T. D. Lin

1.1k citations

37 papers · 927 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 37
- Semiconductor materials and devices 36
- Advancements in Semiconductor Devices and Circuit Design 13
- Ferroelectric and Negative Capacitance Devices 7
- Integrated Circuits and Semiconductor Failure Analysis 4
Materials Chemistry 16
- Electronic and Structural Properties of Oxides 14

Co-authors: J. Kwo (30 shared papers)M. Hong (21 shared papers)Mao Lin Huang (9 shared papers)Yu‐Cheng Chang (2 shared papers)H. C. Chiu (12 shared papers)T. B. Wu (1 shared paper)Pei-Ching Chang (12 shared papers)Yen‐Chung Chang (4 shared papers)
Journals: Applied Physics Letters (15 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (4 papers)Journal of Crystal Growth (3 papers)Microelectronic Engineering (3 papers)Solid-State Electronics (1 paper)
Partner nations: Taiwan United States Belgium

In The Last Decade

T. D. Lin

37 papers receiving 909 citations

Peers

Countries citing papers authored by T. D. Lin

Since Specialization

Citations

This map shows the geographic impact of T. D. Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. D. Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. D. Lin more than expected).

Fields of papers citing papers by T. D. Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. D. Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. D. Lin. The network helps show where T. D. Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside T. D. Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. D. Lin Line = papers co-authored together T. D. Lin links everyone, so they are left out of the graph.

All Works

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#	Work
1	Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructure Applied Physics Letters ·Mao Lin Huang, Yu‐Cheng Chang, Chia-Yuan Chang, T. D. Lin, J. Kwo, T. B. Wu, M. Hong	2006	163
2	High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics Applied Physics Letters ·T. D. Lin, H. C. Chiu, Pei-Ching Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, Wilman Tsai, Y. C. Wang	2008	103
3	Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As Applied Physics Letters ·Chia-Yuan Chang, Yen-Lung Chiou, Yu‐Cheng Chang, K.-Y. Lee, T. D. Lin, Tai‐Bor Wu, Minghwei Hong, J. Kwo	2006	101
4	Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters Applied Physics Letters ·Y. C. Chang, Mao Lin Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, Chao-Sung Liao, K. Y. Cheng	2008	95
5	Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs Applied Physics Letters ·Mao Lin Huang, Yen‐Chung Chang, Y. H. Chang, T. D. Lin, J. Kwo, M. Hong	2009	62
6	MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN Journal of Crystal Growth ·Yen‐Chung Chang, Y. J. Lee, Y.N. Chiu, T. D. Lin, Su‐Ying Wu, H. C. Chiu, J. Kwo, Y.H. Wang, M. Hong	2007	49
7	InGaAs Metal Oxide Semiconductor Devices with Ga₂O₃(Gd₂O₃) High-κ Dielectrics for Science and Technology beyond Si CMOS MRS Bulletin ·M. Hong, J. Kwo, T. D. Lin, Mao Lin Huang	2009	32
8	Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition Applied Physics Letters ·Y. H. Chang, Chao‐An Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo, M. Hong	2012	29
9	Ga 2 O 3 ( Gd 2 O 3 ) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices Applied Physics Letters ·L. K. Chu, T. D. Lin, Mao Lin Huang, R. L. Chu, C. C. Chang, J. Kwo, M. Hong	2009	27
10	Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion Applied Physics Letters ·J. F. Zheng, Wilman Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, M. Hong, J. Kwo, Sharon Cui, T. P.	2007	27
11	High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 Applied Physics Letters ·T. D. Lin, Wen-Hsin Chang, R. L. Chu, Y. C. Chang, Y. H. Chang, M. Y. Lee, Panuk Hong, Min‐Cheng Chen, J. Kwo, M. Hong	2013	25
12	Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers Solid-State Electronics ·Li‐Kang Chu, R. L. Chu, T. D. Lin, W.C. Lee, Chao‐An Lin, M. L. Huang, Y.J. Lee, J. Kwo, M. Hong	2010	23
13	Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation Applied Physics Letters ·Chao‐An Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, Wen-Hsin Chang, Yen‐Chung Chang, W.-E. Wang, J. Dekoster, T. Hoffmann, M. Hong, J. Kwo	2011	23
14	Molecular beam epitaxy grown Ga2O3(Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·C. H. Lee, T. D. Lin, L. T. Tung, Mao Lin Huang, M. Hong, J. Kwo	2008	18
15	Advanced passivation techniques for Si solar cells with high-κ dielectric materials Applied Physics Letters ·Huijuan Geng, T. D. Lin, Ayra Jagadhamma Letha, H. L. Hwang, Fedor A. Kyznetsov, T. P. Smirnova, Аndrey А. Saraev, В. В. Каичев	2014	16
16	Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4 × 6 surface with trimethylaluminum and water as precursors Applied Physics Letters ·M. L. Huang, Y. H. Chang, T. D. Lin, Hsuan-Yin Lin, Y. T. Liu, T.-W. Pi, M. Hong, J. Kwo	2012	15
17	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process Microelectronic Engineering ·Chun-Min Fu, Y.H. Lin, W.C. Lee, T. D. Lin, R. L. Chu, L. K. Chu, Pei-Ching Chang, M.H. Chen, W.J. Hsueh, Sike Chen, Gail J. Brown, J.‐I. Chyi, J. Kwo, M. Hong	2015	14
18	Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition Applied Physics Letters ·Minghwei Hong, Hsien-Wen Wan, Keng-Yung Lin, Y.-C. Chang, Ming‐Hong Chen, Y.H. Lin, T. D. Lin, T. W. Pi, J. Kwo	2017	12
19	Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3∕Ga2O3(Gd2O3)∕In0.2Ga0.8As Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Y. D. Wu, T. D. Lin, T. H. Chiang, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. Hong, Chao‐An Lin, J. Kwo	2010	12
20	InGaAs and Ge MOSFETs with high κ dielectrics Microelectronic Engineering ·Wen‐Chung Lee, Pei-Ching Chang, T. D. Lin, Li‐Kang Chu, H. C. Chiu, J. Kwo, M. Hong	2010	11

About T. D. Lin

T. D. Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films, having authored 37 papers that have together received 927 indexed citations. Recurring topics across this work include Semiconductor materials and devices (36 papers), Ga2O3 and related materials (14 papers), Electronic and Structural Properties of Oxides (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and interfaces (10 papers), Ferroelectric and Negative Capacitance Devices (7 papers), Electron and X-Ray Spectroscopy Techniques (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (860 citations), Materials Chemistry (439 citations), Electronic, Optical and Magnetic Materials (172 citations), Atomic and Molecular Physics, and Optics (283 citations) and Surfaces, Coatings and Films (62 citations). T. D. Lin has collaborated with scholars based in Taiwan, United States and Belgium. Frequent co-authors include J. Kwo, M. Hong, Mao Lin Huang, Yu‐Cheng Chang, H. C. Chiu, T. B. Wu, Pei-Ching Chang, Yen‐Chung Chang, Wilman Tsai and Y. C. Chang. Their work appears in journals such as Applied Physics Letters, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Journal of Crystal Growth, Microelectronic Engineering and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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