D. A. Buchanan

6.5k citations

96 papers · 4.9k · 2 hit papers · h-index 32

Impact in

Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 66
- Semiconductor materials and devices 58
- Advancements in Semiconductor Devices and Circuit Design 28
- Integrated Circuits and Semiconductor Failure Analysis 22
Biomedical Engineering 23
- Advanced Sensor and Energy Harvesting Materials 8

Co-authors: E. Cartier (9 shared papers)S.-H. Lo (4 shared papers)D. J. DiMaria (10 shared papers)J. H. Stathis (6 shared papers)Farhan Rana (2 shared papers)M. Copel (6 shared papers)Shalom J. Wind (3 shared papers)D.J. Frank (2 shared papers)
Journals: Applied Physics Letters (13 papers)Journal of Applied Physics (9 papers)Microelectronic Engineering (8 papers)IEEE Electron Device Letters (5 papers)Applied Surface Science (4 papers)
Partner nations: United States Canada Ukraine

In The Last Decade

D. A. Buchanan

93 papers receiving 4.6k citations

D. A. Buchanan's Hit Papers

align trajectories log scale

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's 1997 · 633 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1997 IEEE Electron Device Letters
1997 Proceedings of the IEEE

Peers

Countries citing papers authored by D. A. Buchanan

Since Specialization

Citations

This map shows the geographic impact of D. A. Buchanan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. A. Buchanan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. A. Buchanan more than expected).

Fields of papers citing papers by D. A. Buchanan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. A. Buchanan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. A. Buchanan. The network helps show where D. A. Buchanan may publish in the future.

Co-authors

The 25 scholars most cited alongside D. A. Buchanan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. A. Buchanan Line = papers co-authored together D. A. Buchanan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 96 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's IEEE Electron Device Letters ·S.-H. Lo, D. A. Buchanan, (unknown), W. Wang Hit paper breakdown →	1997	633
2	CMOS scaling into the nanometer regime Proceedings of the IEEE ·Yuan Taur, D. A. Buchanan, Wei Chen, D.J. Frank, K.E. Ismail, Shih-Hsien Lo, G.A. Sai-Halasz, R. Viswanathan, H.-J. Wann, Shalom J. Wind, H.‐S. Philip Wong Hit paper breakdown →	1997	614
3	Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen Applied Physics Letters ·E. Cartier, J. H. Stathis, D. A. Buchanan	1993	324
4	Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues Microelectronic Engineering ·E. P. Gusev, E. Cartier, D. A. Buchanan, M. Gribelyuk, M. Copel, H. Schmidt, C. D’Emic	2001	317
5	Scaling the gate dielectric: Materials, integration, and reliability IBM Journal of Research and Development ·D. A. Buchanan	1999	262
6	Hydrogenation over supported gold catalysts Journal of the Chemical Society Chemical Communications ·Geoffrey C. Bond, Paul Sermon, Geoffrey Webb, D. A. Buchanan, Peter B. Wells	1973	214
7	Anode hole injection and trapping in silicon dioxide Journal of Applied Physics ·D. J. DiMaria, E. Cartier, D. A. Buchanan	1996	175
8	Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides Applied Physics Letters ·Farhan Rana, Sandip Tiwari, D. A. Buchanan	1996	158
9	Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides IBM Journal of Research and Development ·S.-H. Lo, D. A. Buchanan, (unknown)	1999	152
10	Volatile and non-volatile memories in silicon with nano-crystal storage S. Tiwari, Farhan Rana, K. Chan, H.I. Hanafi, Wei Liat Chan, D. A. Buchanan	2002	134
11	Interface and bulk trap generation in metal-oxide-semiconductor capacitors Journal of Applied Physics ·D. A. Buchanan, D. J. DiMaria	1990	118
12	Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment Applied Physics Letters ·Agnese Callegari, P.D. Hoh, D. A. Buchanan, D. Lacey	1989	104
13	CMOS scaling into the 21st century: 0.1 µm and beyond IBM Journal of Research and Development ·Y. Taur, Y. J. Mii, D.J. Frank, H.‐S. Philip Wong, D. A. Buchanan, Shalom J. Wind, S. A. Rishton, G.A. Sai-Halasz, E. Nowak	1995	81
14	Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface Journal of Applied Physics ·D. J. DiMaria, D. A. Buchanan, J. H. Stathis, Robert E. Stahlbush	1995	79
15	Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors Journal of Applied Physics ·D. A. Buchanan, A. D. Marwick, D. J. DiMaria, L. Dori	1994	76
16	Reliability and integration of ultra-thin gate dielectrics for advanced CMOS Microelectronic Engineering ·D. A. Buchanan, S.-H. Lo	1997	76
17	Coulombic and neutral trapping centers in silicon dioxide Physical review. B, Condensed matter ·D. A. Buchanan, Massimo V. Fischetti, D. J. DiMaria	1991	69
18	Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon Applied Physics Letters ·E. Cartier, D. A. Buchanan, G.J. Dunn	1994	63
19	The surface chemistry of vinyl iodide on platinum(111) Journal of the American Chemical Society ·Z. M. Liu, Xian Zhou, D. A. Buchanan, János Kiss, J. M. White	1992	58
20	Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs Applied Physics Letters ·Agnese Callegari, D. K. Sadana, D. A. Buchanan, A. Paccagnella, E. D. Marshall, M. A. Tischler, M. Norcott	1991	47

About D. A. Buchanan

D. A. Buchanan is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Radiology, Nuclear Medicine and Imaging and Mechanics of Materials, having authored 96 papers that have together received 4.9k indexed citations. Recurring topics across this work include Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers), Integrated Circuits and Semiconductor Failure Analysis (22 papers), Ultrasound Imaging and Elastography (16 papers), Ultrasonics and Acoustic Wave Propagation (11 papers), Semiconductor materials and interfaces (10 papers), Advanced Sensor and Energy Harvesting Materials (8 papers) and Electronic and Structural Properties of Oxides (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.2k citations), Materials Chemistry (1.6k citations), Atomic and Molecular Physics, and Optics (715 citations), Electronic, Optical and Magnetic Materials (310 citations) and Catalysis (100 citations). D. A. Buchanan has collaborated with scholars based in United States, Canada and Ukraine. Frequent co-authors include E. Cartier, S.-H. Lo, D. J. DiMaria, J. H. Stathis, Farhan Rana, M. Copel, Shalom J. Wind, D.J. Frank, H.‐S. Philip Wong and G.A. Sai-Halasz. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Microelectronic Engineering, IEEE Electron Device Letters and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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D. A. Buchanan

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