S. Bollaert

2.5k citations

100 papers · 1.8k · h-index 22

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 2%
- Terahertz technology and applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design

Papers in

Electrical and Electronic Engineering 93
- Semiconductor materials and devices 50
- Advancements in Semiconductor Devices and Circuit Design 49
- Radio Frequency Integrated Circuit Design 22
- Terahertz technology and applications 14
- Integrated Circuits and Semiconductor Failure Analysis 9
Atomic and Molecular Physics, and Optics 72
- Semiconductor Quantum Structures and Devices 65
- Quantum and electron transport phenomena 17

Co-authors: A. Cappy (48 shared papers)W. Knap (13 shared papers)T. Parenty (7 shared papers)M. S. Shur (4 shared papers)D. Pardo (12 shared papers)J. Mateos (20 shared papers)Yannick Roelens (19 shared papers)N. Dyakonova (7 shared papers)
Journals: Applied Physics Letters (13 papers)IEEE Transactions on Electron Devices (9 papers)IEEE Electron Device Letters (6 papers)Journal of Applied Physics (5 papers)Solid-State Electronics (5 papers)
Partner nations: France Spain Belgium

In The Last Decade

S. Bollaert

97 papers receiving 1.8k citations

Peers

Countries citing papers authored by S. Bollaert

Since Specialization

Citations

This map shows the geographic impact of S. Bollaert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Bollaert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Bollaert more than expected).

Fields of papers citing papers by S. Bollaert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Bollaert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Bollaert. The network helps show where S. Bollaert may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Bollaert, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Bollaert Line = papers co-authored together S. Bollaert links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 100 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors Applied Physics Letters ·W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, M. S. Shur	2004	246
2	Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors Applied Physics Letters ·A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, Gintaras Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, Sergey Rumyantsev	2006	165
3	Room-temperature terahertz emission from nanometer field-effect transistors Applied Physics Letters ·N. Dyakonova, A. El Fatimy, J. Lusakowskil, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Théron, A. Cappy	2006	101
4	Ballistic nanodevices for terahertz data processing: Monte Carlo simulations Nanotechnology ·J. Mateos, B. G. Vasallo, D. Pardo, T Gonz lez, J.S. Galloo, Y Roelens, S. Bollaert, A. Cappy	2003	73
5	Microscopic modeling of nonlinear transport in ballistic nanodevices IEEE Transactions on Electron Devices ·J. Mateos, B. G. Vasallo, D. Pardo, T. González, J.S. Galloo, S. Bollaert, Y. Roelens, A. Cappy	2003	70
6	Imaging and controlling electron transport inside a quantum ring Nature Physics ·B. Hackens, Frederico Martins, T. Ouisse, H. Sellier, S. Bollaert, X. Wallart, A. Cappy, Joël Chevrier, V. Bayot, S. Huant	2006	64
7	Imaging Electron Wave Functions Inside Open Quantum Rings Physical Review Letters ·Frederico Martins, B. Hackens, Marco Pala, T. Ouisse, H. Sellier, X. Wallart, S. Bollaert, A. Cappy, Joël Chevrier, V. Bayot, S. Huant	2007	60
8	Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors Journal of Applied Physics ·N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. E. Levinshteĭn, А. П. Дмитриев, M. S. Shur, S. Bollaert, A. Cappy	2005	59
9	Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations Semiconductor Science and Technology ·I. Íñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy	2007	53
10	Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors Applied Physics Letters ·F. Teppe, M. L. Orlov, A. El Fatimy, Antoine Tiberj, W. Knap, J. Torres, V. I. Gavrilenko, A. Shchepetov, Yannick Roelens, S. Bollaert	2006	48
11	Oblique modes effect on terahertz plasma wave resonant detection in InGaAs∕InAlAs multichannel transistors Applied Physics Letters ·A. Shchepetov, C. Gardès, Yannick Roelens, A. Cappy, S. Bollaert, Stéphane Boubanga Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, D. Seliuta, R. Vadoklis, Gintaras Valušis	2008	47
12	Nonlinear Effects in T-Branch Junctions IEEE Electron Device Letters ·J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy	2004	44
13	Dwell-Time-Limited Coherence in Open Quantum Dots Physical Review Letters ·B. Hackens, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot	2005	43
14	Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov–Shur instability Applied Physics Letters ·Stéphane Boubanga Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, A. Shchepetov, C. Gardès, Y. Roelens, S. Bollaert, D. Seliuta, R. Vadoklis, Gintaras Valušis	2008	41
15	Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrate IEEE Electron Device Letters ·S. Bollaert, Y. Cordier, Virginie Hoel, M. Zaknoune, H. Happy, Sylvie Lépilliet, A. Cappy	1999	39
16	InAlAs–InGaAs Double-Gate HEMTs on Transferred Substrate IEEE Electron Device Letters ·Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy	2004	37
17	Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications IEEE Transactions on Microwave Theory and Techniques ·Mikael Malmkvist, Éric Lefebvre, Malin Borg, L. Desplanque, X. Wallart, G. Dambrine, S. Bollaert, Jan Grahn	2008	31
18	InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance Japanese Journal of Applied Physics ·Y. Cordier, S. Bollaert, M. Zaknoune, J. Dipersio, Denise Ferré	1999	29
19	The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter Solid-State Electronics ·S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, Virginie Hoel, Sylvie Lépilliet, D. Théron, A. Cappy	2000	28
20	Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices Physical Review B ·C. A. Marlow, R. P. Taylor, T. P. Martin, B. C. Scannell, Heiner Linke, M. S. Fairbanks, G. D. R. Hall, Ivan Shorubalko, Lars Samuelson, T. M. Fromhold, C. V. Brown, B. Hackens, S. Faniel, C. Gustin, Vincent Bayot, X. Wallart, S. Bollaert, A. Cappy	2006	26

About S. Bollaert

S. Bollaert is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Astronomy and Astrophysics and Biomedical Engineering, having authored 100 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (65 papers), Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers), Radio Frequency Integrated Circuit Design (22 papers), Quantum and electron transport phenomena (17 papers), Terahertz technology and applications (14 papers), GaN-based semiconductor devices and materials (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.3k citations), Electrical and Electronic Engineering (1.6k citations), Condensed Matter Physics (261 citations), Astronomy and Astrophysics (360 citations) and Biomedical Engineering (284 citations). S. Bollaert has collaborated with scholars based in France, Spain and Belgium. Frequent co-authors include A. Cappy, W. Knap, T. Parenty, M. S. Shur, D. Pardo, J. Mateos, Yannick Roelens, N. Dyakonova, V. V. Popov and A. Shchepetov. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Journal of Applied Physics and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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