B. Grimbert

1.2k citations

53 papers · 1.0k · h-index 17

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 38
- GaN-based semiconductor devices and materials 38
Electrical and Electronic Engineering 47
- Radio Frequency Integrated Circuit Design 22
- Semiconductor materials and devices 18
- Silicon Carbide Semiconductor Technologies 5

Co-authors: Farid Medjdoub (14 shared papers)Damien Ducatteau (15 shared papers)Nathalie Rolland (10 shared papers)Christophe Gaquière (20 shared papers)E. Morvan (13 shared papers)Malek Zegaoui (8 shared papers)S.L. Delage (7 shared papers)P.A. Rolland (6 shared papers)
Journals: IEEE Electron Device Letters (5 papers)Applied Physics Express (5 papers)Electronics Letters (3 papers)Microelectronic Engineering (2 papers)Applied Physics Letters (2 papers)
Partner nations: France Italy United Kingdom

In The Last Decade

B. Grimbert

52 papers receiving 1.0k citations

Peers

Countries citing papers authored by B. Grimbert

Since Specialization

Citations

This map shows the geographic impact of B. Grimbert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Grimbert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Grimbert more than expected).

Fields of papers citing papers by B. Grimbert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Grimbert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Grimbert. The network helps show where B. Grimbert may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Grimbert, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Grimbert Line = papers co-authored together B. Grimbert links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 53 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Punch-through in short-channel AlGaN/GaN HFETs IEEE Transactions on Electron Devices ·Michael J. Uren, K. J. Nash, R.S. Balmer, Tomas Martin, E. Morvan, N. Caillas, S.L. Delage, Damien Ducatteau	2006	196
2	Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate IEEE Electron Device Letters ·Damien Ducatteau, A. Minko, Virginie Hoel, E. Morvan, E. Delos, B. Grimbert, H. Lahrèche, P. Bove	2005	98
3	First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz IEEE Electron Device Letters ·Farid Medjdoub, Malek Zegaoui, B. Grimbert, D. Ducatteau, Nathalie Rolland, P.A. Rolland	2012	73
4	Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors Applied Physics Express ·Farid Medjdoub, Malek Zegaoui, B. Grimbert, Nathalie Rolland, P.A. Rolland	2011	62
5	Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels Journal of Applied Physics ·Paul Sangaré, Guillaume Ducournau, B. Grimbert, Virginie Brändli, Marc Faucher, Christophe Gaquière, A. Íñiguez-de-la-Torre, Ignacio Iniguez-de-la-Torre	2013	59
6	Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators Applied Physics Letters ·Marc Faucher, B. Grimbert, Yvon Cordier, Nicolas Baron, A. Wilk, H. Lahrèche, P. Bove, Pascal Tilmant	2009	51
7	AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz IEEE Electron Device Letters ·A. Minko, Virginie Hoel, E. Morvan, B. Grimbert, Ali Soltani, E. Delos, Damien Ducatteau, Christophe Gaquière	2004	41
8	Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices Applied Physics Express ·Farid Medjdoub, B. Grimbert, Damien Ducatteau, Nathalie Rolland	2013	40
9	Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS Semiconductors ·Malek GASSOUMI, B. Grimbert, Christophe Gaquière, Hichem Maaref	2012	35
10	Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate IEEE Electron Device Letters ·Farid Medjdoub, N. Waldhoff, Malek Zegaoui, B. Grimbert, Nathalie Rolland, P.A. Rolland	2011	32
11	Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz IEEE Electron Device Letters ·Farid Medjdoub, Yoann Tagro, M. Zegaoui, B. Grimbert, F. Danneville, Damien Ducatteau, Nathalie Rolland, P.A. Rolland	2012	26
12	High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure Applied Physics Express ·Farid Medjdoub, Riad Kabouche, Astrid Linge, B. Grimbert, Malek Zegaoui, Piero Gamarra, C. Lacam, M. Tordjman	2015	24
13	Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers AMS Acta (University of Bologna) ·Jean-Claude de Jaeger, S.L. Delage, G. Dambrine, M.A. Poisson, Virginie Hoel, Sylvie Lépilliet, B. Grimbert, E. Morvan	2005	23
14	The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates Microelectronic Engineering ·Malek GASSOUMI, Mohamed Mongi Ben Salem, Salah Saadaoui, B. Grimbert, Jol Fontaine, Christophe Gaquière, Hichem Maaref	2010	22
15	GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV Electronics Letters ·Nicolas Herbecq, Isabelle Roch‐Jeune, Astrid Linge, B. Grimbert, Malek Zegaoui, Farid Medjdoub	2015	21
16	Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design LillOA (Université de Lille (University Of Lille)) ·Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, L. Bary, J. Rayssac, E. Morvan, B. Grimbert, S.L. Delage, J.C. de Jaeger	2006	21
17	Well Integrity Management System (WIMS)—A Systematic Way of Describing the Actual and Historic Integrity Status of Operational Wells SPE Annual Technical Conference and Exhibition ·Kjell Corneliussen, Folke Sorli, H. Brandanger Haga, Eli Tenold, C. Menezes, B. Grimbert, Kjell Owren	2007	18
18	Fighting Lead and Zinc Sulphide Scales on a North Sea HP/HT Field Karine Orski, B. Grimbert, C. Menezes, Eddie Quin	2007	17
19	First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications IEEE Transactions on Device and Materials Reliability ·Gaudenzio Meneghesso, Matteo Meneghini, Farid Medjdoub, Yoann Tagro, B. Grimbert, Damien Ducatteau, Nathalie Rolland, Riccardo Silvestri	2013	16
20	Photonic band gap material for integrated photonic application: technological challenges Microelectronic Engineering ·Marc François, J. Danglot, B. Grimbert, Patrick Mounaix, Martin J. Muller, O. Vanbésien, D. Lippens	2002	15

About B. Grimbert

B. Grimbert is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 53 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (38 papers), Radio Frequency Integrated Circuit Design (22 papers), Semiconductor materials and devices (18 papers), Semiconductor Quantum Structures and Devices (13 papers), Ga2O3 and related materials (7 papers), Mechanical and Optical Resonators (6 papers), Acoustic Wave Resonator Technologies (6 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (853 citations), Electronic, Optical and Magnetic Materials (314 citations), Electrical and Electronic Engineering (794 citations), Atomic and Molecular Physics, and Optics (345 citations) and Biomedical Engineering (140 citations). B. Grimbert has collaborated with scholars based in France, Italy and United Kingdom. Frequent co-authors include Farid Medjdoub, Damien Ducatteau, Nathalie Rolland, Christophe Gaquière, E. Morvan, Malek Zegaoui, S.L. Delage, P.A. Rolland, K. J. Nash and Tomas Martin. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Express, Electronics Letters, Microelectronic Engineering and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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