Robert Therrien

1.5k citations

35 papers · 1.1k · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 29
- GaN-based semiconductor devices and materials 26
- Physics of Superconductivity and Magnetism 3
Electronic, Optical and Magnetic Materials 13
- Ga2O3 and related materials 11

Co-authors: Edwin L. Piner (15 shared papers)P. Rajagopal (17 shared papers)Sameer Singhal (17 shared papers)Kevin J. Linthicum (17 shared papers)J. W. Johnson (17 shared papers)John C. Roberts (11 shared papers)Andrei Vescan (6 shared papers)J.D. Brown (3 shared papers)
Journals: Applied Physics Letters (3 papers)Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (2 papers)Microelectronics Reliability (1 paper)Semiconductor Science and Technology (1 paper)Microelectronic Engineering (1 paper)
Partner nations: United States United Kingdom Russia

In The Last Decade

Robert Therrien

35 papers receiving 981 citations

Peers

Countries citing papers authored by Robert Therrien

Since Specialization

Citations

This map shows the geographic impact of Robert Therrien's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert Therrien with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert Therrien more than expected).

Fields of papers citing papers by Robert Therrien

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert Therrien. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert Therrien. The network helps show where Robert Therrien may publish in the future.

Co-authors

The 25 scholars most cited alongside Robert Therrien, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Robert Therrien Line = papers co-authored together Robert Therrien links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 35 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	12 W/mm AlGaN–GaN HFETs on Silicon Substrates IEEE Electron Device Letters ·J. W. Johnson, Edwin L. Piner, Andrei Vescan, Robert Therrien, P. Rajagopal, John C. Roberts, J.D. Brown, Sameer Singhal	2004	193
2	Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes Applied Physics Letters ·B. S. Kang, Seong Hun Kim, Fan Ren, J. W. Johnson, Robert Therrien, P. Rajagopal, John C. Roberts, Edwin L. Piner	2004	102
3	AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates Solid-State Electronics ·J.D. Brown, Ric Borges, Edwin L. Piner, Andrei Vescan, Sameer Singhal, Robert Therrien	2002	101
4	Electrical detection of deoxyribonucleic acid hybridization with AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·B. S. Kang, Stephen Pearton, J. J. Chen, Fan Ren, J. W. Johnson, Robert Therrien, P. Rajagopal, John C. Roberts	2006	80
5	Reliability of large periphery GaN-on-Si HFETs Microelectronics Reliability ·Sameer Singhal, T. Li, A. Chaudhari, Allen W. Hanson, Robert Therrien, J. W. Johnson, Walter Nagy, J. Marquart	2006	75
6	Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces Applied Surface Science ·Robert Therrien, Gerald Lucovsky, Robert F. Davis	2000	52
7	GaN-ON-Si Failure Mechanisms and Reliability Improvements Sameer Singhal, John C. Roberts, P. Rajagopal, T. Li, Allen W. Hanson, Robert Therrien, J. W. Johnson, Isik C. Kizilyalli	2006	49
8	Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane Applied Physics Letters ·B. S. Kang, J. Kim, Sung Hun Jang, Fan Ren, J. W. Johnson, Robert Therrien, P. Rajagopal, John C. Roberts	2005	45
9	150 W GaN-on-Si RF Power Transistor IEEE MTT-S International Microwave Symposium Digest, 2005. ·Walter Nagy, Sameer Singhal, Ric Borges, J. W. Johnson, J. Brown, Robert Therrien, A. Chaudhari, Allen W. Hanson	2005	43
10	X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms Journal of Applied Physics ·Sean W. King, Eric Porter Carlson, Robert Therrien, J. A. Christman, R. J. Nemanich, Robert F. Davis	1999	33
11	Material, process, and device development of GaN-based HFETs on silicon substrates J. W. Johnson, Ji‐Xing Gao, K. Lucht, John Williamson, C. Strautin, Justin A. Riddle, Robert Therrien, P. Rajagopal	2004	31
12	A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency Robert Therrien, Sameer Singhal, J. W. Johnson, Walter Nagy, Ric Borges, A. Chaudhari, Allen W. Hanson, Andrew P. Edwards	2006	25
13	AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Andrei Vescan, J.D. Brown, J. W. Johnson, Robert Therrien, Thomas Gehrke, P. Rajagopal, John C. Roberts, Sameer Singhal	2002	25
14	Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces physica status solidi (a) ·Robert Therrien, G. Lucovsky, Robert F. Davis	1999	24
15	The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO2-SiO2 Alloys MRS Proceedings ·G. B. Rayner, Robert Therrien, G. Lucovsky	2000	24
16	Effects of Dissipation on a Superconducting Single Electron Transistor Physical Review Letters ·Jan B. Kycia, J. Chen, Robert Therrien, Çağlıyan Kurdak, K. L. Campman, Arthur C. Gossard, John L. Clarke	2001	21
17	Installation of the cryogenic dark matter search (CDMS) Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Peter D. Barnes, Antonio da Silva, D. S. Akerib, D. Bauer, Paul L. Brink, Blas Cabrera, D. O. Caldwell, B. Chugg	1996	20
18	GaN-On-Si Reliability: A Comparative Study Between Process Platforms Sameer Singhal, A. Chaudhari, Allen W. Hanson, J. W. Johnson, Robert Therrien, P. Rajagopal, T. Li, Chae Yeong Park	2006	16
19	Reliability of large periphery GaN-on-Si HFETs Sameer Singhal, T. Li, A. Chaudhari, Allen W. Hanson, Robert Therrien, J. W. Johnson, W. Nagy, J. Marquart	2005	13
20	Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates Journal of Electronic Materials ·A. Hanser, Colin A. Wolden, William G. Perry, Tsvetanka S. Zheleva, Eric Porter Carlson, Andrew Banks, Robert Therrien, Robert F. Davis	1998	13

About Robert Therrien

Robert Therrien is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Nuclear and High Energy Physics and Astronomy and Astrophysics, having authored 35 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (26 papers), Semiconductor materials and devices (15 papers), Ga2O3 and related materials (11 papers), Silicon Carbide Semiconductor Technologies (10 papers), Radio Frequency Integrated Circuit Design (6 papers), ZnO doping and properties (4 papers), Dark Matter and Cosmic Phenomena (4 papers) and Physics of Superconductivity and Magnetism (3 papers). The work is most often cited by research in Condensed Matter Physics (848 citations), Electronic, Optical and Magnetic Materials (282 citations), Electrical and Electronic Engineering (785 citations), Bioengineering (53 citations) and Atomic and Molecular Physics, and Optics (185 citations). Robert Therrien has collaborated with scholars based in United States, United Kingdom and Russia. Frequent co-authors include Edwin L. Piner, P. Rajagopal, Sameer Singhal, Kevin J. Linthicum, J. W. Johnson, John C. Roberts, Andrei Vescan, J.D. Brown, Robert F. Davis and Allen W. Hanson. Their work appears in journals such as Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, Microelectronics Reliability, Semiconductor Science and Technology and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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