J. Rebollo

4.1k citations

116 papers · 3.3k · 1 hit paper · h-index 17

Impact in

Electrical and Electronic Engineering top 1%
- Silicon Carbide Semiconductor Technologies
- Advanced DC-DC Converters
- Multilevel Inverters and Converters
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Electronic Packaging and Soldering Technologies
- Electromagnetic Compatibility and Noise Suppression
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 115
- Silicon Carbide Semiconductor Technologies 90
- Advancements in Semiconductor Devices and Circuit Design 34
- Semiconductor materials and devices 23
- Electrostatic Discharge in Electronics 6
Atomic and Molecular Physics, and Optics 4
- Semiconductor materials and interfaces 3

Co-authors: Philippe Godignon (51 shared papers)X. Perpiñà (14 shared papers)Amador Pérez‐Tomás (2 shared papers)X. Jordà (28 shared papers)S. Hidalgo (52 shared papers)David Flores (52 shared papers)J. Montserrat (22 shared papers)Victor Soler (15 shared papers)
Journals: Solid-State Electronics (12 papers)Microelectronics Reliability (8 papers)Semiconductor Science and Technology (8 papers)IEEE Transactions on Industrial Electronics (5 papers)IEEE Electron Device Letters (4 papers)
Partner nations: Spain France Switzerland

In The Last Decade

J. Rebollo

114 papers receiving 3.2k citations

J. Rebollo's Hit Papers

align trajectories log scale

A Survey of Wide Bandgap Power Semiconductor Devices 2013 · 2.1k citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2013 IEEE Transactions on Power Electronics

Peers

Countries citing papers authored by J. Rebollo

Since Specialization

Citations

This map shows the geographic impact of J. Rebollo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Rebollo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Rebollo more than expected).

Fields of papers citing papers by J. Rebollo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Rebollo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Rebollo. The network helps show where J. Rebollo may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Rebollo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Rebollo Line = papers co-authored together J. Rebollo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 116 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A Survey of Wide Bandgap Power Semiconductor Devices IEEE Transactions on Power Electronics ·Philippe Godignon, X. Perpiñà, Amador Pérez‐Tomás, J. Rebollo +1 other Hit paper breakdown →	2013	2125
2	Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects Renewable and Sustainable Energy Reviews ·Asier Matallana, Edorta Ibarra, Iraide López Ropero, Jon Andreu, José Ignacio Gárate, X. Jordà, J. Rebollo	2019	138
3	Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review Materials Science in Semiconductor Processing ·Maria Cabello, Victor Soler, Gemma Rius, J. Montserrat, J. Rebollo, Philippe Godignon	2017	125
4	Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems IEEE Transactions on Industrial Electronics ·X. Perpiñà, X. Jordà, Miquel Vellvehi, J. Rebollo, Michel Mermet-Guyennet	2010	57
5	Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions IEEE Transactions on Industrial Electronics ·X. Perpiñà, J.F. Servière, J. Urresti, Ignasi Cortés, X. Jordà, S. Hidalgo, J. Rebollo, Michel Mermet-Guyennet	2010	52
6	High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures Solid-State Electronics ·Jose Fernandez, Philippe Godignon, Stefan Berberich, J. Rebollo, Gheorghe Brezeanu +1 other	1996	43
7	Study of novel techniques for reducing self-heating effects in SOI power LDMOS Solid-State Electronics ·J. Roig, David Flores, S. Hidalgo, Miquel Vellvehi, J. Rebollo +1 other	2002	33
8	Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile Microelectronics Reliability ·J. Roig, David Flores, J. Urresti, S. Hidalgo, J. Rebollo +1 other	2004	31
9	IGBT module failure analysis in railway applications Microelectronics Reliability ·X. Perpiñà, J.F. Servière, X. Jordà, A. Fauquet, S. Hidalgo, J. Urresti, J. Rebollo, Michel Mermet-Guyennet	2008	30
10	Theoretical evidence for the kick-out mechanism for B diffusion in SiC Applied Physics Letters ·Riccardo Rurali, Philippe Godignon, J. Rebollo, Pablo Ordejón, Eduardo R. Hernandez	2002	25
11	First-principles study of n-type dopants and their clustering in SiC Applied Physics Letters ·Riccardo Rurali, Philippe Godignon, J. Rebollo, Eduardo R. Hernandez, Pablo Ordejón	2003	25
12	Layout Role in Failure Physics of IGBTs Under Overloading Clamped Inductive Turnoff IEEE Transactions on Electron Devices ·X. Perpiñà, Ignasi Cortés, J. Urresti, X. Jordà, J. Rebollo	2012	24
13	First-principles studies of the diffusion of B impurities and vacancies in SiC Physical Review B ·Riccardo Rurali, Eduardo R. Hernandez, Philippe Godignon, J. Rebollo, Pablo Ordejón	2004	23
14	High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide IEEE Transactions on Industrial Electronics ·Victor Soler, Maria Cabello, Maxime Berthou, J. Montserrat, J. Rebollo, Philippe Godignon, Andrei Mihăilă, María R. Rogina	2017	22
15	A numerical study of field plate configurations in RF SOI LDMOS transistors Solid-State Electronics ·J. Roig, David Flores, J. Urresti, S. Hidalgo, J. Rebollo +1 other	2005	20
16	Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices IEEE Transactions on Industrial Electronics ·Manuel Fernández Martínez, X. Perpiñà, J. Rebollo, Miquel Vellvehi, David Sanchez, Tomas Cabeza, Sergio Llorente, X. Jordà	2018	20
17	Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors Applied Physics Letters ·Maria Cabello, Victor Soler, J. Montserrat, J. Rebollo, Joan Marc Rafi, Philippe Godignon	2017	19
18	First principles studies of neutral vacancies diffusion in SiC Computational Materials Science ·Riccardo Rurali, Eduardo R. Hernandez, Philippe Godignon, J. Rebollo, Pablo Ordejón	2003	17
19	Robustness test and failure analysis of IGBT modules during turn-off Microelectronics Reliability ·J. Urresti, Alberto Castellazzi, Michel Piton, J. Rebollo, Michel Mermet-Guyennet, Mauro Ciappa	2007	15
20	New trends in high voltage MOSFET based on wide band gap materials CAS proceedings ·Philippe Godignon, Victor Soler, Maria Cabello, J. Montserrat, J. Rebollo, Lars Knoll, Enea Bianda, Andrei Mihăilă	2017	15

About J. Rebollo

J. Rebollo is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Ceramics and Composites and Materials Chemistry, having authored 116 papers that have together received 3.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (90 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers), Semiconductor materials and devices (23 papers), Electrostatic Discharge in Electronics (6 papers), Semiconductor materials and interfaces (3 papers), Ion-surface interactions and analysis (2 papers), Analog and Mixed-Signal Circuit Design (2 papers) and Advanced ceramic materials synthesis (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (2.7k citations), Condensed Matter Physics (425 citations), Electronic, Optical and Magnetic Materials (120 citations), Materials Chemistry (151 citations) and Ceramics and Composites (16 citations). J. Rebollo has collaborated with scholars based in Spain, France and Switzerland. Frequent co-authors include Philippe Godignon, X. Perpiñà, Amador Pérez‐Tomás, X. Jordà, S. Hidalgo, David Flores, J. Montserrat, Victor Soler, J. Urresti and Miquel Vellvehi. Their work appears in journals such as Solid-State Electronics, Microelectronics Reliability, Semiconductor Science and Technology, IEEE Transactions on Industrial Electronics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J. Rebollo

J. Rebollo's Hit Papers

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