Andrei V. Osinsky

8.0k citations

204 papers · 7.0k · h-index 46

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 106
- GaN-based semiconductor devices and materials 105
Electronic, Optical and Magnetic Materials 125
- Ga2O3 and related materials 124

Co-authors: Fikadu Alema (48 shared papers)Remis Gaska (13 shared papers)Leonid Chernyak (28 shared papers)Stephen Pearton (72 shared papers)Brian Hertog (31 shared papers)Michael S. Shur (8 shared papers)Henryk Temkin (14 shared papers)A. M. Dabiran (45 shared papers)
Journals: Applied Physics Letters (66 papers)Journal of Applied Physics (18 papers)Solid-State Electronics (10 papers)Journal of Electronic Materials (8 papers)Electronics Letters (7 papers)
Partner nations: United States Russia Sweden

In The Last Decade

Andrei V. Osinsky

198 papers receiving 6.8k citations

Peers

Countries citing papers authored by Andrei V. Osinsky

Since Specialization

Citations

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Fields of papers citing papers by Andrei V. Osinsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrei V. Osinsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrei V. Osinsky. The network helps show where Andrei V. Osinsky may publish in the future.

Co-authors

The 25 scholars most cited alongside Andrei V. Osinsky, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Andrei V. Osinsky Line = papers co-authored together Andrei V. Osinsky links everyone, so they are left out of the graph.

All Works

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Showing the 20 most-cited of 204 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Schottky barrier detectors on GaN for visible–blind ultraviolet detection Applied Physics Letters ·Q. Chen, Jinhong Yang, Andrei V. Osinsky, S. Gangopadhyay, Beomdu Lim, M. Zubair Anwar, Md Asif Khan, Dmitri V. Kuksenkov	1997	276
2	Self-heating in high-power AlGaN-GaN HFETs IEEE Electron Device Letters ·Remis Gaska, Andrei V. Osinsky, J. Yang, Michael S. Shur	1998	262
3	MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature APL Materials ·Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei V. Osinsky, James S. Speck	2018	226
4	Low noise p-π-n GaN ultraviolet photodetectors Applied Physics Letters ·Andrei V. Osinsky, S. Gangopadhyay, Remis Gaska, Benjamin Samuel Williams, Md Asif Khan, Dmitri V. Kuksenkov, Henryk Temkin	1997	208
5	High-temperature performance of AlGaN/GaN HFETs on SiC substrates IEEE Electron Device Letters ·Remis Gaska, Q. Chen, Jinwei Yang, Andrei V. Osinsky, Md Asif Khan, Michael S. Shur	1997	186
6	Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Applied Physics Letters ·Remis Gaska, J. Yang, Andrei V. Osinsky, Q. Chen, M. Asif Khan, Alexei O. Orlov, Gregory L. Snider, Michael S. Shur	1998	183
7	Luminescence properties of defects in ZnO Physica B Condensed Matter ·Michael Alexander Reshchikov, Hadis Morkoç, Bill Nemeth, Jeff Nause, Jun Xie, Brian Hertog, Andrei V. Osinsky	2007	164
8	Mg Zn O ∕ Al Ga N heterostructure light-emitting diodes Applied Physics Letters ·Andrei V. Osinsky, Jianwei Dong, M. Z. Kauser, Brian Hertog, A. M. Dabiran, P. P. Chow, Stephen Pearton, O. Lopatiuk	2004	148
9	Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD Journal of Crystal Growth ·Fikadu Alema, Brian Hertog, Andrei V. Osinsky, Partha Mukhopadhyay, Mykyta Toporkov, Winston Vaughan Schoenfeld	2017	135
10	Schottky barrier photodetectors based on AlGaN Applied Physics Letters ·Andrei V. Osinsky, S. Gangopadhyay, Beomdu Lim, M. Zubair Anwar, Md Asif Khan, Dmitri V. Kuksenkov, Henryk Temkin	1998	132
11	Electron beam induced current measurements of minority carrier diffusion length in gallium nitride Applied Physics Letters ·Leonid Chernyak, Andrei V. Osinsky, Henryk Temkin, Jun Yang, Q. Chen, M. A. Khan	1996	125
12	MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor Applied Physics Letters ·George A. Seryogin, Fikadu Alema, Nicholas A. Valente, Houqiang Fu, Erich Steinbrunner, Adam T. Neal, Shin Mou, Aaron Fine	2020	124
13	Visible-blind GaN Schottky barrier detectors grown on Si(111) Applied Physics Letters ·Andrei V. Osinsky, S. Gangopadhyay, Jinwei Yang, Remis Gaska, Dmitri V. Kuksenkov, Henryk Temkin, I. K. Shmagin, Y. C. Chang	1998	122
14	Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors Applied Physics Letters ·B. S. Kang, Fan Ren, Lin Wang, Charles M. Lofton, Weihong W. Tan, Stephen Pearton, A. M. Dabiran, Andrei V. Osinsky	2005	118
15	Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD APL Materials ·Fikadu Alema, Yuewei Zhang, Andrei V. Osinsky, Nazar Orishchin, Nicholas A. Valente, Akhil Mauze, James S. Speck	2020	98
16	High quality GaN–InGaN heterostructures grown on (111) silicon substrates Applied Physics Letters ·J. Yang, C. J. Sun, Q. Chen, M. Zubair Anwar, M. Asif Khan, Sergey A. Nikishin, George A. Seryogin, Andrei V. Osinsky	1996	91
17	Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β -Ga2O3 APL Materials ·Fikadu Alema, Yuewei Zhang, Andrei V. Osinsky, Nicholas A. Valente, Akhil Mauze, Takeki Itoh, James S. Speck	2019	90
18	Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction Applied Physics Letters ·Dmitri V. Kuksenkov, Henryk Temkin, Andrei V. Osinsky, Remis Gaska, M. Asif Khan	1998	88
19	Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film APL Materials ·Fikadu Alema, Brian Hertog, Partha Mukhopadhyay, Yuewei Zhang, Akhil Mauze, Andrei V. Osinsky, Winston Vaughan Schoenfeld, James S. Speck	2019	87
20	Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film physica status solidi (a) ·Fikadu Alema, Brian Hertog, Oleg Ledyaev, Dmitry Volovik, Grant Thoma, Ross Miller, Andrei V. Osinsky, Partha Mukhopadhyay	2017	86

About Andrei V. Osinsky

Andrei V. Osinsky is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment and Electrical and Electronic Engineering, having authored 204 papers that have together received 7.0k indexed citations. Recurring topics across this work include Ga2O3 and related materials (124 papers), ZnO doping and properties (108 papers), GaN-based semiconductor devices and materials (105 papers), Semiconductor materials and devices (39 papers), Advanced Photocatalysis Techniques (32 papers), Gas Sensing Nanomaterials and Sensors (23 papers), Semiconductor Quantum Structures and Devices (20 papers) and Electronic and Structural Properties of Oxides (18 papers). The work is most often cited by research in Condensed Matter Physics (3.4k citations), Electronic, Optical and Magnetic Materials (4.0k citations), Materials Chemistry (4.1k citations), Renewable Energy, Sustainability and the Environment (1.0k citations) and Electrical and Electronic Engineering (3.0k citations). Andrei V. Osinsky has collaborated with scholars based in United States, Russia and Sweden. Frequent co-authors include Fikadu Alema, Remis Gaska, Leonid Chernyak, Stephen Pearton, Brian Hertog, Michael S. Shur, Henryk Temkin, A. M. Dabiran, P. P. Chow and Md Asif Khan. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, Journal of Electronic Materials and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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