A. Botchkarev

6.2k citations

102 papers · 5.0k · 1 hit paper · h-index 41

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 91
- GaN-based semiconductor devices and materials 91
Electrical and Electronic Engineering 66
- Semiconductor materials and devices 54
- Silicon Carbide Semiconductor Technologies 10

Co-authors: H. Morkoç̌ (69 shared papers)H. Morkoç (20 shared papers)A. Salvador (46 shared papers)S. Noor Mohammad (30 shared papers)Özgür Aktaş (25 shared papers)Angus Rockett (4 shared papers)G. Martin (3 shared papers)Z. Fan (16 shared papers)
Journals: Applied Physics Letters (36 papers)Journal of Applied Physics (13 papers)Electronics Letters (6 papers)Solid-State Electronics (6 papers)Philosophical Magazine B (4 papers)
Partner nations: United States Russia Italy

In The Last Decade

A. Botchkarev

99 papers receiving 4.9k citations

A. Botchkarev's Hit Papers

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Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy 1996 · 578 citations

Peers

Countries citing papers authored by A. Botchkarev

Since Specialization

Citations

This map shows the geographic impact of A. Botchkarev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Botchkarev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Botchkarev more than expected).

Fields of papers citing papers by A. Botchkarev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Botchkarev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Botchkarev. The network helps show where A. Botchkarev may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Botchkarev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Botchkarev Line = papers co-authored together A. Botchkarev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 102 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy Applied Physics Letters ·G. Martin, A. Botchkarev, Angus Rockett, H. Morkoç Hit paper breakdown →	1996	578
2	Very low resistance multilayer Ohmic contact to n-GaN Applied Physics Letters ·Zhifang Fan, S. Noor Mohammad, Wook Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç	1996	372
3	Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN Applied Physics Letters ·S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Häller, Z. Fan, S. Noor Mohammad, W. Kim, A. Botchkarev, H. Morkoç	1996	253
4	Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy Applied Physics Letters ·G. Martin, S. Strite, A. Botchkarev, Anchal Agarwal, Angus Rockett, H. Morkoç̌, Walter R. L. Lambrecht, B. Segall	1994	193
5	High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors Applied Physics Letters ·Özgür Aktaş, Z. Fan, S. Noor Mohammad, A. Botchkarev, H. Morkoç̌	1996	181
6	On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy Journal of Applied Physics ·Wook Kim, A. Botchkarev, A. Salvador, G. Popovici, H. Tang, H. Morkoç̌	1997	144
7	Spontaneous polarization and piezoelectric field inGaN/Al0.15Ga0.85Nquantum wells: Impact on the optical spectra Physical review. B, Condensed matter ·R. Cingolani, A. Botchkarev, Hong Tang, H. Morkoç̌, G. Traetta, G. Colı́, M. Lomascolo, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli	2000	143
8	Nature of Mg impurities in GaN Applied Physics Letters ·J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, H. Morkoç̌	1996	126
9	Deep centers in n-GaN grown by reactive molecular beam epitaxy Applied Physics Letters ·Z-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, H. Morkoç	1998	117
10	High transconductance-normally-off GaN MODFETs Electronics Letters ·A. Özgür, W. Kim, Zongjian Fan, A. Botchkarev, A. Salvador, S. Noor Mohammad, B. Sverdlov, H. Morkoç	1995	113
11	Mechanisms of band-edge emission in Mg-doped p-type GaN Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. Sverdlov, A. Botchkarev, H. Morkoç, B. Goldenberg	1996	108
12	Deep level defects in n-type GaN grown by molecular beam epitaxy Applied Physics Letters ·C. D. Wang, L. S. Yu, S. S. Lau, Edward T. Yu, W. Kim, A. Botchkarev, H. Morkoç̌	1998	103
13	Electrical conduction in platinum–gallium nitride Schottky diodes Journal of Applied Physics ·K. Suzue, S. Noor Mohammad, Z. Fan, W. Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç̌	1996	99
14	Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells Applied Physics Letters ·H. S. Kim, J. Y. Lin, H. X. Jiang, Chi‐Wai Chow, A. Botchkarev, H. Morkoç	1998	92
15	Mg-doped p-type GaN grown by reactive molecular beam epitaxy Applied Physics Letters ·Wook Kim, A. Salvador, A. Botchkarev, Özgür Aktaş, S. Noor Mohammad, H. Morcoç	1996	91
16	Microwave performance of AlGaN/GaN inverted MODFET's IEEE Electron Device Letters ·Özgür Aktaş, Z. Fan, A. Botchkarev, S. Noor Mohammad, M. Roth, T. Jenkins, L. Kehias, H. Morkoç̌	1997	87
17	Deep-center hopping conduction in GaN Journal of Applied Physics ·D. C. Look, D. C. Reynolds, W. Kim, Özgür Aktaş, A. Botchkarev, A. Salvador, H. Morkoç̌	1996	84
18	Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy Applied Physics Letters ·F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç̌, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, D. C. Reynolds, D. C. Look, K. R. Evans, C. W. Litton, W. C. Mitchel, P. M. Hemenger	1997	81
19	Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates Applied Physics Letters ·G. Popovici, Wook Kim, A. Botchkarev, Haipeng Tang, H. Morkoç̌, James S. Solomon	1997	81
20	Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN Applied Physics Letters ·K. T. Tsen, D. K. Ferry, A. Botchkarev, B. Sverdlov, A. Salvador, H. Morkoç̌	1998	78

About A. Botchkarev

A. Botchkarev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 102 papers that have together received 5.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (54 papers), Ga2O3 and related materials (43 papers), Semiconductor Quantum Structures and Devices (30 papers), ZnO doping and properties (17 papers), Metal and Thin Film Mechanics (14 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Semiconductor materials and interfaces (10 papers). The work is most often cited by research in Condensed Matter Physics (4.3k citations), Electronic, Optical and Magnetic Materials (1.9k citations), Atomic and Molecular Physics, and Optics (2.0k citations), Electrical and Electronic Engineering (2.4k citations) and Mechanics of Materials (857 citations). A. Botchkarev has collaborated with scholars based in United States, Russia and Italy. Frequent co-authors include H. Morkoç̌, H. Morkoç, A. Salvador, S. Noor Mohammad, Özgür Aktaş, Angus Rockett, G. Martin, Z. Fan, Wook Kim and W. Kim. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, Solid-State Electronics and Philosophical Magazine B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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