John Borland

665 citations
72 papers · 525 · h-index 9

Impact in

    • Semiconductor materials and devices
    • Integrated Circuits and Semiconductor Failure Analysis
    • Silicon and Solar Cell Technologies
    • Advancements in Semiconductor Devices and Circuit Design
    • Thin-Film Transistor Technologies

Papers in

John Borland

57 papers receiving 467 citations

Peers

John Borland
Comparison fields: 5 of 39
  • Electrical and Electronic Engineering 391
  • Structural Biology 9
  • Computational Mechanics 130
  • Mechanics of Materials 91
  • Materials Chemistry 159
Replace René Feder with:
René Feder Germany
Brian R. Tull United States
Y. Ohmura Japan
Erik Thelander Germany
Lachlan Smillie Australia
W. Lerch Germany
D. Chidambarrao United States
A.M. Papon France
Marek E. Schmidt Japan
C.C.G. Visser Netherlands
John Borland relative to René Feder Germany René Feder's profile →
Citations per field
00.5×1.5×2.3×
René Feder · 1×
Citations per year

Countries citing papers authored by John Borland

Since Specialization
Citations

This map shows the geographic impact of John Borland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Borland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Borland more than expected).

Fields of papers citing papers by John Borland

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Borland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Borland. The network helps show where John Borland may publish in the future.

Co-authors

The 25 scholars most cited alongside John Borland, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with John Borland Line = papers co-authored together John Borland links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 72 papers — load more, or switch the sort, to bring in the rest.

#Work
1 1997231
2 199375
3 200216
4 200914
5 199112
6 198310
7 20059
8 19879
9
Reaction kinetics of SiO 2 /Si(100) interface in H 2 ambient in a reduced pressure epitaxial reactor.
19878
10 19907
11 20067
12 20026
13 20185
14 20204
15 20044
16 20074
17 20194
18 19914
19 20184
20 20024

About John Borland

John Borland is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Computational Mechanics, having authored 72 papers that have together received 525 indexed citations. Recurring topics across this work include Semiconductor materials and devices (36 papers), Silicon and Solar Cell Technologies (33 papers), Integrated Circuits and Semiconductor Failure Analysis (27 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and interfaces (12 papers), Thin-Film Transistor Technologies (11 papers), Advanced Surface Polishing Techniques (6 papers) and Ion-surface interactions and analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (391 citations), Structural Biology (9 citations), Computational Mechanics (130 citations), Mechanics of Materials (91 citations) and Materials Chemistry (159 citations). John Borland has collaborated with scholars based in United States, Japan and Taiwan. Frequent co-authors include Michael Current, D. J. Eaglesham, O. W. Holland, C. W. Magee, J. W. Mayer, J. Melngailis, Eric Chason, J. M. Poate, Mark E. Law and S. T. Picraux. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of The Electrochemical Society, Journal of Crystal Growth, Materials Science in Semiconductor Processing and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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