U. Schröder

9.9k citations

49 papers · 8.4k · 5 hit papers · h-index 30

Impact in

Electrical and Electronic Engineering top 0.2%
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
Materials Chemistry top 0.5%
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 48
- Semiconductor materials and devices 46
- Ferroelectric and Negative Capacitance Devices 34
- Advanced Memory and Neural Computing 6
- Advancements in Semiconductor Devices and Circuit Design 5
Materials Chemistry 31
- Ferroelectric and Piezoelectric Materials 15
- Electronic and Structural Properties of Oxides 13
- MXene and MAX Phase Materials 6

Co-authors: Johannes Müller (24 shared papers)T. S. Böscke (13 shared papers)U. Böttger (7 shared papers)D. Bräuhaus (7 shared papers)Thomas Mikolajick (23 shared papers)L. Frey (5 shared papers)Stefan Mueller (2 shared papers)Jonas Sundqvist (6 shared papers)
Journals: Applied Physics Letters (14 papers)Journal of Applied Physics (6 papers)Thin Solid Films (3 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2 papers)Microelectronic Engineering (2 papers)
Partner nations: Germany United States Estonia

In The Last Decade

U. Schröder

49 papers receiving 8.2k citations

U. Schröder's Hit Papers

5 papers align trajectories log scale

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories 2013 · 407 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2013 Fraunhofer-Publica (Fraunhofer-Gesellschaft)
2012 Nano Letters
2011 Applied Physics Letters
2011 Applied Physics Letters
2011 Journal of Applied Physics

Peers

Countries citing papers authored by U. Schröder

Since Specialization

Citations

This map shows the geographic impact of U. Schröder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Schröder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Schröder more than expected).

Fields of papers citing papers by U. Schröder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Schröder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Schröder. The network helps show where U. Schröder may publish in the future.

Co-authors

The 25 scholars most cited alongside U. Schröder, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. Schröder Line = papers co-authored together U. Schröder links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 49 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ferroelectricity in hafnium oxide thin films Applied Physics Letters ·T. S. Böscke, Johannes Müller, D. Bräuhaus, U. Schröder, U. Böttger Hit paper breakdown →	2011	2176
2	Ferroelectricity in Simple Binary ZrO₂ and HfO₂ Nano Letters ·Johannes Müller, T. S. Böscke, U. Schröder, Stefan Mueller, D. Bräuhaus, U. Böttger, L. Frey, Thomas Mikolajick Hit paper breakdown →	2012	1489
3	Ferroelectricity in yttrium-doped hafnium oxide Journal of Applied Physics ·Johannes Müller, U. Schröder, T. S. Böscke, Indra Müller, U. Böttger, L. Wilde, Jonas Sundqvist, M. Lemberger, P. Kücher, Thomas Mikolajick, L. Frey Hit paper breakdown →	2011	592
4	Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications Applied Physics Letters ·Johannes Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, Jonas Sundqvist, P. Kücher, Thomas Mikolajick, L. Frey Hit paper breakdown →	2011	507
5	Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Johannes Müller, T. S. Böscke, Stefan Müller, Ekaterina Yurchuk, P. Polakowski, (unknown), Dominik Martin, Tony Schenk, K. Khullar, Alfred Kersch, Wenke Weinreich, S. Riedel, Konrad Seidel, Amit Kumar, Thomas M. Arruda, Sergei V. Kalinin, T. Schlösser, Roman Boschke, Ralf van Bentum, U. Schröder, Thomas Mikolajick Hit paper breakdown →	2013	407
6	Wake-up effects in Si-doped hafnium oxide ferroelectric thin films Applied Physics Letters ·Dayu Zhou, Jin Xu, Qing Li, Yan Guan, Fei Cao, Xianlin Dong, Johannes Müller, Tony Schenk, U. Schröder	2013	350
7	Phase transitions in ferroelectric silicon doped hafnium oxide Applied Physics Letters ·T. S. Böscke, St. Teichert, D. Bräuhaus, Johannes Müller, U. Schröder, U. Böttger, Thomas Mikolajick	2011	327
8	Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·T. S. Böscke, Johannes Müller, D. Bräuhaus, U. Schröder, U. Böttger	2011	283
9	Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Johannes Müller, Ekaterina Yurchuk, T. Schlösser, (unknown), Raik Hoffmann, Stefan Müller, Dominik Martin, Stefan Slesazeck, P. Polakowski, Jonas Sundqvist, M. Czernohorsky, Konrad Seidel, P. Kücher, Roman Boschke, Martin Trentzsch, Klaus Gebauer, U. Schröder, Thomas Mikolajick	2012	245
10	Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films Thin Solid Films ·Ekaterina Yurchuk, Johannes Müller, Steve Knebel, Jonas Sundqvist, Andrew Graham, T. Melde, U. Schröder, Thomas Mikolajick	2012	165
11	Ferroelectricity in Si‐Doped HfO₂ Revealed: A Binary Lead‐Free Ferroelectric Advanced Materials ·Dominik Martin, Johannes Müller, Tony Schenk, Thomas M. Arruda, Amit Kumar, Evgheni Strelcov, Ekaterina Yurchuk, Stefan Müller, Darius Pohl, U. Schröder, Sergei V. Kalinin, Thomas Mikolajick	2014	156
12	Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$ IEEE Electron Device Letters ·Johannes Müller, T. S. Böscke, U. Schröder, Raik Hoffmann, Thomas Mikolajick, L. Frey	2012	156
13	Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties Applied Physics Letters ·Thomas Olsen, U. Schröder, Stefan Müller, Andreas Krause, Dominik Martin, Aarti Singh, Johannes Müller, Marion Geidel, Thomas Mikolajick	2012	153
14	From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices IEEE Transactions on Electron Devices ·Stefan Mueller, Johannes Müller, Raik Hoffmann, Ekaterina Yurchuk, T. Schlösser, Roman Boschke, Jan Paul, M. Goldbach, T. Herrmann, Alban Zaka, U. Schröder, Thomas Mikolajick	2013	122
15	Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Halid Mulaosmanovic, Stefan Slesazeck, J. Ocker, (unknown), Stefan Müller, S. Flachowsky, Johannes Müller, P. Polakowski, (unknown), Sören Jansen, Sabine Kolodinski, Claudia Richter, S. Piontek, Tony Schenk, Alfred Kersch, Christopher Künneth, Ralf van Bentum, U. Schröder, Thomas Mikolajick	2015	117
16	Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices Applied Physics Letters ·S. Govindarajan, T. S. Böscke, P. Sivasubramani, P. D. Kirsch, B. H. Lee, H.‐H. Tseng, R. Jammy, U. Schröder, Sivakumar Ramanathan, Bruce E. Gnade	2007	112
17	Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics Applied Physics Letters ·Michael Specht, M. Städele, S. Jakschik, U. Schröder	2004	106
18	Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films Applied Physics Letters ·Dayu Zhou, Johannes Müller, Jin Xu, Steve Knebel, D. Bräuhaus, U. Schröder	2012	64
19	Mechanical stress in ALD-Al2O3 films Applied Surface Science ·G. Krautheim, T. Hecht, S. Jakschik, U. Schröder, W. Zahn	2005	62
20	Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors Advances in science and technology ·Thomas Mikolajick, Stefan Müller, Tony Schenk, Ekaterina Yurchuk, Stefan Slesazeck, U. Schröder, S. Flachowsky, Ralf van Bentum, Sabine Kolodinski, P. Polakowski, Johannes Müller	2014	61

About U. Schröder

U. Schröder is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Civil and Structural Engineering, having authored 49 papers that have together received 8.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (46 papers), Ferroelectric and Negative Capacitance Devices (34 papers), Ferroelectric and Piezoelectric Materials (15 papers), Electronic and Structural Properties of Oxides (13 papers), Advanced Memory and Neural Computing (6 papers), MXene and MAX Phase Materials (6 papers), Copper Interconnects and Reliability (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (8.1k citations), Materials Chemistry (5.9k citations), Electronic, Optical and Magnetic Materials (313 citations), Biomedical Engineering (338 citations) and Mechanics of Materials (141 citations). U. Schröder has collaborated with scholars based in Germany, United States and Estonia. Frequent co-authors include Johannes Müller, T. S. Böscke, U. Böttger, D. Bräuhaus, Thomas Mikolajick, L. Frey, Stefan Mueller, Jonas Sundqvist, P. Kücher and Ekaterina Yurchuk. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Thin Solid Films, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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In The Last Decade

U. Schröder

U. Schröder's Hit Papers

Peers

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Fields of papers citing papers by U. Schröder

All Works

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