Andrei Vescan
Impact in
- Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- Semiconductor materials and devices 73
- Silicon Carbide Semiconductor Technologies 26
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- GaN-based semiconductor devices and materials 127
- Co-authors
- H. Kalisch (158 shared papers)M. Heuken (123 shared papers)E. Kohn (25 shared papers)Wolfgang Ebert (22 shared papers)H. Hahn (29 shared papers)P. Gluche (14 shared papers)B. Reuters (25 shared papers)N. Ketteniss (22 shared papers)
- Journals
- Semiconductor Science and Technology (15 papers)Journal of Crystal Growth (13 papers)IEEE Electron Device Letters (10 papers)Diamond and Related Materials (9 papers)IEEE Transactions on Electron Devices (9 papers)
- Partner nations
- GermanyUnited StatesSpain
In The Last Decade
Andrei Vescan
206 papers receiving 3.4k citations
Peers
Comparison fields: 5 of 53
- Condensed Matter Physics 2.1k
- Electronic, Optical and Magnetic Materials 1.1k
- Electrical and Electronic Engineering 2.4k
- Materials Chemistry 1.7k
- Mechanics of Materials 527
Countries citing papers authored by Andrei Vescan
This map shows the geographic impact of Andrei Vescan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrei Vescan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrei Vescan more than expected).
Fields of papers citing papers by Andrei Vescan
This network shows the impact of papers produced by Andrei Vescan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrei Vescan. The network helps show where Andrei Vescan may publish in the future.
Co-authors
The 25 scholars most cited alongside Andrei Vescan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 214 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 2004 | 189 | |
| 2 | 2001 | 130 | |
| 3 | 2002 | 102 | |
| 4 | 1997 | 97 | |
| 5 | 2008 | 90 | |
| 6 | 2020 | 77 | |
| 7 | 2001 | 73 | |
| 8 | 2011 | 71 | |
| 9 | 2013 | 71 | |
| 10 | 2014 | 71 | |
| 11 | 1999 | 70 | |
| 12 | 2019 | 68 | |
| 13 | 1997 | 68 | |
| 14 | 1998 | 67 | |
| 15 | 2010 | 62 | |
| 16 | 2014 | 59 | |
| 17 | 2003 | 51 | |
| 18 | 2020 | 48 | |
| 19 | 2018 | 48 | |
| 20 | 1997 | 46 |
About Andrei Vescan
Andrei Vescan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 214 papers that have together received 3.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (127 papers), Semiconductor materials and devices (73 papers), Ga2O3 and related materials (62 papers), 2D Materials and Applications (36 papers), ZnO doping and properties (32 papers), Metal and Thin Film Mechanics (29 papers), Silicon Carbide Semiconductor Technologies (26 papers) and Diamond and Carbon-based Materials Research (25 papers). The work is most often cited by research in Condensed Matter Physics (2.1k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Electrical and Electronic Engineering (2.4k citations), Materials Chemistry (1.7k citations) and Mechanics of Materials (527 citations). Andrei Vescan has collaborated with scholars based in Germany, United States and Spain. Frequent co-authors include H. Kalisch, M. Heuken, E. Kohn, Wolfgang Ebert, H. Hahn, P. Gluche, B. Reuters, N. Ketteniss, E. L. Piner and T.H. Borst. Their work appears in journals such as Semiconductor Science and Technology, Journal of Crystal Growth, IEEE Electron Device Letters, Diamond and Related Materials and IEEE Transactions on Electron Devices.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.