M.-F. Li

1.0k citations

30 papers · 884 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 29
- Semiconductor materials and devices 27
- Advancements in Semiconductor Devices and Circuit Design 21
- Ferroelectric and Negative Capacitance Devices 13
- Integrated Circuits and Semiconductor Failure Analysis 9
- Radio Frequency Integrated Circuit Design 2
Atomic and Molecular Physics, and Optics 5
- Semiconductor materials and interfaces 5

Co-authors: Dim‐Lee Kwong (19 shared papers)H.Y. Yu (12 shared papers)Yee‐Chia Yeo (8 shared papers)Albert Chin (11 shared papers)Chunxiang Zhu (11 shared papers)D.S.H. Chan (12 shared papers)X.P. Wang (7 shared papers)Anyan Du (3 shared papers)
Journals: IEEE Electron Device Letters (10 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)Journal of The Electrochemical Society (1 paper)Thin Solid Films (1 paper)
Partner nations: Singapore United States China

In The Last Decade

M.-F. Li

29 papers receiving 848 citations

Peers

Countries citing papers authored by M.-F. Li

Since Specialization

Citations

This map shows the geographic impact of M.-F. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-F. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-F. Li more than expected).

Fields of papers citing papers by M.-F. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-F. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-F. Li. The network helps show where M.-F. Li may publish in the future.

Co-authors

The 25 scholars most cited alongside M.-F. Li, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.-F. Li Line = papers co-authored together M.-F. Li links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 30 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide IEEE Electron Device Letters ·S. Zhu, Kevin J. Chen, M.-F. Li, S.J. Lee, Jagar Singh, Chunxiang Zhu, Anyan Du, Ching‐Hsuan Tung, Albert Chin, Dim‐Lee Kwong	2004	172
2	Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric National University of Singapore ·Chen Shen, M.-F. Li, C. E. Foo, Tianzhi Yang, Daming Huang, Andrew Yap, Ganesh S. Samudra, Yee‐Chia Yeo	2006	139
3	A fast measurement technique of MOSFETI/sub d/-V/sub g/ characteristics IEEE Electron Device Letters ·Chen Shen, M.-F. Li, X.P. Wang, Yee‐Chia Yeo, Dim‐Lee Kwong	2005	56
4	Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering Applied Physics Letters ·Jinfeng Kang, H.Y. Yu, Chao Ren, M.-F. Li, D.S.H. Chan, Hang Hu, H.F. Lim, W.D. Wang, D. Gui, Dim‐Lee Kwong	2004	55
5	Thermally Robust HfN Metal as a Promising Gate Electrode for Advanced MOS Device Applications IEEE Transactions on Electron Devices ·H.Y. Yu, M.-F. Li, Dim‐Lee Kwong	2004	52
6	Wide $V_{\rm fb}$ and $V_{\rm th}$ Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics IEEE Electron Device Letters ·X.P. Wang, H.Y. Yu, M.-F. Li, Chunxiang Zhu, S. Biesemans, Albert Chin, Yichuang Sun, Yuan Ping Feng, Andy Eu-Jin Lim, Yee‐Chia Yeo, Wei Yip Loh, G. Q. Lo, Dim‐Lee Kwong	2007	51
7	Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in<tex>$hbox TaN/SiO_2$</tex>Gate Stack IEEE Electron Device Letters ·C. Ren, H.Y. Yu, Jinfeng Kang, Yunfei Hou, M.-F. Li, W.D. Wang, D.S.H. Chan, D. L. Kwong	2004	51
8	A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT<tex>$hbox HfO_2$</tex>by Using HfN Replacement Gate IEEE Electron Device Letters ·C. Ren, H.Y. Yu, Jinfeng Kang, X.P. Wang, Huan Ma, Yee‐Chia Yeo, D.S.H. Chan, M.-F. Li, Dim‐Lee Kwong	2004	47
9	3D GOI CMOSFETs with novel IrO/sub 2/2(Hf) dual gates and high-K dielectric on 1P6M-0.18μm-CMOS NPARC ·Decai Yu, Albert Chin, C.C. Laio, C.F. Lee, Chien‐Fu Cheng, W.J. Chen, Chunxiang Zhu, M.-F. Li, Won Jong Yoo, S. P. McAlister, Dim‐Lee Kwong	2005	27
10	Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics Ching-Ying Huang, Mingyi Yang, Albert Chin, W.J. Chen, Chunxiang Zhu, B.J. Cho, M.-F. Li, Dim‐Lee Kwong	2004	24
11	Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference DU Yua, Albert Chin, Chao‐Hsin Wu, M.-F. Li, Chunxiang Zhu, S.J. Wang, Won Jong Yoo, B.F. Hung, S. P. McAlister	2006	20
12	Strain-induced very low noise RF MOSFETs on flexible plastic substrate National University of Singapore ·Hsuan‐Ling Kao, Albert Chin, B.F. Hung, J.M. Lai, C.F. Lee, M.-F. Li, G.S. Samudra, Chunxiang Zhu, Zhihu Xia, X.Y. Liu, Jin-A Kang	2005	19
13	Work function tuning of metal nitride electrodes for advanced CMOS devices Thin Solid Films ·C. Ren, B.B. Faizhal, D.S.H. Chan, M.-F. Li, Yee‐Chia Yeo, A. D. Trigg, N. Balasubramanian, Dim‐Lee Kwong	2005	17
14	Ultrathin HfO[sub 2](EOT<0.75 nm) Gate Stack with TaN∕HfN Electrodes Fabricated Using a High-Temperature Process Electrochemical and Solid-State Letters ·Jinfeng Kang, H.Y. Yu, Chunyu Ren, M.-F. Li, D.S.H. Chan, Xinyu Liu, Dim‐Lee Kwong	2005	16
15	Improved electrical and reliability Characteristics of HfN--HfO/sub 2/-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first Process IEEE Electron Device Letters ·Jinfeng Kang, H.Y. Yu, C. Ren, X.P. Wang, M.-F. Li, D.S.H. Chan, Yee‐Chia Yeo, N. Sa, Hong Yang, X.Y. Liu, R.Q. Han, Dim‐Lee Kwong	2005	15
16	High work function Ir/sub x/Si gates on HfAlON p-MOSFETs IEEE Electron Device Letters ·Chao‐Hsin Wu, Decai Yu, Albert Chin, S.J. Wang, M.-F. Li, Chunxiang Zhu, B.F. Hung, S. P. McAlister	2006	15
17	Physical and electrical properties of lanthanide-incorporated tantalum nitride for n-channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters ·Chao Ren, D.S.H. Chan, Xiaopeng Wang, B.B. Faizhal, M.-F. Li, Yee‐Chia Yeo, A. D. Trigg, Ajay Agarwal, N. Balasubramanian, Jing Pan, Poh Chong Lim, C. H. A. Huan, Dim‐Lee Kwong	2005	14
18	Investigations of Conduction Mechanisms of the Self-Rectifying n⁺Si-HfO₂–Ni RRAM Devices IEEE Transactions on Electron Devices ·Dong-Yi Lu, Yadong Zhao, Tran Xuan Anh, Yu Hong Yu, Daming Huang, Yinyin Lin, Shijin Ding, Pengfei Wang, M.-F. Li	2014	13
19	Charge Trapping and Breakdown Mechanism in HfAlO/TaN Gate Stack Analyzed Using Carrier Separation IEEE Transactions on Device and Materials Reliability ·Wei Yip Loh, B.J. Cho, M. S. Joo, M.-F. Li, D.S.H. Chan, S. Mathew, D. L. Kwong	2004	13
20	Scalability and Reliability Characteristics of CVD HfO[sub 2] Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications Journal of The Electrochemical Society ·Jinfeng Kang, H.Y. Yu, Chao Ren, N. Sa, Hong Yang, M.-F. Li, D.S.H. Chan, X. Y. Liu, R.Q. Han, Dim‐Lee Kwong	2007	11

About M.-F. Li

M.-F. Li is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Biomedical Engineering, having authored 30 papers that have together received 884 indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Ferroelectric and Negative Capacitance Devices (13 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Semiconductor materials and interfaces (5 papers), Radio Frequency Integrated Circuit Design (2 papers), Copper Interconnects and Reliability (2 papers) and Metal and Thin Film Mechanics (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (860 citations), Atomic and Molecular Physics, and Optics (169 citations), Materials Chemistry (155 citations), Mechanics of Materials (64 citations) and Electronic, Optical and Magnetic Materials (44 citations). M.-F. Li has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Dim‐Lee Kwong, H.Y. Yu, Yee‐Chia Yeo, Albert Chin, Chunxiang Zhu, D.S.H. Chan, X.P. Wang, Anyan Du, Daming Huang and Ching‐Hsuan Tung. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of The Electrochemical Society and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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