D. Théron

2.4k citations

100 papers · 1.8k · h-index 23

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Mechanical and Optical Resonators

Papers in

Electrical and Electronic Engineering 89
- Semiconductor materials and devices 32
- Radio Frequency Integrated Circuit Design 24
- Advancements in Semiconductor Devices and Circuit Design 18
Atomic and Molecular Physics, and Optics 64
- Semiconductor Quantum Structures and Devices 37
- Mechanical and Optical Resonators 19
- Force Microscopy Techniques and Applications 14

Co-authors: Christophe Gaquière (39 shared papers)Y. Cordier (21 shared papers)M. Faucher (13 shared papers)Y. Crosnier (23 shared papers)L. Buchaillot (8 shared papers)Nicolas Clément (5 shared papers)D. Vuillaume (3 shared papers)Vikrant J. Gokhale (1 shared paper)
Journals: Electronics Letters (13 papers)IEEE Electron Device Letters (9 papers)Applied Physics Letters (7 papers)IEEE Transactions on Electron Devices (4 papers)Solid-State Electronics (4 papers)
Partner nations: France United States Germany

In The Last Decade

D. Théron

96 papers receiving 1.8k citations

Peers

Countries citing papers authored by D. Théron

Since Specialization

Citations

This map shows the geographic impact of D. Théron's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Théron with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Théron more than expected).

Fields of papers citing papers by D. Théron

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Théron. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Théron. The network helps show where D. Théron may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Théron, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Théron Line = papers co-authored together D. Théron links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 100 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Gallium Nitride as an Electromechanical Material Journal of Microelectromechanical Systems ·Mina Rais‐Zadeh, Vikrant J. Gokhale, Azadeh Ansari, M. Faucher, D. Théron, Y. Cordier, L. Buchaillot	2014	181
2	Current instabilities in GaN-based devices IEEE Electron Device Letters ·I. Daumiller, D. Théron, Christophe Gaquière, Andrei Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, Umesh K. Mishra, I. P. Smorchkova, S. Keller, C. Nguyen, E. Kohn	2001	127
3	AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources Journal of Applied Physics ·A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani, Taiichi Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, Christophe Gaquière, M. A. Poisson, S.L. Delage, P. Prystawko, C. Skierbiszewski	2010	111
4	Room-temperature terahertz emission from nanometer field-effect transistors Applied Physics Letters ·N. Dyakonova, A. El Fatimy, J. Lusakowskil, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Théron, A. Cappy	2006	95
5	A 17 GHz molecular rectifier Nature Communications ·Jorge Trasobares, D. Vuillaume, D. Théron, Nicolas Clément	2016	86
6	Terahertz detection by GaN/AlGaN transistors Electronics Letters ·A. El Fatimy, Stéphane Boubanga Tombet, F. Teppe, W. Knap, Dmitry Veksler, Sergey Rumyantsev, M. S. Shur, Nezih Pala, R. Gaška, Q. Fareed, X. Hu, D. Seliuta, Gintaras Valušis, Christophe Gaquière, D. Théron, A. Cappy	2006	73
7	InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage IEEE Electron Device Letters ·M. Zaknoune, Bruno Bonté, Christophe Gaquière, Y. Cordier, Y. Druelle, D. Théron, Y. Crosnier	1998	72
8	Surface potential of n- and p-type GaN measured by Kelvin force microscopy Applied Physics Letters ·S. Barbet, Raphaël Aubry, M.A. di Forte-Poisson, Jean-Claude Jacquet, D. Deresmes, Thierry Mélin, D. Théron	2008	69
9	Trap effects studies in GaN MESFETs by pulsed measurements Electronics Letters ·S. Trassaert, B. Boudart, Christophe Gaquière, D. Théron, Y. Crosnier, F. Huet, M.A. Poisson	1999	63
10	Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators Applied Physics Letters ·M. Faucher, B. Grimbert, Y. Cordier, Nicolas Baron, A. Wilk, H. Lahrèche, P. Bove, (unknown), Pascal Tilmant, Thomas Géhin, Christiane Legrand, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Théron	2009	48
11	12 GHz $F_{\rm MAX}$GaN/AlN/AlGaN Nanowire MISFET IEEE Electron Device Letters ·S. Vandenbrouck, K. Madjour, D. Théron, Yajie Dong, Yat Li, Charles M. Lieber, Christophe Gaquière	2009	48
12	Cross-talk artefacts in Kelvin probe force microscopy imaging: A comprehensive study Journal of Applied Physics ·S. Barbet, Michka Popoff, H. Diesinger, D. Deresmes, D. Théron, Thierry Mélin	2014	46
13	An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements Review of Scientific Instruments ·Thomas Dargent, Kamel Haddadi, T. Lasri, Nicolas Clément, D. Ducatteau, Bernard Legrand, Hassan Tanbakuchi, D. Théron	2013	43
14	Estimation of π–π Electronic Couplings from Current Measurements Nano Letters ·Jorge Trasobares, Jérôme Rech, Thibaut Jonckheere, Thierry Martin, Olivier Alévêque, Eric Levillain, Valentín Diez‐Cabanes, Yoann Olivier, J. Cornil, J. P. Nys, Ragavendran Sivakumarasamy, Kacem Smaali, Philippe Leclère, Akira Fujiwara, D. Théron, D. Vuillaume, Nicolas Clément	2017	39
15	Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN Journal of Electronic Materials ·B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Théron, Y. Crosnier, H. Lahrèche, F. Omnès	2000	36
16	AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz IEEE Electron Device Letters ·A. Minko, Virginie Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, Christophe Gaquière, D. Théron, J.C. De Jaeger, H. Lahrèche, L. Wedzikowski, R. Langer, P. Bove	2004	36
17	Field Effect Transistors for Terahertz Detection and Emission Journal of Infrared Millimeter and Terahertz Waves ·W. Knap, S. Nadar, H. Videlier, Stephane Boubanga-Tombet, Dominique Coquillat, Nina Dyakonova, F. Teppe, Kristoph Karpierz, J. Łusakowski, M. Sakowicz, Irmantas Kašalynas, D. Seliuta, Gintaras Valušis, Taiichi Otsuji, Yahya Moubarak Meziani, A. El Fatimy, S. Vandenbrouk, K. Madjour, D. Théron, Christophe Gaquière	2010	35
18	Measurement Techniques for RF Nanoelectronic Devices: New Equipment to Overcome the Problems of Impedance and Scale Mismatch IEEE Microwave Magazine ·H. Happy, Kamel Haddadi, D. Théron, T. Lasri, G. Dambrine	2014	34
19	High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology Beilstein Journal of Nanotechnology ·Jorge Trasobares, F. Vaurette, Marc François, Hans Romijn, Jean-Louis Codron, D. Vuillaume, D. Théron, Nicolas Clément	2014	26
20	The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter Solid-State Electronics ·S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, Virginie Hoel, Sylvie Lépilliet, D. Théron, A. Cappy	2000	26

About D. Théron

D. Théron is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics and Astronomy and Astrophysics, having authored 100 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (37 papers), Semiconductor materials and devices (32 papers), GaN-based semiconductor devices and materials (26 papers), Radio Frequency Integrated Circuit Design (24 papers), Mechanical and Optical Resonators (19 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Force Microscopy Techniques and Applications (14 papers) and Acoustic Wave Resonator Technologies (14 papers). The work is most often cited by research in Condensed Matter Physics (709 citations), Atomic and Molecular Physics, and Optics (892 citations), Electrical and Electronic Engineering (1.4k citations), Biomedical Engineering (571 citations) and Electronic, Optical and Magnetic Materials (184 citations). D. Théron has collaborated with scholars based in France, United States and Germany. Frequent co-authors include Christophe Gaquière, Y. Cordier, M. Faucher, Y. Crosnier, L. Buchaillot, Nicolas Clément, D. Vuillaume, Vikrant J. Gokhale, Mina Rais‐Zadeh and Azadeh Ansari. Their work appears in journals such as Electronics Letters, IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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