T. D. Lin

1.1k citations

38 papers · 971 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 38
- Semiconductor materials and devices 37
- Advancements in Semiconductor Devices and Circuit Design 14
- Ferroelectric and Negative Capacitance Devices 7
- Integrated Circuits and Semiconductor Failure Analysis 4
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 14

Co-authors: J. Kwo (30 shared papers)Minghwei Hong (21 shared papers)Mao Lin Huang (10 shared papers)Yu‐Cheng Chang (2 shared papers)H. C. Chiu (12 shared papers)T. B. Wu (1 shared paper)Pei-Ching Chang (13 shared papers)Yen‐Chung Chang (4 shared papers)
Journals: Applied Physics Letters (15 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (4 papers)Microelectronic Engineering (3 papers)Journal of Crystal Growth (3 papers)MRS Bulletin (1 paper)
Partner nations: Taiwan United States Belgium

In The Last Decade

T. D. Lin

37 papers receiving 952 citations

Peers

Countries citing papers authored by T. D. Lin

Since Specialization

Citations

This map shows the geographic impact of T. D. Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. D. Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. D. Lin more than expected).

Fields of papers citing papers by T. D. Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. D. Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. D. Lin. The network helps show where T. D. Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside T. D. Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. D. Lin Line = papers co-authored together T. D. Lin links everyone, so they are left out of the graph.

All Works

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#	Work
1	Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructure Applied Physics Letters ·Mao Lin Huang, Yu‐Cheng Chang, Chia-Yuan Chang, T. D. Lin, J. Kwo, T. B. Wu, Minghwei Hong	2006	170
2	High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics Applied Physics Letters ·T. D. Lin, H. C. Chiu, Pei-Ching Chang, L. T. Tung, C. P. Chen, Minghwei Hong, J. Kwo, Wilman Tsai	2008	113
3	Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As Applied Physics Letters ·Chia-Yuan Chang, Yen-Lung Chiou, Yu‐Cheng Chang, K.-Y. Lee, T. D. Lin, Tai‐Bor Wu, Minghwei Hong, J. Raynien Kwo	2006	108
4	Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters Applied Physics Letters ·Y. C. Chang, Mao Lin Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, Minghwei Hong, J. Kwo, T. S. Lay	2008	99
5	Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs Applied Physics Letters ·Mao Lin Huang, Yen‐Chung Chang, Y. H. Chang, T. D. Lin, J. Kwo, Minghwei Hong	2009	64
6	MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN Journal of Crystal Growth ·Yen‐Chung Chang, Y. J. Lee, Y.N. Chiu, T. D. Lin, Su‐Ying Wu, H. C. Chiu, J. Kwo, Y.H. Wang	2007	49
7	InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS MRS Bulletin ·Minghwei Hong, J. Kwo, T. D. Lin, Mao Lin Huang	2009	33
8	Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition Applied Physics Letters ·Y. H. Chang, Chao‐An Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi	2012	30
9	Ga 2 O 3 ( Gd 2 O 3 ) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices Applied Physics Letters ·L. K. Chu, T. D. Lin, Mao Lin Huang, R. L. Chu, C. C. Chang, J. Kwo, Minghwei Hong	2009	28
10	Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion Applied Physics Letters ·J. F. Zheng, Wilman Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, Minghwei Hong, J. Kwo, Sharon Cui	2007	27
11	High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 Applied Physics Letters ·T. D. Lin, Wen-Hsin Chang, R. L. Chu, Y. C. Chang, Y. H. Chang, M. Y. Lee, Panuk Hong, Min‐Cheng Chen	2013	26
12	Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation Applied Physics Letters ·Chao‐An Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, Wen-Hsin Chang, Yen‐Chung Chang, W.-E. Wang	2011	24
13	Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers Solid-State Electronics ·Li‐Kang Chu, R. L. Chu, T. D. Lin, Wen-Chien Lee, Chao‐An Lin, M. L. Huang, Y.J. Lee, J. Kwo	2010	23
14	Molecular beam epitaxy grown Ga2O3(Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·C. H. Lee, T. D. Lin, L. T. Tung, Mao Lin Huang, Minghwei Hong, J. Kwo	2008	20
15	Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4 × 6 surface with trimethylaluminum and water as precursors Applied Physics Letters ·M. L. Huang, Y. H. Chang, T. D. Lin, Hsuan-Yin Lin, Y. T. Liu, T.-W. Pi, Minghwei Hong, J. Kwo	2012	16
16	Advanced passivation techniques for Si solar cells with high-κ dielectric materials Applied Physics Letters ·Huijuan Geng, T. D. Lin, Ayra Jagadhamma Letha, H. L. Hwang, Fedor A. Kyznetsov, Tamara P. Smirnova, Аndrey А. Saraev, Vasily V. Kaichev	2014	16
17	Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition Applied Physics Letters ·Minghwei Hong, Hsien-Wen Wan, Keng-Yung Lin, Y.-C. Chang, Ming‐Hong Chen, Y.H. Lin, T. D. Lin, T. W. Pi	2017	16
18	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process Microelectronic Engineering ·Chun-Min Fu, Y.H. Lin, Wen-Chien Lee, T. D. Lin, R. L. Chu, L. K. Chu, Pei-Ching Chang, M.H. Chen	2015	14
19	Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3∕Ga2O3(Gd2O3)∕In0.2Ga0.8As Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Y. D. Wu, T. D. Lin, T. H. Chiang, Y. C. Chang, H. C. Chiu, Y. J. Lee, Minghwei Hong, Chao‐An Lin	2010	12
20	InGaAs and Ge MOSFETs with high κ dielectrics Microelectronic Engineering ·Wen‐Chung Lee, Pei-Ching Chang, T. D. Lin, Li‐Kang Chu, H. C. Chiu, J. Kwo, Mengting Hong	2010	11

About T. D. Lin

T. D. Lin is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Surfaces, Coatings and Films, having authored 38 papers that have together received 971 indexed citations. Recurring topics across this work include Semiconductor materials and devices (37 papers), Electronic and Structural Properties of Oxides (14 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Ga2O3 and related materials (14 papers), Semiconductor materials and interfaces (11 papers), Ferroelectric and Negative Capacitance Devices (7 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers) and Electron and X-Ray Spectroscopy Techniques (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (899 citations), Materials Chemistry (449 citations), Electronic, Optical and Magnetic Materials (175 citations), Atomic and Molecular Physics, and Optics (297 citations) and Surfaces, Coatings and Films (62 citations). T. D. Lin has collaborated with scholars based in Taiwan, United States and Belgium. Frequent co-authors include J. Kwo, Minghwei Hong, Mao Lin Huang, Yu‐Cheng Chang, H. C. Chiu, T. B. Wu, Pei-Ching Chang, Yen‐Chung Chang, Wilman Tsai and Y. C. Chang. Their work appears in journals such as Applied Physics Letters, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Microelectronic Engineering, Journal of Crystal Growth and MRS Bulletin.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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