A. Botchkarev

6.2k citations

103 papers · 5.3k · 1 hit paper · h-index 42

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 92
- GaN-based semiconductor devices and materials 92
Electrical and Electronic Engineering 67
- Semiconductor materials and devices 54
- Silicon Carbide Semiconductor Technologies 11

Co-authors: H. Morkoç̌ (70 shared papers)H. Morkoç (20 shared papers)A. Salvador (47 shared papers)S. Noor Mohammad (30 shared papers)Özgür Aktaş (25 shared papers)Angus Rockett (4 shared papers)G. Martin (3 shared papers)Wook Kim (9 shared papers)
Journals: Applied Physics Letters (36 papers)Journal of Applied Physics (13 papers)Solid-State Electronics (6 papers)Electronics Letters (6 papers)Physical review. B, Condensed matter (4 papers)
Partner nations: United States Russia Italy

In The Last Decade

A. Botchkarev

99 papers receiving 5.2k citations

A. Botchkarev's Hit Papers

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Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy 1996 · 596 citations

Peers

Countries citing papers authored by A. Botchkarev

Since Specialization

Citations

This map shows the geographic impact of A. Botchkarev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Botchkarev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Botchkarev more than expected).

Fields of papers citing papers by A. Botchkarev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Botchkarev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Botchkarev. The network helps show where A. Botchkarev may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Botchkarev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Botchkarev Line = papers co-authored together A. Botchkarev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 103 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy Applied Physics Letters ·G. Martin, A. Botchkarev, Angus Rockett, H. Morkoç Hit paper breakdown →	1996	596
2	Very low resistance multilayer Ohmic contact to n-GaN Applied Physics Letters ·Zhifang Fan, S. Noor Mohammad, Wook Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç	1996	389
3	Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN Applied Physics Letters ·S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Häller, Z. Fan, S. Noor Mohammad, W. Kim, A. Botchkarev, H. Morkoç	1996	261
4	Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy Applied Physics Letters ·G. Martin, S. Strite, A. Botchkarev, Anchal Agarwal, Angus Rockett, H. Morkoç̌, Walter R. L. Lambrecht, B. Segall	1994	203
5	High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors Applied Physics Letters ·Özgür Aktaş, Z. Fan, S. Noor Mohammad, A. Botchkarev, H. Morkoç̌	1996	186
6	On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy Journal of Applied Physics ·Wook Kim, A. Botchkarev, A. Salvador, G. Popovici, H. Tang, H. Morkoç̌	1997	153
7	Spontaneous polarization and piezoelectric field inGaN/Al0.15Ga0.85Nquantum wells: Impact on the optical spectra Physical review. B, Condensed matter ·R. Cingolani, A. Botchkarev, Hong Tang, H. Morkoç̌, G. Traetta, G. Colı́, M. Lomascolo, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli	2000	148
8	Nature of Mg impurities in GaN Applied Physics Letters ·J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, H. Morkoç̌	1996	132
9	Deep centers in n-GaN grown by reactive molecular beam epitaxy Applied Physics Letters ·Z-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, H. Morkoç	1998	126
10	High transconductance-normally-off GaN MODFETs Electronics Letters ·A. Özgür, W. Kim, Zongjian Fan, A. Botchkarev, A. Salvador, S. Noor Mohammad, B. Sverdlov, H. Morkoç	1995	122
11	Mechanisms of band-edge emission in Mg-doped p-type GaN Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. Sverdlov, A. Botchkarev, H. Morkoç, B. Goldenberg	1996	117
12	Deep level defects in n-type GaN grown by molecular beam epitaxy Applied Physics Letters ·C. D. Wang, L. S. Yu, S. S. Lau, Edward T. Yu, W. Kim, A. Botchkarev, H. Morkoç̌	1998	110
13	Electrical conduction in platinum–gallium nitride Schottky diodes Journal of Applied Physics ·K. Suzue, S. Noor Mohammad, Z. Fan, W. Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç̌	1996	102
14	Mg-doped p-type GaN grown by reactive molecular beam epitaxy Applied Physics Letters ·Wook Kim, A. Salvador, A. Botchkarev, Özgür Aktaş, S. Noor Mohammad, H. Morcoç	1996	99
15	Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells Applied Physics Letters ·H. S. Kim, J. Y. Lin, H. X. Jiang, Chi‐Wai Chow, A. Botchkarev, H. Morkoç	1998	93
16	Microwave performance of AlGaN/GaN inverted MODFET's IEEE Electron Device Letters ·Özgür Aktaş, Z. Fan, A. Botchkarev, S. Noor Mohammad, M. Roth, T. Jenkins, L. Kehias, H. Morkoç̌	1997	92
17	Deep-center hopping conduction in GaN Journal of Applied Physics ·D. C. Look, D. C. Reynolds, W. Kim, Özgür Aktaş, A. Botchkarev, A. Salvador, H. Morkoç̌	1996	89
18	Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy Applied Physics Letters ·F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç̌, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, D. C. Reynolds, D. C. Look, K. R. Evans, C. W. Litton, W. C. Mitchel, P. M. Hemenger	1997	87
19	Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates Applied Physics Letters ·G. Popovici, Wook Kim, A. Botchkarev, Haipeng Tang, H. Morkoç̌, James S. Solomon	1997	87
20	Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy Journal of Applied Physics ·F. Hamdani, M. Yeadon, David J. Smith, H. Tang, W. Kim, A. Salvador, A. Botchkarev, J. M. Gibson, A. Y. Polyakov, Marek Skowroński, H. Morkoç̌	1998	82

About A. Botchkarev

A. Botchkarev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 103 papers that have together received 5.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (92 papers), Semiconductor materials and devices (54 papers), Ga2O3 and related materials (43 papers), Semiconductor Quantum Structures and Devices (30 papers), ZnO doping and properties (17 papers), Metal and Thin Film Mechanics (15 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Semiconductor materials and interfaces (10 papers). The work is most often cited by research in Condensed Matter Physics (4.5k citations), Electronic, Optical and Magnetic Materials (2.0k citations), Atomic and Molecular Physics, and Optics (2.1k citations), Electrical and Electronic Engineering (2.5k citations) and Materials Chemistry (1.7k citations). A. Botchkarev has collaborated with scholars based in United States, Russia and Italy. Frequent co-authors include H. Morkoç̌, H. Morkoç, A. Salvador, S. Noor Mohammad, Özgür Aktaş, Angus Rockett, G. Martin, Wook Kim, Z. Fan and W. Kim. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, Electronics Letters and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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