H. Ryssel

6.5k citations
447 papers · 5.4k · h-index 35

Impact in

Papers in

    • Silicon and Solar Cell Technologies 142
    • Semiconductor materials and devices 140
    • Integrated Circuits and Semiconductor Failure Analysis 121
    • Advancements in Semiconductor Devices and Circuit Design 44
    • Silicon Carbide Semiconductor Technologies 42
    • Ion-surface interactions and analysis 120

H. Ryssel

421 papers receiving 5.1k citations

Peers

H. Ryssel
Comparison fields: 5 of 124
  • Structural Biology 159
  • Computational Mechanics 1.7k
  • Surfaces, Coatings and Films 490
  • Electrical and Electronic Engineering 3.7k
  • Atomic and Molecular Physics, and Optics 1.3k
Replace Ningsheng Xu with:
Ningsheng Xu China
Christian Teichert Austria
Paul S. Ho United States
John T. L. Thong Singapore
I. Brodie United States
Katsuyo Thornton United States
Benedetto Bozzini Italy
Hidenori Mimura Japan
M. Umeno Japan
Karen Maex Belgium
H. Ryssel relative to Ningsheng Xu China Ningsheng Xu's profile →
Citations per field
00.5×1.5×2.3×
Ningsheng Xu · 1×
Citations per year

Countries citing papers authored by H. Ryssel

Since Specialization
Citations

This map shows the geographic impact of H. Ryssel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Ryssel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Ryssel more than expected).

Fields of papers citing papers by H. Ryssel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Ryssel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Ryssel. The network helps show where H. Ryssel may publish in the future.

Co-authors

The 25 scholars most cited alongside H. Ryssel, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Ryssel Line = papers co-authored together H. Ryssel links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 447 papers — load more, or switch the sort, to bring in the rest.

#Work
1 1982298
2
Ion Implantation
1973246
3 2003144
4 1997141
5 1983118
6 199296
7 199886
8 200185
9 197880
10 198576
11 200874
12 198072
13 200867
14 198066
15 200962
16 199761
17 198154
18 200048
19 200847
20 199646

About H. Ryssel

H. Ryssel is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Biomedical Engineering, having authored 447 papers that have together received 5.4k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (142 papers), Semiconductor materials and devices (140 papers), Integrated Circuits and Semiconductor Failure Analysis (121 papers), Ion-surface interactions and analysis (120 papers), Semiconductor materials and interfaces (78 papers), Metal and Thin Film Mechanics (45 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Silicon Carbide Semiconductor Technologies (42 papers). The work is most often cited by research in Structural Biology (159 citations), Computational Mechanics (1.7k citations), Surfaces, Coatings and Films (490 citations), Electrical and Electronic Engineering (3.7k citations) and Atomic and Molecular Physics, and Optics (1.3k citations). H. Ryssel has collaborated with scholars based in Germany, Hungary and Japan. Frequent co-authors include L. Frey, H. Glawischnig, P. Pichler, C. Lehrer, Horst Zimmermann, Anton J. Bauer, Ingolf Rüge, K. Haberger, J. Lorenz and H.-G. Kranz. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Microelectronic Engineering, Journal of Applied Physics, Applied Physics A and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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