Andrei E. Botchkarev

6.2k citations

103 papers · 5.3k · 1 hit paper · h-index 42

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 92
- GaN-based semiconductor devices and materials 92
Electronic, Optical and Magnetic Materials 43
- Ga2O3 and related materials 43

Co-authors: Hadis Morkoç (70 shared papers)Hadis MORKOÇ (20 shared papers)A. Salvador (47 shared papers)S. Noor Mohammad (30 shared papers)Özgür Aktaş (25 shared papers)Angus A. Rockett (4 shared papers)G. Martin (3 shared papers)Wook Kim (9 shared papers)
Journals: Applied Physics Letters (36 papers)Journal of Applied Physics (13 papers)Electronics Letters (6 papers)Solid-State Electronics (6 papers)Philosophical Magazine B (4 papers)
Partner nations: United States Italy Russia

In The Last Decade

Andrei E. Botchkarev

99 papers receiving 5.2k citations

Andrei E. Botchkarev's Hit Papers

align trajectories log scale

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy 1996 · 597 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

1996 Applied Physics Letters

Peers

Countries citing papers authored by Andrei E. Botchkarev

Since Specialization

Citations

This map shows the geographic impact of Andrei E. Botchkarev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrei E. Botchkarev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrei E. Botchkarev more than expected).

Fields of papers citing papers by Andrei E. Botchkarev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrei E. Botchkarev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrei E. Botchkarev. The network helps show where Andrei E. Botchkarev may publish in the future.

Co-authors

The 25 scholars most cited alongside Andrei E. Botchkarev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Andrei E. Botchkarev Line = papers co-authored together Andrei E. Botchkarev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 103 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy Applied Physics Letters ·G. Martin, Andrei E. Botchkarev, Angus A. Rockett, Hadis MORKOÇ Hit paper breakdown →	1996	597
2	Very low resistance multilayer Ohmic contact to n-GaN Applied Physics Letters ·Zhifang Fan, S. Noor Mohammad, Wook Kim, Özgür Aktaş, Andrei E. Botchkarev, Hadis MORKOÇ	1996	388
3	Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN Applied Physics Letters ·Sergei Ruvimov, Z. Liliental-Weber, Jonathan Washburn, K. J. Duxstad, E. E. Häller, Ziwei Fan, S. Noor Mohammad, Wonsuck Kim	1996	264
4	Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy Applied Physics Letters ·G. Martin, S. Strite, Andrei E. Botchkarev, Anchal Agarwal, Angus A. Rockett, Hadis Morkoç, Walter R. L. Lambrecht, B. Segall	1994	201
5	High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors Applied Physics Letters ·Özgür Aktaş, Ziwei Fan, S. Noor Mohammad, Andrei E. Botchkarev, Hadis Morkoç	1996	187
6	On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy Journal of Applied Physics ·Wook Kim, Andrei E. Botchkarev, A. Salvador, Galina Popovici, H. Tang, Hadis Morkoç	1997	152
7	Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells: Impact on the optical spectra Physical review. B, Condensed matter ·R. Cingolani, Andrei E. Botchkarev, Hong Tang, Hadis Morkoç, G. Traetta, Giuliano Coli, Mauro Lomascolo, Aldo Di Carlo	2000	151
8	Nature of Mg impurities in GaN Applied Physics Letters ·J. Z. Li, J.Y. Lin, H. X. Jiang, A. Salvador, Andrei E. Botchkarev, Hadis Morkoç	1996	135
9	Deep centers in n-GaN grown by reactive molecular beam epitaxy Applied Physics Letters ·Z-Q. Fang, David C. Look, Wonsuck Kim, Ziwei Fan, Andrei E. Botchkarev, Hadis MORKOÇ	1998	128
10	High transconductance-normally-off GaN MODFETs Electronics Letters ·A. Özgür, Wonsuck Kim, Zongjian Fan, Andrei E. Botchkarev, A. Salvador, S. Noor Mohammad, Boris Sverdlov, H. Morkoç	1995	122
11	Mechanisms of band-edge emission in Mg-doped p-type GaN Applied Physics Letters ·Mark Power Smith, G. D. Chen, J.Y. Lin, H. X. Jiang, A. Salvador, Boris Sverdlov, Andrei E. Botchkarev, Hadis MORKOÇ	1996	119
12	Deep level defects in n-type GaN grown by molecular beam epitaxy Applied Physics Letters ·C. D. Wang, L. S. Yu, S. S. Lau, Edward T. Yu, W. Kim, Andrei E. Botchkarev, Hadis Morkoç	1998	112
13	Electrical conduction in platinum–gallium nitride Schottky diodes Journal of Applied Physics ·K. Suzue, S. Noor Mohammad, Ziwei Fan, W. Kim, Özgür Aktaş, Andrei E. Botchkarev, Hadis Morkoç	1996	103
14	Mg-doped p -type GaN grown by reactive molecular beam epitaxy Applied Physics Letters ·Wook Kim, A. Salvador, Andrei E. Botchkarev, Özgür Aktaş, S. Noor Mohammad, H. Morcoç	1996	100
15	Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells Applied Physics Letters ·H. S. Kim, J.Y. Lin, H. X. Jiang, Chi‐Wai Chow, Andrei E. Botchkarev, Hadis MORKOÇ	1998	93
16	Microwave performance of AlGaN/GaN inverted MODFET's IEEE Electron Device Letters ·Özgür Aktaş, Ziwei Fan, Andrei E. Botchkarev, S. Noor Mohammad, M. Roth, T. Jenkins, L.T. Kehias, Hadis Morkoç	1997	93
17	Deep-center hopping conduction in GaN Journal of Applied Physics ·David C. Look, DONALD C. REYNOLDS, Wonsuck Kim, Özgür Aktaş, Andrei E. Botchkarev, A. Salvador, Hadis Morkoç	1996	89
18	Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates Applied Physics Letters ·Galina Popovici, Wook Kim, Andrei E. Botchkarev, Haipeng Tang, Hadis Morkoç, James S. Solomon	1997	86
19	Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy Applied Physics Letters ·Fayçal Hamdani, Andrei E. Botchkarev, Wonsuck Kim, Hadis Morkoç, Mark Yeadon, J Murray Gibson, S.-C. Y. Tsen, David John Smith	1997	86
20	Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy Journal of Applied Physics ·Fayçal Hamdani, Mark Yeadon, David John Smith, H. Tang, W. Kim, A. Salvador, Andrei E. Botchkarev, J Murray Gibson	1998	84

About Andrei E. Botchkarev

Andrei E. Botchkarev is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Mechanics of Materials, having authored 103 papers that have together received 5.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (92 papers), Semiconductor materials and devices (54 papers), Ga2O3 and related materials (43 papers), Semiconductor Quantum Structures and Devices (30 papers), ZnO doping and properties (17 papers), Metal and Thin Film Mechanics (15 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Semiconductor materials and interfaces (10 papers). The work is most often cited by research in Condensed Matter Physics (4.5k citations), Electronic, Optical and Magnetic Materials (2.1k citations), Atomic and Molecular Physics, and Optics (2.1k citations), Electrical and Electronic Engineering (2.5k citations) and Materials Chemistry (1.7k citations). Andrei E. Botchkarev has collaborated with scholars based in United States, Italy and Russia. Frequent co-authors include Hadis Morkoç, Hadis MORKOÇ, A. Salvador, S. Noor Mohammad, Özgür Aktaş, Angus A. Rockett, G. Martin, Wook Kim, Ziwei Fan and Wonsuck Kim. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, Solid-State Electronics and Philosophical Magazine B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Andrei E. Botchkarev

Andrei E. Botchkarev's Hit Papers

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