Lap Chan

1.0k citations

70 papers · 851 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Silicon and Solar Cell Technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 65
- Semiconductor materials and devices 54
- Advancements in Semiconductor Devices and Circuit Design 41
- Integrated Circuits and Semiconductor Failure Analysis 23
- Silicon and Solar Cell Technologies 14
Atomic and Molecular Physics, and Optics 19
- Semiconductor materials and interfaces 14

Co-authors: Yee‐Chia Yeo (26 shared papers)Ganesh Shankar Samudra (18 shared papers)Grace Huiqi Wang (16 shared papers)Eng-Huat Toh (16 shared papers)Ganesh Samudra (10 shared papers)Guo‐Qiang Lo (8 shared papers)Tupei Chen (8 shared papers)Shyue Seng Tan (7 shared papers)
Journals: IEEE Electron Device Letters (12 papers)Applied Physics Letters (8 papers)IEEE Transactions on Electron Devices (5 papers)Japanese Journal of Applied Physics (4 papers)Microelectronics Reliability (3 papers)
Partner nations: Singapore United States Finland

In The Last Decade

Lap Chan

65 papers receiving 822 citations

Peers

Countries citing papers authored by Lap Chan

Since Specialization

Citations

This map shows the geographic impact of Lap Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lap Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lap Chan more than expected).

Fields of papers citing papers by Lap Chan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lap Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lap Chan. The network helps show where Lap Chan may publish in the future.

Co-authors

The 25 scholars most cited alongside Lap Chan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Lap Chan Line = papers co-authored together Lap Chan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 70 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction Applied Physics Letters ·Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Ganesh Shankar Samudra, Yee‐Chia Yeo	2007	91
2	Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source Japanese Journal of Applied Physics ·Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Dennis Sylvester, Chun-Huat Heng, Ganesh Shankar Samudra, Yee‐Chia Yeo	2008	87
3	High-k gate stack on germanium substrate with fluorine incorporation Applied Physics Letters ·Ruilong Xie, Mingbin Yu, M. Y. Lai, Lap Chan, Chunxiang Zhu	2008	65
4	Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts IEEE Electron Device Letters ·Hoong-Shing Wong, Lap Chan, Ganesh Shankar Samudra, Yee‐Chia Yeo	2007	42
5	Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation IEEE Electron Device Letters ·Hoong-Shing Wong, Lap Chan, Ganesh Samudra, Yee-Chia Yeo	2007	40
6	Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region IEEE Transactions on Electron Devices ·Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Guo‐Qiang Lo, Ganesh Samudra, Yee‐Chia Yeo	2007	33
7	Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET Microelectronics Reliability ·Shyue Seng Tan, Tupei Chen, Chew Hoe Ang, Lap Chan	2004	30
8	Soft-Lithography-Mediated Chemical Vapor Deposition of Architectured Carbon Nanotube Networks on Elastomeric Polymer Langmuir ·Hou T. Ng, Maw Lin Foo, Aiping Fang, Jun Li, Guo Qin Xu, Stephan Jaenicke, Lap Chan, Sam Fong Yau Li	2001	27
9	Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation Applied Physics Letters ·Hoong-Shing Wong, Lap Chan, Ganesh Shankar Samudra, Yee‐Chia Yeo	2008	27
10	Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering Applied Physics Letters ·Eng-Huat Toh, Grace Huiqi Wang, Guo‐Qiang Lo, Lap Chan, Ganesh Shankar Samudra, Yee‐Chia Yeo	2007	23
11	Room Temperature Ferromagnetism in $({\hbox {Zn}}_{1-{\rm x}},{\hbox {Mg}}_{\rm x}){\hbox {O}}$ Film IEEE Transactions on Magnetics ·Yuwei Ma, Jun Ding, Lap Chan, Jiabao Yi, Tun Seng Herng, Stella Huang, Xuelian Huang	2010	23
12	I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering IEEE Electron Device Letters ·Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Guo‐Qiang Lo, Ganesh Samudra, Yee‐Chia Yeo	2006	21
13	A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor National University of Singapore ·Eng-Huat Toh, Grace Huiqi Wang, Guo‐Qiang Lo, N. Balasubramanian, Chih-Hang Tung, F. Bénistant, Lap Chan, Ganesh Samudra	2006	19
14	Neighboring effect in nitrogen-enhanced negative bias temperature instability Shyue Seng Tan, Tupei Chen, Jia Mei Soon, Kian Ping Loh, C. H. Ang, W. Y. Teo, Lap Chan	2003	17
15	Simulation and design of a germanium L-shaped impact-ionization MOS transistor Semiconductor Science and Technology ·Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Ganesh Shankar Samudra, Yee‐Chia Yeo	2007	17
16	Cool Copper Template for the Formation of Oriented Nanocrystalline α-Tantalum The Journal of Physical Chemistry B ·Clare Yong, Bei Chao Zhang, Chim Seng Seet, A. See, Lap Chan, John L. Sudijono, San Leong Liew, Chih-Hang Tung	2002	16
17	Understanding of Via‐Etch‐Induced Polymer Formation and Its Removal Journal of The Electrochemical Society ·Ying Wang, Sandra W. Graham, Lap Chan, Sheau‐Tan Loong	1997	16
18	A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance IEEE Electron Device Letters ·Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Ganesh Samudra, Yee‐Chia Yeo	2008	15
19	Silicon–Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors IEEE Electron Device Letters ·Hoong-Shing Wong, Kah‐Wee Ang, Lap Chan, Keat-Mun Hoe, Chih‐Hang Tung, Nithesh Balasubramanian, Doran Weeks, Matthias Bauer	2008	14
20	Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices Carbon ·Mei Yin Chan, Wei Li, Yuan Chen, Lap Chan, Pooi See Lee	2009	14

About Lap Chan

Lap Chan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 70 papers that have together received 851 indexed citations. Recurring topics across this work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers), Integrated Circuits and Semiconductor Failure Analysis (23 papers), Semiconductor materials and interfaces (14 papers), Silicon and Solar Cell Technologies (14 papers), Diamond and Carbon-based Materials Research (4 papers), Copper Interconnects and Reliability (4 papers) and Nanowire Synthesis and Applications (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (759 citations), Atomic and Molecular Physics, and Optics (199 citations), Nuclear Energy and Engineering (2 citations), Materials Chemistry (155 citations) and Biomedical Engineering (129 citations). Lap Chan has collaborated with scholars based in Singapore, United States and Finland. Frequent co-authors include Yee‐Chia Yeo, Ganesh Shankar Samudra, Grace Huiqi Wang, Eng-Huat Toh, Ganesh Samudra, Guo‐Qiang Lo, Tupei Chen, Shyue Seng Tan, Mingbin Yu and Chun-Huat Heng. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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