D. Ducatteau

1.1k citations

32 papers · 770 · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 29
- Radio Frequency Integrated Circuit Design 17
- Semiconductor materials and devices 11
- Photonic and Optical Devices 5
- Silicon Carbide Semiconductor Technologies 3
Condensed Matter Physics 17
- GaN-based semiconductor devices and materials 17

Co-authors: B. Grimbert (11 shared papers)Christophe Gaquière (14 shared papers)Farid Medjdoub (8 shared papers)E. Morvan (5 shared papers)S.L. Delage (3 shared papers)Michael J. Uren (1 shared paper)T. Martin (1 shared paper)R.S. Balmer (1 shared paper)
Journals: IEEE Electron Device Letters (8 papers)Microwave and Optical Technology Letters (2 papers)Applied Physics Express (2 papers)Solid-State Electronics (1 paper)Applied Physics Letters (1 paper)
Partner nations: France United States Germany

In The Last Decade

D. Ducatteau

31 papers receiving 751 citations

Peers

Countries citing papers authored by D. Ducatteau

Since Specialization

Citations

This map shows the geographic impact of D. Ducatteau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Ducatteau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Ducatteau more than expected).

Fields of papers citing papers by D. Ducatteau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Ducatteau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Ducatteau. The network helps show where D. Ducatteau may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Ducatteau, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Ducatteau Line = papers co-authored together D. Ducatteau links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 32 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Punch-through in short-channel AlGaN/GaN HFETs IEEE Transactions on Electron Devices ·Michael J. Uren, K. J. Nash, R.S. Balmer, T. Martin, E. Morvan, N. Caillas, S.L. Delage, D. Ducatteau, B. Grimbert, J.C. De Jaeger	2006	188
2	Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? HAL (Le Centre pour la Communication Scientifique Directe) ·Farid Medjdoub, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn	2006	142
3	Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate IEEE Electron Device Letters ·D. Ducatteau, A. Minko, Virginie Hoel, E. Morvan, E. Delos, B. Grimbert, H. Lahrèche, P. Bove, Christophe Gaquière, J.C. de Jaeger, S.L. Delage	2005	88
4	Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz IEEE Electron Device Letters ·A. Soltani, Jean-Claude Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, Magdalena Chmielowska, Mohammed Réda Ramdani, J.-C. De Jaeger	2013	46
5	An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements Review of Scientific Instruments ·Thomas Dargent, Kamel Haddadi, T. Lasri, Nicolas Clément, D. Ducatteau, Bernard Legrand, Hassan Tanbakuchi, D. Théron	2013	43
6	AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz IEEE Electron Device Letters ·A. Minko, Virginie Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, Christophe Gaquière, D. Théron, J.C. De Jaeger, H. Lahrèche, L. Wedzikowski, R. Langer, P. Bove	2004	36
7	Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices Applied Physics Express ·Farid Medjdoub, B. Grimbert, D. Ducatteau, Nathalie Rolland	2013	35
8	Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz IEEE Electron Device Letters ·Farid Medjdoub, Y. Tagro, M. Zegaoui, B. Grimbert, F. Danneville, D. Ducatteau, Nathalie Rolland, P.A. Rolland	2012	23
9	Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope Nanotechnology ·Fei Wang, Nicolas Clément, D. Ducatteau, David Troadec, Hassan Tanbakuchi, Bernard Legrand, G. Dambrine, D. Théron	2014	18
10	Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains Electronics Letters ·Farid Medjdoub, D. Ducatteau, Christophe Gaquière, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, E. Kohn	2007	17
11	A high-power W-band pseudomorphic InGaAs channel PHEMT IEEE Electron Device Letters ·Christophe Gaquière, Jan Grünenpütt, D. Jambon, E. Delos, D. Ducatteau, M. Werquin, D. Théron, P. Fellon	2005	15
12	First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology Microwave and Optical Technology Letters ·M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marianne Germain, J.C. De Jaeger, Christophe Gaquière	2005	14
13	First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications IEEE Transactions on Device and Materials Reliability ·Gaudenzio Meneghesso, Matteo Meneghini, Farid Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, Nathalie Rolland, Riccardo Silvestri, Enrico Zanoni	2013	14
14	Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps Solid-State Electronics ·Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, M. Germain	2005	13
15	High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band IEEE Electron Device Letters ·A. Pottrain, Thomas Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière	2012	11
16	InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate IEEE Electron Device Letters ·Arame Thiam, Yannick Roelens, Christophe Coinon, Vanessa Avramovic, B. Grandchamp, D. Ducatteau, X. Wallart, Cristell Maneux, M. Zaknoune	2014	10
17	Radiation Pattern Measurements of an Integrated Transverse Electromagnetic Horn Antenna Using a Terahertz Photomixing Setup IEEE Microwave and Wireless Components Letters ·L. Prissette, G. Ducournau, Tahsin Akalin, E. Peytavit, Alexandre Beck, M. Zaknoune, D. Ducatteau, Jean‐François Lampin	2010	8
18	Detecting response of microelectromechanical resonators by microwave reflectometry Applied Physics Letters ·Bernard Legrand, D. Ducatteau, D. Théron, Benjamin Walter, Hassan Tanbakuchi	2013	7
19	LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices Journal of Crystal Growth ·M.A. Poisson, M. Magis, M. Tordjman, R. Aubry, N. Sarazin, M. Peschang, E. Morvan, S.L. Delage, J. Di Persio, Raymond Quéré, B. Grimbert, Virginie Hoel, E. Delos, D. Ducatteau, Christophe Gaquière	2004	7
20	High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate Microwave and Optical Technology Letters ·M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, Raphaël Aubry, Christophe Gaquière	2006	5

About D. Ducatteau

D. Ducatteau is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 32 papers that have together received 770 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), Radio Frequency Integrated Circuit Design (17 papers), Semiconductor materials and devices (11 papers), Semiconductor Quantum Structures and Devices (6 papers), Photonic and Optical Devices (5 papers), Ga2O3 and related materials (4 papers), Superconducting and THz Device Technology (3 papers) and Silicon Carbide Semiconductor Technologies (3 papers). The work is most often cited by research in Condensed Matter Physics (631 citations), Electronic, Optical and Magnetic Materials (266 citations), Electrical and Electronic Engineering (574 citations), Atomic and Molecular Physics, and Optics (220 citations) and Biomedical Engineering (126 citations). D. Ducatteau has collaborated with scholars based in France, United States and Germany. Frequent co-authors include B. Grimbert, Christophe Gaquière, Farid Medjdoub, E. Morvan, S.L. Delage, Michael J. Uren, T. Martin, R.S. Balmer, K. J. Nash and N. Grandjean. Their work appears in journals such as IEEE Electron Device Letters, Microwave and Optical Technology Letters, Applied Physics Express, Solid-State Electronics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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