S.L. Delage

3.8k citations
161 papers · 2.8k · h-index 27

Impact in

Papers in

    • Semiconductor materials and devices 67
    • Radio Frequency Integrated Circuit Design 60
    • Advancements in Semiconductor Devices and Circuit Design 21
    • Silicon Carbide Semiconductor Technologies 20
    • GaN-based semiconductor devices and materials 100

S.L. Delage

160 papers receiving 2.6k citations

Peers

S.L. Delage
Comparison fields: 5 of 56
  • Condensed Matter Physics 1.3k
  • Atomic and Molecular Physics, and Optics 1.2k
  • Electrical and Electronic Engineering 2.2k
  • Electronic, Optical and Magnetic Materials 428
  • Materials Chemistry 557
Replace A. Ougazzaden with:
A. Ougazzaden France
J. A. Edmond United States
R. Beresford United States
B. El Jani Tunisia
Maarten Leys Belgium
Stefan Degroote Belgium
B. J. Skromme United States
Shigetaka Tomiya Japan
E. Kamińska Poland
S. J. Rosner United States
S.L. Delage relative to A. Ougazzaden France A. Ougazzaden's profile →
Citations per field
00.5×1.5×
A. Ougazzaden · 1×
Citations per year

Countries citing papers authored by S.L. Delage

Since Specialization
Citations

This map shows the geographic impact of S.L. Delage's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.L. Delage with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.L. Delage more than expected).

Fields of papers citing papers by S.L. Delage

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.L. Delage. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.L. Delage. The network helps show where S.L. Delage may publish in the future.

Co-authors

The 25 scholars most cited alongside S.L. Delage, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.L. Delage Line = papers co-authored together S.L. Delage links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 161 papers — load more, or switch the sort, to bring in the rest.

#Work
1 1988217
2 2006184
3 1984115
4 2010113
5 2009104
6 201291
7 200588
8 201874
9 198958
10 201157
11 199056
12 200755
13 198655
14 198853
15 198550
16 201649
17 201849
18 199144
19 201042
20 198942

About S.L. Delage

S.L. Delage is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 161 papers that have together received 2.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (100 papers), Semiconductor materials and devices (67 papers), Radio Frequency Integrated Circuit Design (60 papers), Semiconductor Quantum Structures and Devices (57 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and interfaces (20 papers), Silicon Carbide Semiconductor Technologies (20 papers) and Metal and Thin Film Mechanics (19 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Atomic and Molecular Physics, and Optics (1.2k citations), Electrical and Electronic Engineering (2.2k citations), Electronic, Optical and Magnetic Materials (428 citations) and Materials Chemistry (557 citations). S.L. Delage has collaborated with scholars based in France, Germany and Slovakia. Frequent co-authors include Subramanian S. Iyer, F. Arnaud d’Avitaya, E. Rosencher, E. Morvan, G.L. Patton, Ο. Thomas, F. M. d’Heurle, Christophe Gaquière, S. Tiwari and J.M.C. Stork. Their work appears in journals such as Electronics Letters, Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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