physics, and Optics 675
  • Electrical and Electronic Engineering 779
  • Condensed Matter Physics 67
  • Biomedical Engineering 220
  • Materials Chemistry 212
Replace D. V. Fateev with:
D. V. Fateev Russia
C. Kadow United States
Stéphane Boubanga Tombet Japan
H. D. Shih United States
Dmitry Svintsov Russia
Kyu‐Ha Jang South Korea
S. G. Matsik United States
U. Dillner Germany
Jan Grahn Sweden
Bijan Ghafary Iran
L. Desplanque relative to D. V. Fateev Russia D. V. Fateev's profile →
Citations per field
00.5×1.5×2.4×
D. V. Fateev · 1×
Citations per year

Countries citing papers authored by L. Desplanque

Since Specialization
Citations

This map shows the geographic impact of L. Desplanque's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Desplanque with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Desplanque more than expected).

Fields of papers citing papers by L. Desplanque

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Desplanque. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Desplanque. The network helps show where L. Desplanque may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Desplanque, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Desplanque Line = papers co-authored together L. Desplanque links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 87 papers — load more, or switch the sort, to bring in the rest.

#Work
1 201162
2 201043
3 201341
4 200239
5 201234
6 201132
7 200131
8 200830
9 200729
10 201627
11 201225
12 200525
13 200725
14 201824
15 201424
16 202023
17 200423
18 201222
19 201220
20 201319

About L. Desplanque

L. Desplanque is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Astronomy and Astrophysics, having authored 87 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers), Advanced Semiconductor Detectors and Materials (27 papers), Semiconductor materials and devices (26 papers), Nanowire Synthesis and Applications (19 papers), Quantum and electron transport phenomena (12 papers), Terahertz technology and applications (11 papers) and Superconducting and THz Device Technology (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (675 citations), Electrical and Electronic Engineering (779 citations), Condensed Matter Physics (67 citations), Biomedical Engineering (220 citations) and Materials Chemistry (212 citations). L. Desplanque has collaborated with scholars based in France, Sweden and Belgium. Frequent co-authors include X. Wallart, P. Ruterana, Jan Grahn, Salim El Kazzi, F. Mollot, D. Troadec, G. Patriarche, H. Sellier, Marco Pala and Frederico Martins. Their work appears in journals such as Applied Physics Letters, Nanotechnology, Solid-State Electronics, Journal of Applied Physics and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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