J.W. Sleight

3.0k citations

63 papers · 2.0k · 1 hit paper · h-index 22

Impact in

Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Low-power high-performance VLSI design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
Hardware and Architecture top 5%

Papers in

Electrical and Electronic Engineering 52
- Advancements in Semiconductor Devices and Circuit Design 46
- Semiconductor materials and devices 44
- Integrated Circuits and Semiconductor Failure Analysis 13
- Low-power high-performance VLSI design 5
Atomic and Molecular Physics, and Optics 17
- Semiconductor Quantum Structures and Devices 9
- Quantum and electron transport phenomena 9

Co-authors: L. Šekarić (4 shared papers)Sarunya Bangsaruntip (10 shared papers)G. M. Cohen (10 shared papers)Wilfried Haensch (11 shared papers)Amlan Majumdar (7 shared papers)Mark A. Reed (9 shared papers)M. R. Deshpande (7 shared papers)David Fried (3 shared papers)
Journals: IEEE Electron Device Letters (7 papers)Applied Physics Letters (5 papers)IEEE Transactions on Electron Devices (5 papers)Physical review. B, Condensed matter (4 papers)Microscopy and Microanalysis (2 papers)
Partner nations: United States Canada Israel

In The Last Decade

J.W. Sleight

62 papers receiving 1.9k citations

J.W. Sleight's Hit Papers

align trajectories log scale

Stable SRAM cell design for the 32 nm node and beyond 2005 · 449 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2005 Stable SRAM cell design for the 32 nm node and beyond

Peers

Countries citing papers authored by J.W. Sleight

Since Specialization

Citations

This map shows the geographic impact of J.W. Sleight's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.W. Sleight with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.W. Sleight more than expected).

Fields of papers citing papers by J.W. Sleight

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.W. Sleight. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.W. Sleight. The network helps show where J.W. Sleight may publish in the future.

Co-authors

The 25 scholars most cited alongside J.W. Sleight, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.W. Sleight Line = papers co-authored together J.W. Sleight links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 63 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Stable SRAM cell design for the 32 nm node and beyond L. Chang, David Fried, J. M. Hergenrother, J.W. Sleight, R.H. Dennard, Robert K. Montoye, L. Šekarić, Sharee J. McNab, Anna W. Topol, Charlotte Adams, K.W. Guarini, Wilfried Haensch Hit paper breakdown →	2005	449
2	High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling Sarunya Bangsaruntip, G. M. Cohen, A. Majumdar, Y. Zhang, S. U. Engelmann, Nicholas Fuller, Lynne Gignac, S. Mittal, J. Newbury, Michael Guillorn, Tymon Barwicz, L. Šekarić, Martin M. Frank, J.W. Sleight	2009	239
3	Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs IEEE Electron Device Letters ·Sarunya Bangsaruntip, G. M. Cohen, Amlan Majumdar, J.W. Sleight	2010	151
4	Microfabrication of a mechanically controllable break junction in silicon Applied Physics Letters ·Chongwu Zhou, Christine Müller, M. R. Deshpande, J.W. Sleight, Mark A. Reed	1995	115
5	Measurement of Carrier Mobility in Silicon Nanowires Nano Letters ·Oki Gunawan, L. Šekarić, Amlan Majumdar, M. J. Rooks, Joerg Appenzeller, J.W. Sleight, Supratik Guha, Wilfried Haensch	2008	95
6	Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond Sarunya Bangsaruntip, Karthik Balakrishnan, S.-L. Cheng, Josephine Chang, Markus Brink, Isaac Lauer, Robert L. Bruce, Sebastian Engelmann, A. Pyzyna, G. M. Cohen, Lynne Gignac, Chris Breslin, J. Newbury, D. Klaus, A. Majumdar, J.W. Sleight, Michael Guillorn	2013	79
7	Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/ E. Cartier, F. R. McFeely, Vijay Narayanan, P. Jamison, B.P. Linder, M. Copel, Vamsi Paruchuri, Veeraraghavan Basker, Richard Haight, Dong Woo Lim, R. Carruthers, T. M. Shaw, M. Steen, J.W. Sleight, J. Germán Rubino, Hariklia Deligianni, Supratik Guha, R. Jammy, G. Shahidi	2005	52
8	A continuous compact MOSFET model for fully- and partially-depleted SOI devices IEEE Transactions on Electron Devices ·J.W. Sleight, R. Rios	1998	49
9	Spin Splitting of Single 0D Impurity States in Semiconductor Heterostructure Quantum Wells Physical Review Letters ·M. R. Deshpande, J.W. Sleight, Mark A. Reed, R. G. Wheeler, R. J. Matyi	1996	49
10	Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm Sarunya Bangsaruntip, A. Majumdar, G. M. Cohen, Sebastian Engelmann, Y. Zhang, Michael Guillorn, Lynne Gignac, S. Mittal, W. S. Graham, Eric Joseph, D. Klaus, Josephine Chang, E. Cartier, J.W. Sleight	2010	43
11	Atomic force microscopy study of electron beam written contamination structures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Amman, J.W. Sleight, D.R. Lombardi, Roger E. Welser, M. R. Deshpande, Mark A. Reed, L. J. Guido	1996	43
12	Energy-averaged weak localization in chaotic microcavities Physical review. B, Condensed matter ·Mark W. Keller, Arpit Mittal, J.W. Sleight, R. G. Wheeler, D. E. Prober, R. N. Sacks, H. Shtrikmann	1996	38
13	Environmental radiation impact on lifetimes and quasiparticle tunneling rates of fixed-frequency transmon qubits Applied Physics Letters ·R. T. Gordon, Conal E. Murray, Cihan Kurter, Martin Sandberg, Shawn A. Hall, Karthik Balakrishnan, R. M. Shelby, Brent A. Wacaser, Adam Stabile, J.W. Sleight, Markus Brink, Mary Beth Rothwell, Kenneth P. Rodbell, Oliver Dial, Matthias Steffen	2022	37
14	Challenges and Opportunities for High Performance 32 nm CMOS Technology J.W. Sleight, Isaac Lauer, O. Dokumaci, David Fried, Dechao Guo, Bala Haran, Tosihide H. YOSIDA, C. Sheraw, D. Singh, Michael Steigerwalt, X. Wang, P. Oldiges, D. K. Sadana, C.Y. Sung, Wilfried Haensch, Mukesh Khare	2006	36
15	Controlling floating-body effects for 0.13 μm and 0.10 μm SOI CMOS S.K.H. Fung, N. Zamdmer, Phil Oldiges, J.W. Sleight, A. Mocuta, M. Sherony, S.-H. Lo, (unknown), C.T. Chuang, Insoon Yang, S. Crowder, T.C. Chen, F. Assaderaghi, G. Shahidi	2002	28
16	Stress induced defects and transistor leakage for shallow trench isolated SOI IEEE Electron Device Letters ·J.W. Sleight, Chnan Lin, G.J. Grula	1999	28
17	High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors IEEE Electron Device Letters ·Amlan Majumdar, Zhibin Ren, J.W. Sleight, David Dobuzinsky, J. Holt, R. Venigalla, Steven J. Koester, Wilfried Haensch	2008	27
18	Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond A. Khakifirooz, Kangguo Cheng, B. Jagannathan, Pranita Kulkarni, J.W. Sleight, Davood Shahrjerdi, Josephine Chang, Sungjae Lee, Junjun Li, Huiming Bu, Robert Gauthier, B. Doris, G. Shahidi	2010	27
19	LOCOS-induced stress effects on thin-film SOI devices IEEE Transactions on Electron Devices ·Cheng-Liang Huang, H. Rahimpour Soleimani, G.J. Grula, J.W. Sleight, Angelo Villani, Hanan Ali, D.A. Antoniadis	1997	26
20	Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires Applied Physics Letters ·L. Šekarić, Oki Gunawan, Amlan Majumdar, Xiaohu Liu, Dana Weinstein, J.W. Sleight	2009	24

About J.W. Sleight

J.W. Sleight is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics and Artificial Intelligence, having authored 63 papers that have together received 2.0k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (46 papers), Semiconductor materials and devices (44 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Nanowire Synthesis and Applications (12 papers), Semiconductor Quantum Structures and Devices (9 papers), Quantum and electron transport phenomena (9 papers), Physics of Superconductivity and Magnetism (6 papers) and Low-power high-performance VLSI design (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Hardware and Architecture (119 citations), Structural Biology (22 citations), Atomic and Molecular Physics, and Optics (333 citations) and Biomedical Engineering (457 citations). J.W. Sleight has collaborated with scholars based in United States, Canada and Israel. Frequent co-authors include L. Šekarić, Sarunya Bangsaruntip, G. M. Cohen, Wilfried Haensch, Amlan Majumdar, Mark A. Reed, M. R. Deshpande, David Fried, J. M. Hergenrother and L. Chang. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Physical review. B, Condensed matter and Microscopy and Microanalysis.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

J.W. Sleight

Impact in

Papers in i

In The Last Decade

J.W. Sleight

J.W. Sleight's Hit Papers

Peers

Countries citing papers authored by J.W. Sleight

Fields of papers citing papers by J.W. Sleight

All Works

About J.W. Sleight

Explore authors with similar magnitude of impact

Papers in