J.-R. Vaillé

1.3k citations
39 papers · 990 · 1 hit paper · h-index 15

Impact in

Papers in

  • Electrical and Electronic Engineering 27
    • Radiation Effects in Electronics 24
    • Semiconductor materials and devices 10
    • Integrated Circuits and Semiconductor Failure Analysis 9
    • Electrostatic Discharge in Electronics 6
  • Radiation 16
    • Radiation Detection and Scintillator Technologies 14
Co-authors
L. Dusseau (22 shared papers)Federico Ravotti (6 shared papers)Pedro García (1 shared paper)J. Boch (13 shared papers)Frédéric Saigné (17 shared papers)M. Gläser (5 shared papers)Ronald D. Schrimpf (4 shared papers)E. Lorfèvre (6 shared papers)
Journals
IEEE Transactions on Nuclear Science (26 papers)Microelectronics Reliability (3 papers)Journal of Applied Physics (2 papers)Radioprotection (1 paper)Fusion Engineering and Design (1 paper)
Partner nations
FranceUnited StatesSwitzerland

In The Last Decade

J.-R. Vaillé

38 papers receiving 966 citations

J.-R. Vaillé's Hit Papers

Optically Stimulated Luminescence Dosimetry 2003 · 461 citations
4610+7+15Years since publication100200300400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

  • it has ≥500 total citations;
  • it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
  • it reaches the top citation threshold in at least one of its specific research topics.
  1. 2003 Elsevier eBooks

Peers

J.-R. Vaillé
Comparison fields: 5 of 78
  • Radiation 369
  • Ceramics and Composites 71
  • Hardware and Architecture 57
  • Atmospheric Science 131
  • Electrical and Electronic Engineering 413
Replace L. Dusseau with:
L. Dusseau France
Federico Ravotti Switzerland
Nadia Lo Bue Italy
C. H. Tsao United States
Hazal Goksu Germany
Niyazi Meriç Türkiye
F. Gasparoni Italy
J. Zimmerman United States
B.G. Markey United States
H. Michaelis Germany
J.-R. Vaillé relative to L. Dusseau France L. Dusseau's profile →
Citations per field
00.5×1.5×
L. Dusseau · 1×
Citations per year

Countries citing papers authored by J.-R. Vaillé

Since Specialization
Citations

This map shows the geographic impact of J.-R. Vaillé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-R. Vaillé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-R. Vaillé more than expected).

Fields of papers citing papers by J.-R. Vaillé

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-R. Vaillé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-R. Vaillé. The network helps show where J.-R. Vaillé may publish in the future.

Co-authors

The 25 scholars most cited alongside J.-R. Vaillé, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.-R. Vaillé Line = papers co-authored together J.-R. Vaillé links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 39 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Optically Stimulated Luminescence Dosimetry
Elsevier eBooks ·D. Benoit, J.-R. Vaillé, Federico Ravotti, Pedro García, L. Dusseau
Hit paper breakdown →		2003461
2
Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER
IEEE Transactions on Nuclear Science ·T. Mérelle, H. Chabane, J.M. Palau, K. Castellani-Coulié, F. Wrobel, F. Saigne, B. Sagnes, J. Boch, J.-R. Vaillé, Gilles Gasiot, P. Roche, M.-C. Palau, T. Carrière
200560
3
Real-time fibre optic radiation dosimeters for nuclear environment monitoring around thermonuclear reactors
Fusion Engineering and Design ·Alberto Fernández, B. Brichard, Sinéad O’Keeffe, Colin Fitzpatrick, Elfed Lewis, J.-R. Vaillé, L. Dusseau, David A. Jackson, Federico Ravotti, M. Gläser, Hazem El-Rabii
200755
4
Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments
IEEE Transactions on Nuclear Science ·J. Boch, F. Saigne, Ronald D. Schrimpf, J.-R. Vaillé, L. Dusseau, S. Ducret, M. Bernard, E. Lorfèvre, C. Chatry
200536
5
Conception of an integrated sensor for the radiation monitoring of the CMS experiment at the large hadron collider
IEEE Transactions on Nuclear Science ·Federico Ravotti, M. Gläser, M. Moll, K. Idri, J.-R. Vaillé, H. Prévost, L. Dusseau
200436
6
Quality control of intensity modulated radiation therapy with optically stimulated luminescent films
IEEE Transactions on Nuclear Science ·K. Idri, Lore Santoro, E. Charpiot, J. Hérault, Alessandro Martins da Costa, N. Aillères, R. Delard, J.-R. Vaillé, J. Fesquet, L. Dusseau
200432
7
Impact of Total Ionizing Dose on the Analog Single Event Transient Sensitivity of a Linear Bipolar Integrated Circuit
IEEE Transactions on Nuclear Science ·M. F. Bernard, L. Dusseau, S. Büchner, Dale McMorrow, R. Ecoffet, J. Boch, J.-R. Vaillé, Ronald D. Schrimpf, Kenneth A. LaBel
200730
8
An integrated sensor using optically stimulated luminescence for in-flight dosimetry
IEEE Transactions on Nuclear Science ·L. Dusseau, D. Plattard, J.-R. Vaillé, G. Polge, G. Ranchoux, F. Saigne, J. Fesquet, R. Ecoffet, J. Gasiot
200026
9
Investigation and Analysis of LM124 Bipolar Linear Circuitry Response Phenomenon in Pulsed X-Ray Environment
IEEE Transactions on Nuclear Science ·Nicolas J.-H. Roche, L. Dusseau, J.-R. Vaillé, Julien Mekki, Y. Gonzalez Velo, S. Perez, J. Boch, Frédéric Saigné, R. Marec, P. Calvel, F. Bezerra, G. Auriel, B. Azaïs
201025
10
Modeling and Investigations on TID-ASETs Synergistic Effect in LM124 Operational Amplifier From Three Different Manufacturers
IEEE Transactions on Nuclear Science ·F. Roig, L. Dusseau, Ani Khachatrian, Nicolas J.-H. Roche, A. Privat, J.-R. Vaillé, J. Boch, Jeffrey H. Warner, F. Saigne, S. Büchner, Dale McMorrow, Paulo F. Ribeiro, G. Auriel, B. Azaïs, R. Marec, P. Calvel, F. Bezerra, R. Ecoffet
201322
11
High-energy particle irradiation of optically stimulated luminescent films at CERN
IEEE Transactions on Nuclear Science ·L. Dusseau, G. Polge, Stefan Mathias, J.-R. Vaillé, Rosine Coq Germanicus, R. Broadhead, B. Camanzi, M. Gläser, Frédéric Saigné, J. Fesquet, J. Gasiot
200117
12
System Level Radiation Characterization of a 1U CubeSat Based on CERN Radiation Monitoring Technology
IEEE Transactions on Nuclear Science ·R. Secondo, Rubén García Alía, P. Peronnard, Markus Brugger, A. Masi, Salvatore Danzeca, A. Merlenghi, Enrico Chesta, J.-R. Vaillé, M. Bernard, L. Dusseau
201815
13
Online dosimetry based on optically stimulated luminescence materials
IEEE Transactions on Nuclear Science ·J.-R. Vaillé, Federico Ravotti, Pierre García, M. Gläser, Sammy Sidney Rocha Matías, K. Idri, J. Boch, E. Lorfevre, P.J. McNulty, Frédéric Saigné, L. Dusseau
200514
14
Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $\mu$m Inverter Chain
IEEE Transactions on Nuclear Science ·D. Truyen, J. Boch, B. Sagnes, J.-R. Vaillé, Nicolas Renaud, E. Leduc, M. Briet, Chun-Huat Heng, S. Mouton, Frédéric Saigné
200814
15
Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator
IEEE Transactions on Nuclear Science ·M. F. Bernard, L. Dusseau, J. Boch, J.-R. Vaillé, Frédéric Saigné, Ronald D. Schrimpf, E. Lorfèvre, Jean‐Pierre David
200614
16
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
Microelectronics Reliability ·A. Michez, J. Boch, S. Dhombres, Frédéric Saigné, Antoine Touboul, J.-R. Vaillé, L. Dusseau, E. Lorfèvre, R. Ecoffet
201311
17
A New Technique Based on Convolutional Neural Networks to Measure the Energy of Protons and Electrons With a Single Timepix Detector
IEEE Transactions on Nuclear Science ·Marine Ruffenach, S. Bourdarie, B. Bergmann, Stefan Gohl, Julien Mekki, J.-R. Vaillé
202110
18
Time-resolved photoluminescence and optically stimulated luminescence measurements of picosecond-excited SrS:Ce,Sm phosphor
Journal of Applied Physics ·Federico Ravotti, David M. Benoit, Pierre Lefèbvre, P. Valvin, J.-R. Vaillé, L. Dusseau, J. Fesquet, J. Gasiot
20079
19
Effect of Ion Energy on Power MOSFET's Oxide Reliability
IEEE Transactions on Nuclear Science ·Mehdi Naceur, Antoine Touboul, J.-R. Vaillé, E. Lorfevre, F. Bezerra, G. Chaumont, F. Saigne
20129
20
Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model
Microelectronics Reliability ·Karima Guetarni, Antoine Touboul, J. Boch, L. Foro, A. Privat, A. Michez, J.-R. Vaillé, Frédéric Saigné
20139

About J.-R. Vaillé

J.-R. Vaillé is a scholar working on Electrical and Electronic Engineering, Radiation, Nuclear and High Energy Physics, Materials Chemistry and Pulmonary and Respiratory Medicine, having authored 39 papers that have together received 990 indexed citations. Recurring topics across this work include Radiation Effects in Electronics (24 papers), Radiation Detection and Scintillator Technologies (14 papers), Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Electrostatic Discharge in Electronics (6 papers), Particle Detector Development and Performance (6 papers), Radiation Therapy and Dosimetry (5 papers) and Luminescence Properties of Advanced Materials (5 papers). The work is most often cited by research in Radiation (369 citations), Ceramics and Composites (71 citations), Hardware and Architecture (57 citations), Atmospheric Science (131 citations) and Electrical and Electronic Engineering (413 citations). J.-R. Vaillé has collaborated with scholars based in France, United States and Switzerland. Frequent co-authors include L. Dusseau, Federico Ravotti, Pedro García, J. Boch, Frédéric Saigné, M. Gläser, Ronald D. Schrimpf, E. Lorfèvre, R. Ecoffet and F. Wrobel. Their work appears in journals such as IEEE Transactions on Nuclear Science, Microelectronics Reliability, Journal of Applied Physics, Radioprotection and Fusion Engineering and Design.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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