Anyan Du

1.6k citations

56 papers · 1.3k · h-index 17

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
- Ferroelectric and Negative Capacitance Devices
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 51
- Semiconductor materials and devices 35
- Advancements in Semiconductor Devices and Circuit Design 26
- Integrated Circuits and Semiconductor Failure Analysis 12
- Ferroelectric and Negative Capacitance Devices 8
Atomic and Molecular Physics, and Optics 16
- Semiconductor materials and interfaces 9
- Semiconductor Quantum Structures and Devices 4

Co-authors: Dim‐Lee Kwong (14 shared papers)Chunxiang Zhu (14 shared papers)Albert Chin (13 shared papers)S.J. Lee (5 shared papers)Jagar Singh (5 shared papers)Rong Zhao (2 shared papers)Tow Chong Chong (3 shared papers)Ching‐Hsuan Tung (5 shared papers)
Journals: IEEE Electron Device Letters (12 papers)Journal of Applied Physics (4 papers)Thin Solid Films (4 papers)Applied Physics Letters (3 papers)Solid-State Electronics (3 papers)
Partner nations: Singapore China United States

In The Last Decade

Anyan Du

53 papers receiving 1.3k citations

Peers

Countries citing papers authored by Anyan Du

Since Specialization

Citations

This map shows the geographic impact of Anyan Du's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anyan Du with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anyan Du more than expected).

Fields of papers citing papers by Anyan Du

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anyan Du. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anyan Du. The network helps show where Anyan Du may publish in the future.

Co-authors

The 25 scholars most cited alongside Anyan Du, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Anyan Du Line = papers co-authored together Anyan Du links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 56 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Phase change random access memory cell with superlattice-like structure Applied Physics Letters ·Tow Chong Chong, Luping Shi, Rong Zhao, P.K. Tan, J. M. Li, H. K. Lee, X. S. Miao, Anyan Du, Chia‐Hsiang Tung	2006	213
2	N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide IEEE Electron Device Letters ·S. Zhu, Kevin J. Chen, M.-F. Li, S.J. Lee, Jagar Singh, Chunxiang Zhu, Anyan Du, Ching‐Hsuan Tung, Albert Chin, Dim‐Lee Kwong	2004	169
3	A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation IEEE Electron Device Letters ·Nan Wu, Q. Zhang, Chunxiang Zhu, D.S.H. Chan, Anyan Du, N. Balasubramanian, M.F. Li, Albert Chin, J.K.O. Sin, Dim‐Lee Kwong	2004	96
4	Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors Applied Physics Letters ·Kah‐Wee Ang, King-Jien Chui, Vladimir Bliznetsov, Chih-Hang Tung, Anyan Du, Narayanan Balasubramanian, Ganesh S. Samudra, Ming Fu Li, Yee‐Chia Yeo	2005	90
5	Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode IEEE Electron Device Letters ·Shiyang Zhu, H.Y. Yu, S. J. Whang, J.H. Chen, Chen Shen, Chunxiang Zhu, S.J. Lee, M.F. Li, D.S.H. Chan, Won Jong Yoo, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, Dim‐Lee Kwong	2004	88
6	Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate IEEE Electron Device Letters ·Shiyang Zhu, Rui Li, S.J. Lee, M.F. Li, Anyan Du, Jagar Singh, Chunxiang Zhu, Albert Chin, Dim‐Lee Kwong	2005	83
7	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices IEEE Electron Device Letters ·H.Y. Yu, H.F. Lim, J.H. Chen, M.F. Li, Chunxiang Zhu, Ching‐Hsuan Tung, Anyan Du, W.D. Wang, Dongzhi Chi, Dim‐Lee Kwong	2003	67
8	Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions National University of Singapore ·Kah‐Wee Ang, King Jien Chui, V. Blimetsov, Anyan Du, N. Balasubramanian, Ming Fu Li, Ganesh S. Samudra, Yee-Chia Yee	2005	59
9	Crystalline Amorphous Semiconductor Superlattice Physical Review Letters ·T. C. Chong, Lu Shi, X.Q. Wei, Rong Zhao, H. K. Lee, Ping Yang, Anyan Du	2008	57
10	Evidence and Understanding of ALD<tex>$hbox HfO_2hbox --hbox Al_2hbox O_3$</tex>Laminate MIM Capacitors Outperforming Sandwich Counterparts IEEE Electron Device Letters ·Shi‐Jin Ding, Hang Hu, Chunxiang Zhu, M.F. Li, S.J. Kim, B.J. Cho, D.S.H. Chan, Mingbin Yu, Anyan Du, Albert Chin, Dim‐Lee Kwong	2004	33
11	Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode Solid-State Electronics ·Shiyang Zhu, H.Y. Yu, J.D. Chen, S. J. Whang, J.H. Chen, Chen Shen, Chunxiang Zhu, S.J. Lee, M.F. Li, D.S.H. Chan, Won Jong Yoo, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, Dim‐Lee Kwong	2004	28
12	Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement National University of Singapore ·T. Y. Liow, K. M. Tan, R. Lee, Anyan Du, C. H. Tung, Ganesh S. Samudra, Won Jong Yoo, N. Balasubramanian, Yee‐Chia Yeo	2006	28
13	Joining Copper Oxide Nanotube Arrays Driven by the Nanoscale Kirkendall Effect Small ·Shu Rong Chun, Wardhana Aji Sasangka, Mei Zhen Ng, Qing Liu, Anyan Du, Jie Zhu, C. M. Ng, Zhiqiang Liu, Sing Yang Chiam, Chee Lip Gan	2013	25
14	Mobility Enhancement in TaN Metal-Gate MOSFETs Using Tantalum Incorporated HfO<tex>$_2$</tex>Gate Dielectric IEEE Electron Device Letters ·Yu Xi, Chun Zhu, M.F. Li, Albert Chin, Mingbin Yu, Anyan Du, Dim‐Lee Kwong	2004	22
15	Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures Applied Physics Letters ·Tsung-Yang Liow, Kian-Ming Tan, Yee‐Chia Yeo, Ajay Agarwal, Anyan Du, Chih-Hang Tung, Narayanan Balasubramanian	2005	21
16	Ge diffusion and solid phase epitaxy growth to form Si1−xGex/Si and Ge on insulator structure Thin Solid Films ·Fei Gao, S.J. Lee, S. Balakumar, Anyan Du, Yong-Lim Foo, Dim‐Lee Kwong	2005	18
17	High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric National University of Singapore ·Xiongfei Yu, Chunxiang Zhu, X.P. Wang, M.F. Li, Albert Chin, Anyan Du, W.D. Wang, Dim-Lee Kwong	2004	17
18	50 nm Silicon-On-Insulator N-MOSFET Featuring Multiple Stressors: Silicon-Carbon Source/Drain Regions and Tensile Stress Silicon Nitride Liner National University of Singapore ·Kah‐Wee Ang, King Jien Chui, Hoong Chor Chin, Yee‐Loo Foo, Anyan Du, (unknown), M.-F. Li, Ganesh Samudra, N. Balasubramanian, Yee‐Chia Yeo	2006	15
19	Correlation of structural and magnetic properties of ferromagnetic Mn-implanted Si1−xGex films Journal of Applied Physics ·Vladimir I. Fal’ko, K. L. Teo, T. Liew, Tow Chong Chong, T. Liu, Andrew T. S. Wee, Anyan Du, M. Stoffel, Oliver G. Schmidt	2008	14
20	Zinc-Blende Structure of CrTe Epilayers Grown on GaAs IEEE Transactions on Magnetics ·M. G. Sreenivasan, K. L. Teo, M. B. A. Jalil, T. Liew, T. C. Chong, Anyan Du	2006	14

About Anyan Du

Anyan Du is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 56 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Semiconductor materials and interfaces (9 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Nanowire Synthesis and Applications (7 papers), Copper Interconnects and Reliability (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (404 citations), Materials Chemistry (493 citations), Electronic, Optical and Magnetic Materials (138 citations) and Polymers and Plastics (73 citations). Anyan Du has collaborated with scholars based in Singapore, China and United States. Frequent co-authors include Dim‐Lee Kwong, Chunxiang Zhu, Albert Chin, S.J. Lee, Jagar Singh, Rong Zhao, Tow Chong Chong, Ching‐Hsuan Tung, P.K. Tan and Luping Shi. Their work appears in journals such as IEEE Electron Device Letters, Journal of Applied Physics, Thin Solid Films, Applied Physics Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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