H. Tang

2.1k citations

63 papers · 1.8k · h-index 22

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 61
- GaN-based semiconductor devices and materials 61
Electronic, Optical and Magnetic Materials 37
- Ga2O3 and related materials 37

Co-authors: J. A. Bardwell (41 shared papers)J. B. Webb (25 shared papers)H. Morkoç̌ (11 shared papers)S. Rolfe (17 shared papers)A. Salvador (10 shared papers)J. B. Webb (7 shared papers)A. Botchkarev (11 shared papers)James B. Webb (3 shared papers)
Journals: Applied Physics Letters (15 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (5 papers)Journal of Applied Physics (5 papers)Journal of Crystal Growth (4 papers)Solid-State Electronics (4 papers)
Partner nations: Canada United States United Kingdom

In The Last Decade

H. Tang

61 papers receiving 1.7k citations

Peers

Countries citing papers authored by H. Tang

Since Specialization

Citations

This map shows the geographic impact of H. Tang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Tang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Tang more than expected).

Fields of papers citing papers by H. Tang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Tang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Tang. The network helps show where H. Tang may publish in the future.

Co-authors

The 25 scholars most cited alongside H. Tang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Tang Line = papers co-authored together H. Tang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 63 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures Applied Physics Letters ·Guoqing Xu, A. Salvador, W. Kim, Zhiyuan Fan, Chao Lu, H. Tang, H. Morkoç̌, Gary M. Smith, Michael J. Estes, B. Goldenberg, Wei Yang, S. Krishnankutty	1997	212
2	On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy Journal of Applied Physics ·Wook Kim, A. Botchkarev, A. Salvador, G. Popovici, H. Tang, H. Morkoç̌	1997	153
3	Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy Applied Physics Letters ·J. B. Webb, H. Tang, S. Rolfe, J. A. Bardwell	1999	140
4	Properties of carbon-doped GaN Applied Physics Letters ·H. Tang, J. B. Webb, J. A. Bardwell, S. Raymond, J. Salzman, C. Uzan-Saguy	2001	138
5	Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution Journal of Applied Physics ·J. A. Bardwell, J. B. Webb, H. Tang, J. Fraser, S. Moisa	2001	109
6	Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy Journal of Applied Physics ·F. Hamdani, M. Yeadon, David J. Smith, H. Tang, W. Kim, A. Salvador, A. Botchkarev, J. M. Gibson, A. Y. Polyakov, Marek Skowroński, H. Morkoç̌	1998	82
7	Growth of high mobility GaN by ammonia-molecular beam epitaxy Applied Physics Letters ·H. Tang, James B. Webb	1999	68
8	2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements IEEE Transactions on Nuclear Science ·Shyam M. Khanna, J. B. Webb, H. Tang, A. Houdayer, C. Carlone	2000	64
9	Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·S. P. McAlister, J. A. Bardwell, S. Haffouz, H. Tang	2006	53
10	Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells Applied Physics Letters ·K. C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, H. Morkoç̌	1997	47
11	Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy Journal of Applied Physics ·G. Popovici, Guangda Xu, A. Botchkarev, W. Kim, H. Tang, A. Salvador, H. Morkoç̌, Ronald S. Strange, Jeffrey O. White	1997	47
12	AlGaN/GaN double heterostructure channel modulationdoped field effect transistors (MODFETs) Electronics Letters ·Zhifang Fan, C.C. Lu, A. Botchkarev, H. Tang, A. Salvador, Özgür Aktaş, W. Kim, H. Morkoç	1997	44
13	Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO Applied Physics Letters ·F. Hamdani, A. Botchkarev, H. Tang, W. Kim, H. Morkoç̌	1997	43
14	A simple wet etch for GaN Journal of Electronic Materials ·J. A. Bardwell, Ian G. Foulds, J. B. Webb, H. Tang, J. Fraser, S. Moisa, S. Rolfe	1999	41
15	AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy Solid-State Electronics ·S. Haffouz, H. Tang, J. A. Bardwell, E. M. Hsu, J. B. Webb, S. Rolfe	2005	35
16	Optical properties of GaN/AlGaN multiple quantum well microdisks Applied Physics Letters ·R. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, Baowei Zhang, Lun Dai, H. Tang, A. Botchkarev, W. Kim, H. Morkoç̌	1997	32
17	Analysis of carrier mobility and concentration in Si-doped GaN grown by reactive molecular beam epitaxy Solid-State Electronics ·H. Tang, W. Kim, A. Botchkarev, G. Popovici, F. Hamdani, H. Morkoç̌	1998	32
18	AlGaN/GaN HFET devices on SiC grown by ammonia-MBE with high f _T and f _MAX Electronics Letters ·J. A. Bardwell, Y. Liu, H. Tang, J. B. Webb, S. Rolfe, J. Lapointe	2003	25
19	Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy Journal of Applied Physics ·H. Tang, Z.-Q. Fang, S. Rolfe, J. A. Bardwell, S. Raymond	2010	24
20	Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates Electronics Letters ·P. Chyurlia, F. Sèmond, T. Lester, J. A. Bardwell, S. Rolfe, H. Tang, N. G. Tarr	2010	24

About H. Tang

H. Tang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 63 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (61 papers), Ga2O3 and related materials (37 papers), Semiconductor materials and devices (25 papers), ZnO doping and properties (20 papers), Semiconductor Quantum Structures and Devices (13 papers), Metal and Thin Film Mechanics (6 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Acoustic Wave Resonator Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (931 citations), Materials Chemistry (705 citations), Electrical and Electronic Engineering (819 citations) and Atomic and Molecular Physics, and Optics (344 citations). H. Tang has collaborated with scholars based in Canada, United States and United Kingdom. Frequent co-authors include J. A. Bardwell, J. B. Webb, H. Morkoç̌, S. Rolfe, A. Salvador, J. B. Webb, A. Botchkarev, James B. Webb, G. Popovici and S. Haffouz. Their work appears in journals such as Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal of Applied Physics, Journal of Crystal Growth and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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