J. C. Bean

5.2k citations

67 papers · 4.0k · 2 hit papers · h-index 27

Impact in

Structural Biology top 2%
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 46
- Semiconductor materials and devices 15
- Silicon and Solar Cell Technologies 13
- Photonic and Optical Devices 12
- Thin-Film Transistor Technologies 11
Atomic and Molecular Physics, and Optics 38
- Semiconductor Quantum Structures and Devices 21
- Semiconductor materials and interfaces 20
- Surface and Thin Film Phenomena 8

Co-authors: R. People (8 shared papers)R. Hull (16 shared papers)A. T. Fiory (4 shared papers)D. V. Lang (7 shared papers)A. M. Sergent (2 shared papers)L. C. Feldman (4 shared papers)R. T. Lynch (2 shared papers)J. M. Gibson (5 shared papers)
Journals: Applied Physics Letters (20 papers)Journal of Applied Physics (6 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (6 papers)Physical review. B, Condensed matter (5 papers)Surface Science (4 papers)
Partner nations: United States Germany South Africa

In The Last Decade

J. C. Bean

64 papers receiving 3.8k citations

J. C. Bean's Hit Papers

align trajectories log scale

Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures 1985 · 1.4k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1985 Applied Physics Letters
1984 Applied Physics Letters

Peers

Countries citing papers authored by J. C. Bean

Since Specialization

Citations

This map shows the geographic impact of J. C. Bean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Bean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Bean more than expected).

Fields of papers citing papers by J. C. Bean

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Bean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Bean. The network helps show where J. C. Bean may publish in the future.

Co-authors

The 25 scholars most cited alongside J. C. Bean, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. C. Bean Line = papers co-authored together J. C. Bean links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 67 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures Applied Physics Letters ·R. People, J. C. Bean Hit paper breakdown →	1985	1377
2	Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substrates Applied Physics Letters ·R. People, J. C. Bean	1986	248
3	Modulation doping in GexSi1−x/Si strained layer heterostructures Applied Physics Letters ·R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Störmer, K. W. Wecht, R. T. Lynch, K. W. Baldwin Hit paper breakdown →	1984	243
4	Measurement of the band gap of GexSi1−x/Si strained-layer heterostructures Applied Physics Letters ·D. V. Lang, R. People, J. C. Bean, A. M. Sergent	1985	236
5	Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy Applied Physics Letters ·J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, R. T. Lynch	1984	170
6	Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon Journal of Applied Physics ·J. C. Bean, G. E. Becker, P. M. Petroff, T. E. Seidel	1977	144
7	Dislocation nucleation near the critical thickness in GeSi/Si strained layers Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·D. J. Eaglesham, E. P. Kvam, D. M. Maher, C. J. Humphreys, J. C. Bean	1989	125
8	Stability of semiconductor strained-layer superlattices Applied Physics Letters ·R. Hull, J. C. Bean, F. Cerdeira, A. T. Fiory, J. M. Gibson	1986	120
9	Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100) Journal of Applied Physics ·A. T. Fiory, J. C. Bean, L. C. Feldman, Ian Robinson	1984	120
10	Direct observation of potential distribution across Si/Si p-n junctions using off-axis electron holography Applied Physics Letters ·Martha R. McCartney, David J. Smith, R. Hull, J. C. Bean, Edgar Voelkl, B.G. Frost	1994	100
11	Electronic structure of Ge/Si monolayer strained-layer superlattices Physical review. B, Condensed matter ·T. P. Pearsall, J. Bevk, J. C. Bean, J. M. Bonar, J. P. Mannáerts, A. Ourmazd	1989	85
12	Thermal relaxation of metastable strained-layerGexSi1−x/Si epitaxy Physical review. B, Condensed matter ·A. T. Fiory, J. C. Bean, R. Hull, S. Nakahara	1985	79
13	Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements Applied Physics Letters ·J. C. Bean, J. M. Poate	1980	70
14	An efficient method for cleaning Ge(100) surface Surface Science ·K. Prabhakarana, T. Ogino, R. Hull, J. C. Bean, L. J. Peticolas	1994	70
15	Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys Surface Science ·H.‐J. Gossmann, J. C. Bean, L. C. Feldman, W. M. Gibson	1984	63
16	Self-organized nanostructures in Si 1-x Ge x films on Si(001) Applied Physics A ·Christian Teichert, J. C. Bean, M. G. Lagally	1998	60
17	Elastic relaxation in transmission electron microscopy of strained-layer superlattices Applied Physics Letters ·J. M. Gibson, R. Hull, J. C. Bean, M.M.J. Treacy	1985	58
18	Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained-layer infrared photodetector operating between 20 and 77 K Applied Physics Letters ·R. People, J. C. Bean, C. G. Bethea, S. K. Sputz, L. J. Peticolas	1992	57
19	Hydrogen surface coverage: Raising the silicon epitaxial growth temperature Applied Physics Letters ·Stefan Wolff, S. Wagner, J. C. Bean, R. Hull, J. M. Gibson	1989	50
20	Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substrates Journal of Applied Physics ·R. Hull, J. C. Bean, R. E. Leibenguth, D. J. Werder	1989	49

About J. C. Bean

J. C. Bean is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Surfaces, Coatings and Films, having authored 67 papers that have together received 4.0k indexed citations. Recurring topics across this work include Silicon Nanostructures and Photoluminescence (26 papers), Semiconductor Quantum Structures and Devices (21 papers), Semiconductor materials and interfaces (20 papers), Semiconductor materials and devices (15 papers), Silicon and Solar Cell Technologies (13 papers), Photonic and Optical Devices (12 papers), Thin-Film Transistor Technologies (11 papers) and Surface and Thin Film Phenomena (8 papers). The work is most often cited by research in Structural Biology (121 citations), Atomic and Molecular Physics, and Optics (2.5k citations), Electrical and Electronic Engineering (3.1k citations), Surfaces, Coatings and Films (245 citations) and Materials Chemistry (1.5k citations). J. C. Bean has collaborated with scholars based in United States, Germany and South Africa. Frequent co-authors include R. People, R. Hull, A. T. Fiory, D. V. Lang, A. M. Sergent, L. C. Feldman, R. T. Lynch, J. M. Gibson, J. M. Poate and P. M. Petroff. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Physical review. B, Condensed matter and Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J. C. Bean's Hit Papers

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