C.S. Rafferty
Impact in
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- Semiconductor materials and interfaces
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- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
Papers in
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- Semiconductor materials and devices 49
- Advancements in Semiconductor Devices and Circuit Design 42
- Silicon and Solar Cell Technologies 17
- Low-power high-performance VLSI design 4
- CCD and CMOS Imaging Sensors 4
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- Semiconductor materials and interfaces 41
- Co-authors
- H. -J. L. Gossmann (30 shared papers)George H. Gilmer (14 shared papers)Martín Jaraíz (11 shared papers)David J Eaglesham (9 shared papers)John M. Poate (10 shared papers)R.W. Dutton (13 shared papers)Henry S. Luftman (10 shared papers)Lourdes Pelaz (14 shared papers)
- Journals
- Applied Physics Letters (23 papers)Journal of Applied Physics (5 papers)IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (4 papers)Journal of The Electrochemical Society (2 papers)
- Partner nations
- United StatesFranceSpain
In The Last Decade
C.S. Rafferty
101 papers receiving 2.4k citations
C.S. Rafferty's Hit Papers
Peers
Comparison fields: 5 of 81
- Atomic and Molecular Physics, and Optics 1.3k
- Electrical and Electronic Engineering 2.1k
- Computational Mechanics 584
- Computer Graphics and Computer-Aided Design 84
- Structural Biology 19
Countries citing papers authored by C.S. Rafferty
This map shows the geographic impact of C.S. Rafferty's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.S. Rafferty with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.S. Rafferty more than expected).
Fields of papers citing papers by C.S. Rafferty
This network shows the impact of papers produced by C.S. Rafferty. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.S. Rafferty. The network helps show where C.S. Rafferty may publish in the future.
Co-authors
The 25 scholars most cited alongside C.S. Rafferty, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 108 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon Hit paper breakdown → | 1997 | 516 |
| 2 | 1997 | 186 | |
| 3 | 1999 | 131 | |
| 4 | 1996 | 125 | |
| 5 | 1988 | 96 | |
| 6 | 1995 | 78 | |
| 7 | 1993 | 74 | |
| 8 | 1998 | 64 | |
| 9 | 1985 | 59 | |
| 10 | 2003 | 54 | |
| 11 | 1999 | 52 | |
| 12 | 1998 | 47 | |
| 13 | 1989 | 42 | |
| 14 | 1996 | 36 | |
| 15 | 1996 | 35 | |
| 16 | 1985 | 33 | |
| 17 | 1993 | 32 | |
| 18 | 2000 | 32 | |
| 19 | 2021 | 32 | |
| 20 | 1991 | 30 |
About C.S. Rafferty
C.S. Rafferty is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Materials Chemistry and Numerical Analysis, having authored 108 papers that have together received 2.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Semiconductor materials and interfaces (41 papers), Silicon and Solar Cell Technologies (17 papers), Ion-surface interactions and analysis (10 papers), Fusion materials and technologies (8 papers), Low-power high-performance VLSI design (4 papers) and CCD and CMOS Imaging Sensors (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.3k citations), Electrical and Electronic Engineering (2.1k citations), Computational Mechanics (584 citations), Computer Graphics and Computer-Aided Design (84 citations) and Structural Biology (19 citations). C.S. Rafferty has collaborated with scholars based in United States, France and Spain. Frequent co-authors include H. -J. L. Gossmann, George H. Gilmer, Martín Jaraíz, David J Eaglesham, John M. Poate, R.W. Dutton, Henry S. Luftman, Lourdes Pelaz, Dale C. Jacobson and Mark R. Pinto. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Journal of The Electrochemical Society.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.