Gerald Lucovsky

23.0k citations
561 papers · 20.3k · 7 hit papers · h-index 67

Impact in

    • Glass properties and applications
    • Silicon Nanostructures and Photoluminescence
    • Phase-change materials and chalcogenides
    • Electronic and Structural Properties of Oxides

Papers in

    • Semiconductor materials and devices 340
    • Thin-Film Transistor Technologies 155
    • Advancements in Semiconductor Devices and Circuit Design 65
    • Silicon and Solar Cell Technologies 56
    • Silicon Nanostructures and Photoluminescence 110
    • Electronic and Structural Properties of Oxides 77
    • Phase-change materials and chalcogenides 72

Gerald Lucovsky

535 papers receiving 19.2k citations

Gerald Lucovsky's Hit Papers

Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping 2007 · 515 citations
5150+20+40Years since publication200400600

Peers

Gerald Lucovsky
Comparison fields: 5 of 114
  • Ceramics and Composites 3.2k
  • Materials Chemistry 13.5k
  • Electrical and Electronic Engineering 14.2k
  • Electronic, Optical and Magnetic Materials 2.9k
  • Atomic and Molecular Physics, and Optics 3.9k
Replace A.K. Jonscher with:
A.K. Jonscher United Kingdom
H. Fritzsche United States
Robert A. Street United States
Glen A. Slack United States
K. L. Chopra India
J. W. Mayer United States
L. Ley Germany
Sergio P. S. Porto United States
Robert S Averback United States
Marcos Grimsditch United States
Gerald Lucovsky relative to A.K. Jonscher United Kingdom A.K. Jonscher's profile →
Citations per field
00.5×1.5×1.8×
A.K. Jonscher · 1×
Citations per year

Countries citing papers authored by Gerald Lucovsky

Since Specialization
Citations

This map shows the geographic impact of Gerald Lucovsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gerald Lucovsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gerald Lucovsky more than expected).

Fields of papers citing papers by Gerald Lucovsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gerald Lucovsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gerald Lucovsky. The network helps show where Gerald Lucovsky may publish in the future.

Co-authors

The 25 scholars most cited alongside Gerald Lucovsky, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Gerald Lucovsky Line = papers co-authored together Gerald Lucovsky links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 561 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Structural interpretation of the vibrational spectra of a -Si: H alloys
Hit paper breakdown →
1979708
2
Raman scattering characterization of carbon bonding in diamond and diamondlike thin films
Hit paper breakdown →
1988647
3
On the photoionization of deep impurity centers in semiconductors
Hit paper breakdown →
1965575
4
Chemical effects on the frequencies of Si-H vibrations in amorphous solids
Hit paper breakdown →
1979571
5
Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping
Hit paper breakdown →
2007515
6 1976443
7
Structural interpretation of the infrared and Raman spectra of glasses in the alloy system Ge1−xSx
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1974422
8
Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films
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1983407
9 1967370
10 1987355
11 2002342
12 1986274
13 1970268
14 1985265
15 1977242
16 1973231
17 1972225
18 1979218
19 1976214
20 1980204

About Gerald Lucovsky

Gerald Lucovsky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 561 papers that have together received 20.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (340 papers), Thin-Film Transistor Technologies (155 papers), Silicon Nanostructures and Photoluminescence (110 papers), Electronic and Structural Properties of Oxides (77 papers), Semiconductor materials and interfaces (76 papers), Phase-change materials and chalcogenides (72 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers) and Silicon and Solar Cell Technologies (56 papers). The work is most often cited by research in Ceramics and Composites (3.2k citations), Materials Chemistry (13.5k citations), Electrical and Electronic Engineering (14.2k citations), Electronic, Optical and Magnetic Materials (2.9k citations) and Atomic and Molecular Physics, and Optics (3.9k citations). Gerald Lucovsky has collaborated with scholars based in United States, Germany and South Korea. Frequent co-authors include R. J. Nemanich, Frank L. Galeener, John C. Knights, David Tsu, Robert M. White, Richard McKelvy Martin, Richard C. Keezer, Michael J. Mantini, S. A. Solin and J. C. Phillips. Their work appears in journals such as Journal of Non-Crystalline Solids, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Applied Surface Science, Microelectronic Engineering and Solid State Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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