E. Amat

879 citations
66 papers · 679 · h-index 14

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Ferroelectric and Negative Capacitance Devices
    • Advanced Memory and Neural Computing
    • Microwave Engineering and Waveguides
    • Integrated Circuits and Semiconductor Failure Analysis

Papers in

    • Semiconductor materials and devices 51
    • Advancements in Semiconductor Devices and Circuit Design 48
    • Ferroelectric and Negative Capacitance Devices 22
    • Advanced Memory and Neural Computing 16
    • Integrated Circuits and Semiconductor Failure Analysis 10
    • Low-power high-performance VLSI design 7
    • Radiation Effects in Electronics 5

E. Amat

61 papers receiving 645 citations

Peers

E. Amat
Comparison fields: 5 of 40
  • Electrical and Electronic Engineering 620
  • Hardware and Architecture 39
  • Aerospace Engineering 136
  • Electronic, Optical and Magnetic Materials 91
  • Cellular and Molecular Neuroscience 47
Replace SangHoon Shin with:
SangHoon Shin United States
Chengying Chen China
K.G. McCarthy Ireland
Hyunchol Shin South Korea
Mohammad Azim Karami Iran
Rohit Sharma India
Xing Zhang China
Rajeev Dokania United States
Syed M. Alam United States
M. Kubo Japan
E. Amat relative to SangHoon Shin United States SangHoon Shin's profile →
Citations per field
00.5×
SangHoon Shin · 1×
Citations per year

Countries citing papers authored by E. Amat

Since Specialization
Citations

This map shows the geographic impact of E. Amat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Amat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Amat more than expected).

Fields of papers citing papers by E. Amat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Amat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Amat. The network helps show where E. Amat may publish in the future.

Co-authors

The 25 scholars most cited alongside E. Amat, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Amat Line = papers co-authored together E. Amat links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#Work
1 2005167
2 201441
3 200940
4 200939
5 201633
6 200928
7 201522
8 200918
9 200717
10 200917
11 201217
12 201616
13 201715
14 201013
15 201213
16 201411
17 201910
18 200810
19 201310
20 20159

About E. Amat

E. Amat is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Cellular and Molecular Neuroscience, Atomic and Molecular Physics, and Optics and Hardware and Architecture, having authored 66 papers that have together received 679 indexed citations. Recurring topics across this work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers), Ferroelectric and Negative Capacitance Devices (22 papers), Advanced Memory and Neural Computing (16 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Low-power high-performance VLSI design (7 papers), Neuroscience and Neural Engineering (6 papers) and Radiation Effects in Electronics (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (620 citations), Hardware and Architecture (39 citations), Aerospace Engineering (136 citations), Electronic, Optical and Magnetic Materials (91 citations) and Cellular and Molecular Neuroscience (47 citations). E. Amat has collaborated with scholars based in Spain, Belgium and France. Frequent co-authors include Antonio Rubio, M. Nafrı́a, X. Aymerich, R. Rodrı́guez, R. Degraeve, T. Kauerauf, G. Groeseneken, T. Lopetegi, M. A. G. Laso and R. Marqués. Their work appears in journals such as IEEE Transactions on Device and Materials Reliability, Microelectronic Engineering, IEEE Transactions on Electron Devices, Semiconductor Science and Technology and IEEE Transactions on Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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