F. Bénistant

445 citations
54 papers · 326 · h-index 10

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Silicon and Solar Cell Technologies
    • Silicon Carbide Semiconductor Technologies
    • Ferroelectric and Negative Capacitance Devices
    • 3D IC and TSV technologies

Papers in

F. Bénistant

52 papers receiving 303 citations

Peers

F. Bénistant
Comparison fields: 5 of 30
  • Structural Biology 8
  • Electrical and Electronic Engineering 288
  • Atomic and Molecular Physics, and Optics 59
  • Hardware and Architecture 11
  • Surfaces, Coatings and Films 8
Replace Hugo Dansas with:
Hugo Dansas France
Sylvain Baudot France
Nicolas Daval France
B. T. Chan Belgium
G. Fuse Japan
K. Ando Japan
Hong Ng United States
Michael R. Polcari United States
R.J.P. Lander Belgium
Mark N. Ruberto United States
F. Bénistant relative to Hugo Dansas France Hugo Dansas's profile →
Citations per field
00.5×2×2.8×
Hugo Dansas · 1×
Citations per year

Countries citing papers authored by F. Bénistant

Since Specialization
Citations

This map shows the geographic impact of F. Bénistant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Bénistant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Bénistant more than expected).

Fields of papers citing papers by F. Bénistant

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Bénistant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Bénistant. The network helps show where F. Bénistant may publish in the future.

Co-authors

The 25 scholars most cited alongside F. Bénistant, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. Bénistant Line = papers co-authored together F. Bénistant links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 54 papers — load more, or switch the sort, to bring in the rest.

#Work
1 202236
2 200830
3 200619
4 200817
5 201414
6 201713
7 201812
8 201712
9 202211
10 201110
11 20158
12 20047
13 20177
14 20057
15 20027
16 20226
17 20086
18 20166
19 20085
20 20075

About F. Bénistant

F. Bénistant is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Electronic, Optical and Magnetic Materials and Ceramics and Composites, having authored 54 papers that have together received 326 indexed citations. Recurring topics across this work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers), Silicon and Solar Cell Technologies (23 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), Semiconductor materials and interfaces (8 papers), Silicon Carbide Semiconductor Technologies (5 papers), Ion-surface interactions and analysis (5 papers) and Copper Interconnects and Reliability (3 papers). The work is most often cited by research in Structural Biology (8 citations), Electrical and Electronic Engineering (288 citations), Atomic and Molecular Physics, and Optics (59 citations), Hardware and Architecture (11 citations) and Surfaces, Coatings and Films (8 citations). F. Bénistant has collaborated with scholars based in Singapore, United States and Germany. Frequent co-authors include Madhavi Srinivasan, Wenbo Zhao, Krishna Kumar Bhuwalka, O. Baumgartner, G. Rzepa, Hao Wu, Yijian Chen, El Mehdi Bazizi, Martín Jaraíz and Lap Chan. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Materials Science and Engineering B, IEEE Electron Device Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact