Yi Pei

1.5k citations

59 papers · 1.3k · h-index 20

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 59
- GaN-based semiconductor devices and materials 59
Electrical and Electronic Engineering 52
- Semiconductor materials and devices 31
- Radio Frequency Integrated Circuit Design 20
- Silicon Carbide Semiconductor Technologies 14
- Advancements in Semiconductor Devices and Circuit Design 6

Co-authors: Umesh Kumar Mishra (40 shared papers)Steven P. DenBaars (20 shared papers)Stacia Keller (19 shared papers)James S. Speck (11 shared papers)Rongming Chu (12 shared papers)David F. Brown (9 shared papers)Martin Kuball (5 shared papers)Richard J. T. Simms (4 shared papers)
Journals: IEEE Electron Device Letters (11 papers)Applied Physics Letters (10 papers)IEEE Transactions on Electron Devices (4 papers)Japanese Journal of Applied Physics (2 papers)Solid-State Electronics (2 papers)
Partner nations: United States China United Kingdom

In The Last Decade

Yi Pei

58 papers receiving 1.2k citations

Peers

Countries citing papers authored by Yi Pei

Since Specialization

Citations

This map shows the geographic impact of Yi Pei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yi Pei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yi Pei more than expected).

Fields of papers citing papers by Yi Pei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yi Pei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yi Pei. The network helps show where Yi Pei may publish in the future.

Co-authors

The 25 scholars most cited alongside Yi Pei, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yi Pei Line = papers co-authored together Yi Pei links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 59 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method IEEE Transactions on Electron Devices ·Matteo Meneghini, N. Ronchi, Antonio Stocco, Gaudenzio Meneghesso, Umesh Kumar Mishra, Yi Pei, Enrico Zanoni	2011	149
2	Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress IEEE Electron Device Letters ·M. Ťapajna, Richard J. T. Simms, Yi Pei, Umesh Kumar Mishra, Martin Kuball	2010	128
3	Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters ·Man Hoi Wong, Yi Pei, Tomás Palacios, Likun Shen, Arpan Chakraborty, L. McCarthy, Stacia Keller, Steven P. DenBaars	2007	69
4	Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics ·Aaron R. Arehart, A. Sasikumar, Siddharth Rajan, Glen David Via, Brian Poling, B. Winningham, Eric R. Heller, David F. Brown	2012	59
5	The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs IEEE Electron Device Letters ·Roberto Cuerdo, Yi Pei, Z. Chen, Stacia Keller, Steven P. DenBaars, F. Calle, Umesh Kumar Mishra	2009	55
6	Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters ·A. Sasikumar, Aaron R. Arehart, Sara Martin-Horcajo, M. F. Romero, Yi Pei, David F. Brown, Felix Recht, M.A. di Forte-Poisson	2013	51
7	Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz Japanese Journal of Applied Physics ·Yi Pei, Rongming Chu, Nicholas A. Fichtenbaum, Zhe Chen, David F. Brown, Likun Shen, Stacia Keller, Steven P. DenBaars	2007	46
8	Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates IEEE Electron Device Letters ·Yi Pei, Z. Chen, David F. Brown, Stacia Keller, Steven P. DenBaars, Umesh Kumar Mishra	2009	46
9	N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier IEEE Electron Device Letters ·Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L. Swenson, David F. Brown, Stacia Keller, Steven P. DenBaars	2008	43
10	A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters ·Masataka Higashiwaki, Zhe Chen, Rongming Chu, Yi Pei, Stacia Keller, Umesh Kumar Mishra, Nobumitsu Hirose, Toshiaki Matsui	2009	37
11	Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer Applied Physics Letters ·Z. Chen, Yi Pei, Scott A. Newman, Rongming Chu, David F. Brown, Roy B. Chung, Stacia Keller, Steven P. DenBaars	2009	37
12	Next generation defect characterization in nitride HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Aaron R. Arehart, Andrew C. Malonis, Christiane Poblenz, Yi Pei, James S. Speck, Umesh Kumar Mishra, Steven A. Ringel	2011	34
13	Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs IEEE Electron Device Letters ·Yi Pei, Siddharth Rajan, Masataka Higashiwaki, Zhe Chen, Steven P. DenBaars, Umesh Kumar Mishra	2009	31
14	High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation Applied Physics Letters ·Man Hoi Wong, Yi Pei, James S. Speck, Umesh Kumar Mishra	2009	31
15	Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors IEEE Transactions on Electron Devices ·Masataka Higashiwaki, Yi Pei, Rongming Chu, Umesh Kumar Mishra	2011	28
16	Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters ·Drew W. Cardwell, Aaron R. Arehart, Christiane Poblenz, Yi Pei, James S. Speck, Umesh Kumar Mishra, Steven A. Ringel, Jonathan P. Pelz	2012	28
17	Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect Applied Physics Letters ·Z. Chen, Yi Pei, Scott A. Newman, David F. Brown, Roy B. Chung, Stacia Keller, Steven P. DenBaars, Shuji Nakamura	2009	27
18	RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate IEEE Electron Device Letters ·Seshadri K. Kolluri, Yi Pei, Stacia Keller, Steven P. DenBaars, Umesh Kumar Mishra	2009	24
19	Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer IEEE Transactions on Microwave Theory and Techniques ·Chieh Kai Yang, Patrick Roblin, Fabien de Groote, Steven A. Ringel, Siddharth Rajan, Jean Pierre Teyssier, Christiane Poblenz, Yi Pei	2010	23
20	Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications T. Palaciosa, Eric Snow, Yi Pei, A. Chakraborty, Stacia Keller, Steven P. DenBaars, Umesh Kumar Mishra	2006	23

About Yi Pei

Yi Pei is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 59 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (31 papers), Ga2O3 and related materials (20 papers), Radio Frequency Integrated Circuit Design (20 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor Quantum Structures and Devices (8 papers), ZnO doping and properties (6 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (465 citations), Electrical and Electronic Engineering (920 citations), Atomic and Molecular Physics, and Optics (318 citations) and Materials Chemistry (241 citations). Yi Pei has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include Umesh Kumar Mishra, Steven P. DenBaars, Stacia Keller, James S. Speck, Rongming Chu, David F. Brown, Martin Kuball, Richard J. T. Simms, M. Ťapajna and Z. Chen. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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