T. E. Haynes

4.3k citations

116 papers · 3.6k · 1 hit paper · h-index 34

Impact in

Polymers and Plastics top 2%
- Transition Metal Oxide Nanomaterials
Electrical and Electronic Engineering top 1%
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors

Papers in

Electrical and Electronic Engineering 99
- Silicon and Solar Cell Technologies 61
- Integrated Circuits and Semiconductor Failure Analysis 42
- Semiconductor materials and devices 24
- Thin-Film Transistor Technologies 14
Atomic and Molecular Physics, and Optics 51
- Semiconductor materials and interfaces 41

Co-authors: D. J. Eaglesham (22 shared papers)L. A. Boatner (16 shared papers)René López (8 shared papers)L. C. Feldman (8 shared papers)Richard F. Haglund (8 shared papers)H.‐J. Gossmann (19 shared papers)D. C. Jacobson (21 shared papers)O. W. Holland (14 shared papers)
Journals: Applied Physics Letters (35 papers)Journal of Applied Physics (17 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (11 papers)Journal of Electronic Materials (3 papers)Physical review. B, Condensed matter (3 papers)
Partner nations: United States Japan Croatia

In The Last Decade

T. E. Haynes

108 papers receiving 3.5k citations

T. E. Haynes's Hit Papers

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 · 496 citations

Peers

Countries citing papers authored by T. E. Haynes

Since Specialization

Citations

This map shows the geographic impact of T. E. Haynes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. E. Haynes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. E. Haynes more than expected).

Fields of papers citing papers by T. E. Haynes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. E. Haynes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. E. Haynes. The network helps show where T. E. Haynes may publish in the future.

Co-authors

The 25 scholars most cited alongside T. E. Haynes, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. E. Haynes Line = papers co-authored together T. E. Haynes links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 116 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon Journal of Applied Physics ·P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C.S. Rafferty, George H. Gilmer, M. Jaraı́z, J. M. Poate, H. S. Luftman, T. E. Haynes Hit paper breakdown →	1997	496
2	Size effects in the structural phase transition ofVO2nanoparticles Physical review. B, Condensed matter ·René López, T. E. Haynes, L. A. Boatner, L. C. Feldman, Richard F. Haglund	2002	343
3	Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix Journal of Applied Physics ·René López, L. A. Boatner, T. E. Haynes, L. C. Feldman, Richard F. Haglund	2002	140
4	Study of the effect of ion implantation on the electrical and microstructural properties of tin-doped indium oxide thin films Journal of Applied Physics ·Yuzo Shigesato, David C. Paine, T. E. Haynes	1993	108
5	Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ Applied Physics Letters ·Aditya Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, D. J. Eaglesham	1998	104
6	Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation Applied Physics Letters ·René López, L. A. Boatner, T. E. Haynes, Richard F. Haglund, L. C. Feldman	2001	93
7	Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation Applied Physics Letters ·M. K. Weldon, M. Collot, Yves J. Chabal, V. C. Venezia, Aditya Agarwal, T. E. Haynes, D. J. Eaglesham, S. B. Christman, E. E. Chaban	1998	85
8	Temperature-controlled surface plasmon resonance in VO_2 nanorods Optics Letters ·René López, T. E. Haynes, L. A. Boatner, L. C. Feldman, Richard F. Haglund	2002	81
9	A study of the Au/Ni ohmic contact on p-GaN Journal of Applied Physics ·D. Qiao, L. S. Yu, S. S. Lau, J. Y. Lin, H. X. Jiang, T. E. Haynes	2000	79
10	Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon Applied Physics Letters ·T. E. Haynes, D. J. Eaglesham, P.A. Stolk, H.‐J. Gossmann, D. C. Jacobson, J. M. Poate	1996	75
11	Implant damage and transient enhanced diffusion in Si Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·D. J. Eaglesham, P.A. Stolk, H.‐J. Gossmann, T. E. Haynes, J. M. Poate	1995	74
12	Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling Applied Physics Letters ·V. C. Venezia, D. J. Eaglesham, T. E. Haynes, Aditya Agarwal, D. C. Jacobson, H.‐J. Gossmann, F. Baumann	1998	72
13	Electrical properties of heteroepitaxial grown tin-doped indium oxide films Journal of Applied Physics ·Naoaki Taga, Hidefumi Odaka, Yuzo Shigesato, Itaru Yasui, Masayuki Kamei, T. E. Haynes	1996	70
14	Comparative study of implantation-induced damage in GaAs and Ge: Temperature and flux dependence Applied Physics Letters ·T. E. Haynes, O. W. Holland	1991	69
15	Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials Applied Physics Letters ·Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham, Lourdes Pelaz, D. C. Jacobson, T. E. Haynes, Yu. E. Erokhin	1997	68
16	Optical nonlinearities in VO2 nanoparticles and thin films Applied Physics Letters ·René López, Richard F. Haglund, L. C. Feldman, L. A. Boatner, T. E. Haynes	2004	62
17	Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon Applied Physics Letters ·V. C. Venezia, T. E. Haynes, Aditya Agarwal, Lourdes Pelaz, H.‐J. Gossmann, D. C. Jacobson, D. J. Eaglesham	1999	60
18	Interstitial defects in silicon from 1–5 keV Si+ ion implantation Applied Physics Letters ·Aditya Agarwal, T. E. Haynes, D. J. Eaglesham, Hans-J. Gossmann, D. C. Jacobson, J. M. Poate, Yu. E. Erokhin	1997	60
19	Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures Applied Physics Letters ·D. Qiao, L. S. Yu, Lijun Jia, P.M. Asbeck, S. S. Lau, T. E. Haynes	2002	59
20	Boron-enhanced diffusion of boron from ultralow-energy ion implantation Applied Physics Letters ·Aditya Agarwal, H.‐J. Gossmann, D. J. Eaglesham, S. B. Herner, A. T. Fiory, T. E. Haynes	1999	59

About T. E. Haynes

T. E. Haynes is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 116 papers that have together received 3.6k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (61 papers), Integrated Circuits and Semiconductor Failure Analysis (42 papers), Ion-surface interactions and analysis (42 papers), Semiconductor materials and interfaces (41 papers), Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (14 papers), Transition Metal Oxide Nanomaterials (12 papers) and ZnO doping and properties (11 papers). The work is most often cited by research in Polymers and Plastics (739 citations), Electrical and Electronic Engineering (2.9k citations), Computational Mechanics (894 citations), Atomic and Molecular Physics, and Optics (1.1k citations) and Electronic, Optical and Magnetic Materials (486 citations). T. E. Haynes has collaborated with scholars based in United States, Japan and Croatia. Frequent co-authors include D. J. Eaglesham, L. A. Boatner, René López, L. C. Feldman, Richard F. Haglund, H.‐J. Gossmann, D. C. Jacobson, O. W. Holland, J. M. Poate and P.A. Stolk. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Electronic Materials and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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