Chen-Feng Hsu

483 citations
15 papers · 262 · h-index 8

Impact in

  • Materials Chemistry
    • 2D Materials and Applications
    • Phase-change materials and chalcogenides
    • Graphene research and applications
    • MXene and MAX Phase Materials
  • Electrical and Electronic Engineering
    • Advanced Memory and Neural Computing
    • Ferroelectric and Negative Capacitance Devices
    • Semiconductor materials and devices

Papers in

  • Electrical and Electronic Engineering 15
    • Advanced Memory and Neural Computing 8
    • Semiconductor materials and devices 6
    • Ferroelectric and Negative Capacitance Devices 5
    • Advancements in Semiconductor Devices and Circuit Design 3
  • Materials Chemistry 11
    • Phase-change materials and chalcogenides 6
    • Graphene research and applications 3
    • 2D Materials and Applications 3
Co-authors
Xinyu Bao (9 shared papers)H.‐S. Philip Wong (7 shared papers)Wen‐Hao Chang (4 shared papers)Chao-Ching Cheng (4 shared papers)Yun-Yan Chung (2 shared papers)Iuliana Radu (4 shared papers)Sheng‐Kai Su (3 shared papers)Yu‐Chen Chang (1 shared paper)
Journals
IEEE Electron Device Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)Nature Communications (1 paper)Nature Electronics (1 paper)ACS Applied Materials & Interfaces (1 paper)
Partner nations
TaiwanUnited StatesChina

In The Last Decade

Chen-Feng Hsu

15 papers receiving 257 citations

Peers

Chen-Feng Hsu
Comparison fields: 5 of 33
  • Materials Chemistry 181
  • Electrical and Electronic Engineering 188
  • Polymers and Plastics 16
  • Atomic and Molecular Physics, and Optics 34
  • Biomedical Engineering 43
Replace Arnab Pal with:
Arnab Pal United States
Enrico Caruso Italy
Juan Navarro‐Arenas Spain
Joanna Kutrowska-Girzycka Poland
Annie Kumar Singapore
Vladimir Pejović Belgium
Tara Peña United States
Xiangjin Wu United States
Chengji Jin China
Chen-Feng Hsu relative to Arnab Pal United States Arnab Pal's profile →
Citations per field
00.5×1.5×
Arnab Pal · 1×
Citations per year

Countries citing papers authored by Chen-Feng Hsu

Since Specialization
Citations

This map shows the geographic impact of Chen-Feng Hsu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chen-Feng Hsu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chen-Feng Hsu more than expected).

Fields of papers citing papers by Chen-Feng Hsu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chen-Feng Hsu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chen-Feng Hsu. The network helps show where Chen-Feng Hsu may publish in the future.

Co-authors

The 25 scholars most cited alongside Chen-Feng Hsu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chen-Feng Hsu Line = papers co-authored together Chen-Feng Hsu links everyone, so they are left out of the graph.

All Works

15 of 15 papers shown
#Work
1
High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts
IEEE Electron Device Letters ·Ang‐Sheng Chou, Chao-Ching Cheng, San‐Lin Liew, Po‐Hsun Ho, Shih-Yun Wang, Yu‐Chen Chang, Che-Kang Chang, Yuan-Chun Su, Zheng-Da Huang, Fang‐Yu Fu, Chen-Feng Hsu, Yun-Yan Chung, Wen‐Hao Chang, Lain‐Jong Li, Chih‐I Wu
202051
2
First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
2022 International Electron Devices Meeting (IEDM) ·Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu, Wei‐Sheng Yun, Ming‐Yang Li, Sheng‐Kai Su, Yu-Tsung Liao, Meng-Chien Lee, Guo‐Wei Huang, San‐Lin Liew, Yun-Yang Shen, Wen‐Hao Chang, Chien-Wei Chen, Chi‐Chung Kei, Han Wang, H.‐S. Philip Wong, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana Radu
202249
3
Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory
Nature Communications ·Xiangjin Wu, Asir Intisar Khan, Hengyuan Lee, Chen-Feng Hsu, H. R. Zhang, Heshan Yu, N. Roy, Albert V. Davydov, Ichiro Takeuchi, Xinyu Bao, H.‐S. Philip Wong, Eric Pop
202440
4
High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·M. Y. Song, C. M. Lee, Shao‐Yu Yang, G. L. Chen, K. M. Chen, I J. Wang, Yu-Chen Hsin, K. T. Chang, Chen-Feng Hsu, S. H. Li, J. H. Wei, T. Y. Lee, Meng‐Fan Chang, Xinyu Bao, C.H. Diaz, S. J. Lin
202229
5
Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping
Nature Electronics ·Zichen Zhang, M. Passlack, Gregory Pitner, Shreyam Natani, Sheng‐Kai Su, Tzu‐Ang Chao, San Lin Liew, Vincent Hou, Chen-Feng Hsu, Wade Shipley, Nathaniel S. Safron, G. Doornbos, Tsung-En Lee, Iuliana Radu, Andrew C. Kummel, Prabhakar R. Bandaru, H.‐S. Philip Wong
202327
6
Low variability high endurance and low voltage arsenic-free selectors based on GeCTe
2021 IEEE International Electron Devices Meeting (IEDM) ·Elia Ambrosi, Cheng‐Hsien Wu, H. Y. Lee, P. C. Chang, Chen-Feng Hsu, C. M. Lee, Chia‐Wei Chang, Y. Y Chen, Dawei Heh, Dican Hou, P. J. Liao, T. Y. Lee, Meng‐Fan Chang, Hoilun Wong, Xinyu Bao
202116
7
Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth
ACS Applied Materials & Interfaces ·Zichen Zhang, M. Passlack, Gregory Pitner, Cheng-Hsuan Kuo, Scott T. Ueda, James Huang, Harshil Kashyap, Victor Wang, Jacob Spiegelman, Kai‐Tak Lam, Yu‐Chia Liang, San Lin Liew, Chen-Feng Hsu, Andrew C. Kummel, Prabhakar R. Bandaru
202214
8
Reliable Low Voltage Selector Device Technology Based on Robust SiNGeCTe Arsenic-Free Chalcogenide
IEEE Electron Device Letters ·Elia Ambrosi, Cheng‐Hsien Wu, Heng-Yuan Lee, Chien-Min Lee, Chen-Feng Hsu, Cheng-Chun Chang, Tung-Ying Lee, Xinyu Bao
202212
9
On the Extreme Scaling of Transistors with Monolayer MOS2 Channel
Wen-Chia Wu, Terry Y.T. Hung, D. Mahaveer Sathaiya, Edward Chen, Chen-Feng Hsu, Walker Yun, Hsiang-Chi Hu, Bo-Heng Liu, T.Y. Lee, Chi‐Chung Kei, Wen‐Hao Chang, Jin Cai, Wallace Jeff, Chung-Cheng Wu, H.‐S. Philip Wong, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana Radu
20246
10
Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS 2 Channel Transistors
IEEE Transactions on Electron Devices ·Wen-Chia Wu, Terry Y.T. Hung, D. Mahaveer Sathaiya, Goutham Arutchelvan, Chen-Feng Hsu, Sheng‐Kai Su, Ang Sheng Chou, Edward Chen, Yun-Yang Shen, San Lin Liew, Vincent Hou, T. Y. Lee, Jin Cai, Chung-Cheng Wu, Jue-Heng WU, H.‐S. Philip Wong, Chao-Ching Cheng, Wen‐Hao Chang, Iuliana Radu, Chao-Hsin Chien
20236
11
Engineering defects in pristine amorphous chalcogenides for forming-free low voltage selectors
2022 International Electron Devices Meeting (IEDM) ·Elia Ambrosi, Cheng‐Hsien Wu, H. Y. Lee, Chen-Feng Hsu, C. M. Lee, Sam Vaziri, I. Datye, Y. Y. Chen, Dican Hou, P. C. Chang, Dawei Heh, P. J. Liao, T. Y. Lee, Meng‐Fan Chang, Hoilun Wong, Xinyu Bao
20225
12
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line
IEEE Electron Device Letters ·William Hwang, Fen Xue, Ming-Yuan Song, Chen-Feng Hsu, Tao Chen, Wilman Tsai, Xinyu Bao, Shan X. Wang
20244
13
Chalcogenide Selectors for Low Voltage and High Density Memory Applications
Elia Ambrosi, Cheng‐Hsien Wu, Cheng-Chen Kuo, Chen-Feng Hsu, Heng-Yuan Lee, Tung-Ying Lee, Xinyu Bao
20241
14
First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory
Fabia F. Athena, Elia Ambrosi, Kamalesh Jana, Cheng‐Hsien Wu, Jonathan Hartanto, Y. M. Lee, Chih-Ting Kuo, Shuhan Liu, Balreen Saini, Chi‐Chuan Wang, Chen-Feng Hsu, Gilad Zeevi, Xijie Wang, Jiheong Kang, Eric Pop, T. Y. Lee, Paul C. McIntyre, H.‐S. Philip Wong, Xinyu Bao
20241
15
Forming-Free Selectors Based on Te in an Insulating SiO x Matrix
IEEE Transactions on Electron Devices ·Isha Datye, Sam Vaziri, Elia Ambrosi, Asir Intisar Khan, Heungdong Kwon, Cheng‐Hsien Wu, Chen-Feng Hsu, Jeremy Guy, Tung-Ying Lee, H.‐S. Philip Wong, Xinyu Bao
20231

About Chen-Feng Hsu

Chen-Feng Hsu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Polymers and Plastics and Biomedical Engineering, having authored 15 papers that have together received 262 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (8 papers), Phase-change materials and chalcogenides (6 papers), Semiconductor materials and devices (6 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Transition Metal Oxide Nanomaterials (3 papers), Graphene research and applications (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and 2D Materials and Applications (3 papers). The work is most often cited by research in Materials Chemistry (181 citations), Electrical and Electronic Engineering (188 citations), Polymers and Plastics (16 citations), Atomic and Molecular Physics, and Optics (34 citations) and Biomedical Engineering (43 citations). Chen-Feng Hsu has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include Xinyu Bao, H.‐S. Philip Wong, Wen‐Hao Chang, Chao-Ching Cheng, Yun-Yan Chung, Iuliana Radu, Sheng‐Kai Su, Yu‐Chen Chang, Eric Pop and Gregory Pitner. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Nature Communications, Nature Electronics and ACS Applied Materials & Interfaces.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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