Daniel Piedra

3.4k citations

37 papers · 1.8k · h-index 20

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 33
- GaN-based semiconductor devices and materials 33
Electrical and Electronic Engineering 33
- Silicon Carbide Semiconductor Technologies 24
- Semiconductor materials and devices 11
- Advanced DC-DC Converters 4
- Ferroelectric and Negative Capacitance Devices 2

Co-authors: Min Sun (17 shared papers)Tomás Palacios (31 shared papers)Yuhao Zhang (11 shared papers)Tomás Palacios (4 shared papers)Jie Hu (4 shared papers)Hyung‐Seok Lee (5 shared papers)Tatsuya Fujishima (5 shared papers)Zhihong Liu (3 shared papers)
Journals: IEEE Electron Device Letters (7 papers)Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Express (3 papers)Japanese Journal of Applied Physics (2 papers)
Partner nations: United States Japan Singapore

In The Last Decade

Daniel Piedra

37 papers receiving 1.7k citations

Peers

Countries citing papers authored by Daniel Piedra

Since Specialization

Citations

This map shows the geographic impact of Daniel Piedra's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Piedra with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Piedra more than expected).

Fields of papers citing papers by Daniel Piedra

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Piedra. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Piedra. The network helps show where Daniel Piedra may publish in the future.

Co-authors

The 25 scholars most cited alongside Daniel Piedra, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Daniel Piedra Line = papers co-authored together Daniel Piedra links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	GaN-on-Si Vertical Schottky and p-n Diodes IEEE Electron Device Letters ·Yuhao Zhang, Min Sun, Daniel Piedra, M. Azize, Xu Zhang, Tatsuya Fujishima, Tomás Palacios	2014	167
2	Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors IEEE Transactions on Electron Devices ·Yuhao Zhang, Min Sun, Zhihong Liu, Daniel Piedra, Hyung‐Seok Lee, Feng Gao, Tatsuya Fujishima, Tomás Palacios	2013	160
3	Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation IEEE Electron Device Letters ·Yuhao Zhang, Zhihong Liu, Marko J. Tadjer, Min Sun, Daniel Piedra, Christopher Hatem, Travis J. Anderson, Lunet E. Luna, Anindya Nath, Andrew D. Koehler, Hironori Okumura, Jie Hu, Xu Zhang, Xiang Gao, Boris N. Feigelson, Karl D. Hobart, Tomás Palacios	2017	154
4	Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes IEEE Transactions on Electron Devices ·Yuhao Zhang, Min Sun, Hiu Yung Wong, Yuxuan Lin, Puneet Srivastava, Christopher Hatem, M. Azize, Daniel Piedra, Lili Yu, Takamichi Sumitomo, Nelson Braga, R. Mickevičius, Tomás Palacios	2015	142
5	Materials and processing issues in vertical GaN power electronics Materials Science in Semiconductor Processing ·Jie Hu, Yuhao Zhang, Min Sun, Daniel Piedra, Nadim Chowdhury, Tomás Palacios	2017	134
6	3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier IEEE Electron Device Letters ·Hyung‐Seok Lee, Daniel Piedra, Min Sun, Xiang Gao, Shiping Guo, Tomás Palacios	2012	131
7	Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit IEEE Electron Device Letters ·Yuhao Zhang, Min Sun, Joshua Perozek, Zhihong Liu, Ahmad Zubair, Daniel Piedra, Nadim Chowdhury, Xiang Gao, Kenneth L. Shepard, Tomás Palacios	2018	108
8	1200 V GaN vertical fin power field-effect transistors The HKU Scholars Hub (University of Hong Kong) ·Yang Zhang, Min Sun, Daniel Piedra, Jie Hu, Zhouming Liu, Yuxuan Lin, Xiaoqin Gao, Ken Shepard, Tomás Palacios	2017	103
9	Trench formation and corner rounding in vertical GaN power devices Applied Physics Letters ·Yuhao Zhang, Min Sun, Zhihong Liu, Daniel Piedra, Jie Hu, Xiang Gao, Tomás Palacios	2017	93
10	High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes IEEE Electron Device Letters ·Yuhao Zhang, Daniel Piedra, Min Sun, Jonas Hennig, A. Dadgar, Lili Yu, Tomás Palacios	2016	76
11	Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings The HKU Scholars Hub (University of Hong Kong) ·Yang Zhang, Min Sun, Z. Liu, Daniel Piedra, Ming Pan, Xiaoqin Gao, Yuxuan Lin, Ahmad Zubair, Lili Yu, Tomás Palacios	2016	74
12	AlN metal–semiconductor field-effect transistors using Si-ion implantation Japanese Journal of Applied Physics ·Hironori Okumura, Sami Suihkonen, Jori Lemettinen, Akira Uedono, Yuhao Zhang, Daniel Piedra, Tomás Palacios	2018	57
13	Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes Applied Physics Letters ·Yuhao Zhang, Min Sun, Daniel Piedra, Jonas Hennig, A. Dadgar, Tomás Palacios	2017	43
14	Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level V<inf>t</inf> engineering for transconductance compensation Sameer Joglekar, Ujwal Radhakrishna, Daniel Piedra, D.A. Antoniadis, Tomás Palacios	2017	43
15	Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment Applied Physics Letters ·Tatsuya Fujishima, Sameer Joglekar, Daniel Piedra, Hyung‐Seok Lee, Yuhao Zhang, Akira Uedono, Tomás Palacios	2013	34
16	Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate Applied Physics Express ·Min Sun, Hyung‐Seok Lee, Bin Lu, Daniel Piedra, Tomás Palacios	2012	32
17	Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC–DC Multiphase Buck Converter IEEE Journal of Solid-State Circuits ·Eyal Aklimi, Daniel Piedra, Kevin Tien, Tomás Palacios, Kenneth L. Shepard	2017	32
18	Impact of Al<sub>2</sub>O<sub>3</sub> Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Sameer Joglekar, M. Azize, Eric J. Jones, Daniel Piedra, Silvija Gradečak, Tomás Palacios	2015	29
19	High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping The HKU Scholars Hub (University of Hong Kong) ·Ujwal Radhakrishna, Daniel Piedra, Yuhao Zhang, Tomás Palacios, D.A. Antoniadis	2013	29
20	GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration IEEE Electron Device Letters ·Ko‐Tao Lee, C. Bayram, Daniel Piedra, E. Sprogis, Hariklia Deligianni, Balakrishnan Krishnan, George D. Papasouliotis, Ajit Paranjpe, Eyal Aklimi, Ken Shepard, Tomás Palacios, D. K. Sadana	2017	22

About Daniel Piedra

Daniel Piedra is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 37 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (33 papers), Silicon Carbide Semiconductor Technologies (24 papers), Ga2O3 and related materials (12 papers), Semiconductor materials and devices (11 papers), ZnO doping and properties (6 papers), Advanced DC-DC Converters (4 papers), Semiconductor Quantum Structures and Devices (4 papers) and Ferroelectric and Negative Capacitance Devices (2 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (808 citations), Electrical and Electronic Engineering (1.4k citations), Atomic and Molecular Physics, and Optics (298 citations) and Materials Chemistry (307 citations). Daniel Piedra has collaborated with scholars based in United States, Japan and Singapore. Frequent co-authors include Min Sun, Tomás Palacios, Yuhao Zhang, Tomás Palacios, Jie Hu, Hyung‐Seok Lee, Tatsuya Fujishima, Zhihong Liu, M. Azize and Xiang Gao. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Applied Physics Express and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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