C.S. Rafferty

3.0k citations
80 papers · 2.1k · 1 hit paper · h-index 23

Impact in

Papers in

C.S. Rafferty

73 papers receiving 1.9k citations

C.S. Rafferty's Hit Papers

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 · 499 citations
4990+9+19Years since publication100200300400

Peers

C.S. Rafferty
Comparison fields: 5 of 58
  • Electrical and Electronic Engineering 1.9k
  • Atomic and Molecular Physics, and Optics 903
  • Computational Mechanics 515
  • Structural Biology 14
  • Materials Chemistry 304
Replace P. Fahey with:
P. Fahey United States
H.-J. Gossmann United States
M. Bruel France
K.K. Bourdelle France
A. E. Michel United States
D.P. Brunco Belgium
G. H. Schwuttke United States
M. Y. Tsai United States
C. A. King United States
P. M. L. O. Scholte Netherlands
C.S. Rafferty relative to P. Fahey United States P. Fahey's profile →
Citations per field
00.5×1.5×2.3×
P. Fahey · 1×
Citations per year

Countries citing papers authored by C.S. Rafferty

Since Specialization
Citations

This map shows the geographic impact of C.S. Rafferty's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.S. Rafferty with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.S. Rafferty more than expected).

Fields of papers citing papers by C.S. Rafferty

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.S. Rafferty. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.S. Rafferty. The network helps show where C.S. Rafferty may publish in the future.

Co-authors

The 25 scholars most cited alongside C.S. Rafferty, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C.S. Rafferty Line = papers co-authored together C.S. Rafferty links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 80 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Hit paper breakdown →
1997499
2 1997178
3 1999123
4 1996121
5 199574
6 199367
7 198553
8 199951
9 199842
10 199636
11 199636
12 198935
13 200033
14 198532
15 199331
16 200029
17 199128
18 198925
19 198924
20 199523

About C.S. Rafferty

C.S. Rafferty is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Materials Chemistry and Mechanical Engineering, having authored 80 papers that have together received 2.1k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (46 papers), Semiconductor materials and devices (37 papers), Integrated Circuits and Semiconductor Failure Analysis (27 papers), Semiconductor materials and interfaces (26 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers), Ion-surface interactions and analysis (14 papers), Silicon Carbide Semiconductor Technologies (8 papers) and Silicon Nanostructures and Photoluminescence (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.9k citations), Atomic and Molecular Physics, and Optics (903 citations), Computational Mechanics (515 citations), Structural Biology (14 citations) and Materials Chemistry (304 citations). C.S. Rafferty has collaborated with scholars based in United States, Spain and Germany. Frequent co-authors include George H. Gilmer, M. Jaraı́z, H.‐J. Gossmann, D. J. Eaglesham, J. M. Poate, H. S. Luftman, R.W. Dutton, Lourdes Pelaz, H.-J. Gossmann and D. C. Jacobson. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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