Annie Kumar

519 citations

28 papers · 422 · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Advanced Memory and Neural Computing
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 27
- Advancements in Semiconductor Devices and Circuit Design 14
- Ferroelectric and Negative Capacitance Devices 5
- Radio Frequency Integrated Circuit Design 4
- Thin-Film Transistor Technologies 4
- Photonic and Optical Devices 4
- Semiconductor Lasers and Optical Devices 3
- solar cell performance optimization 2
Condensed Matter Physics 3
- GaN-based semiconductor devices and materials 3

Co-authors: Xiao Gong (25 shared papers)Kaizhen Han (10 shared papers)Chengkuan Wang (8 shared papers)Subhranu Samanta (4 shared papers)Chen Sun (9 shared papers)Shengqiang Xu (7 shared papers)Ying Wu (7 shared papers)Aaron Voon Yew Thean (2 shared papers)
Journals: IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (3 papers)Optics Express (2 papers)Nano Letters (2 papers)IEEE Transactions on Semiconductor Manufacturing (1 paper)
Partner nations: Singapore United States China

In The Last Decade

Annie Kumar

27 papers receiving 419 citations

Peers

Countries citing papers authored by Annie Kumar

Since Specialization

Citations

This map shows the geographic impact of Annie Kumar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Annie Kumar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Annie Kumar more than expected).

Fields of papers citing papers by Annie Kumar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Annie Kumar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Annie Kumar. The network helps show where Annie Kumar may publish in the future.

Co-authors

The 25 scholars most cited alongside Annie Kumar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Annie Kumar Line = papers co-authored together Annie Kumar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 28 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity IEEE Electron Device Letters ·Subhranu Samanta, Umesh Chand, Shengqiang Xu, Kaizhen Han, Ying Wu, Chengkuan Wang, Annie Kumar, Hasita Veluri	2020	77
2	Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure IEEE Electron Device Letters ·Chen Sun, Zijie Zheng, Kaizhen Han, Subhranu Samanta, Jiuren Zhou, Qiwen Kong, Jishen Zhang, Haiwen Xu	2021	38
3	Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length IEEE Transactions on Electron Devices ·Subhranu Samanta, Kaizhen Han, Chen Sun, Chengkuan Wang, Annie Kumar, Aaron Voon Yew Thean, Xiao Gong	2021	37
4	Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate IEEE Transactions on Electron Devices ·Dian Lei, Kwang Hong Lee, Yi‐Chiau Huang, Wei Wang, Saeid Masudy‐Panah, Sachin Yadav, Annie Kumar, Yuan Dong	2018	32
5	Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width Nano Letters ·Yuye Kang, Shengqiang Xu, Kaizhen Han, Eugene Y.-J. Kong, Zhigang Song, Sheng Luo, Annie Kumar, Chengkuan Wang	2021	31
6	The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs Symposium on VLSI Technology ·Dian Lei, Kwang Hong Lee, Shuyu Bao, Saeid Masudy‐Panah, Sachin Yadav, Annie Kumar, Yuan Dong, Yuye Kang	2017	26
7	Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory IEEE Transactions on Electron Devices ·Chen Sun, Kaizhen Han, Subhranu Samanta, Qiwen Kong, Jishen Zhang, Haiwen Xu, Xinke Wang, Annie Kumar	2022	24
8	Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V) IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong	2022	20
9	Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors IEEE Transactions on Electron Devices ·Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Zuopu Zhou, Leming Jiao, Annie Kumar, Rui Shao	2023	17
10	First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs Technical digest - International Electron Devices Meeting/Technical digest ·Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Annie Kumar, Rui Shao, Zuopu Zhou, Leming Jiao	2022	16
11	(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design ECS Transactions ·Eugene A. Fitzgerald, Kenneth E. Lee, Soon-Fatt Yoon, S. J. Chua, Chuan Seng Tan, Geok Ing Ng, Xing Wang Zhou, Xiao Gong	2016	15
12	Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs IEEE Electron Device Letters ·Yuye Kang, Kaizhen Han, Annie Kumar, Chengkuan Wang, Chen Sun, Zuopu Zhou, Jiuren Zhou, Xiao Gong	2021	14
13	Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer AIP Advances ·David A. Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee	2016	12
14	Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology Journal of Applied Physics ·Saeid Masudy‐Panah, Ying Wu, Dian Lei, Annie Kumar, Yee‐Chia Yeo, Xiao Gong	2018	11
15	First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems Symposium on VLSI Technology ·Kaizhen Han, Ying Wu, Yi Chiau Huang, Shengqiang Xu, Annie Kumar, Eugene Y.-J. Kong, Yuye Kang, Jishen Zhang	2019	9
16	Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate IEEE Transactions on Electron Devices ·Sachin Yadav, Kian Hua Tan, Annie Kumar, Kian Hui Goh, Gengchiau Liang, Soon-Fatt Yoon, Xiao Gong, Yee‐Chia Yeo	2016	8
17	High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of low noise and medium power amplifiers with Si CMOS Technical digest - International Electron Devices Meeting/Technical digest ·Sachin Yadav, Annie Kumar, Xuan Sang Nguyen, Kwang Hong Lee, Zhihong Liu, Weichuan Xing, Saeid Masudy‐Panah, Kenneth E. Lee	2017	7
18	MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS IEEE Transactions on Semiconductor Manufacturing ·Xuan Sang Nguyen, Sachin Yadav, Kwang Hong Lee, David A. Kohen, Annie Kumar, Riko I Made, Kenneth E. Lee, Soo Jin Chua	2017	6
19	Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs) Optics Express ·Annie Kumar, Shuh–Ying Lee, Sachin Yadav, Kian Hua Tan, Wan Khai Loke, Yuan Dong, Kwang Hong Lee, Satrio Wicaksono	2017	5
20	GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,int of 900 µS/µm, and High-Field µeff of 275 cm2/V•s IEEE Symposium on VLSI Technology ·Dian Lei, Kaizhen Han, Kwang Hong Lee, Yi‐Chiau Huang, Wei Wang, Sachin Yadav, Annie Kumar, Ying Wu	2018	5

About Annie Kumar

Annie Kumar is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Nuclear Energy and Engineering, having authored 28 papers that have together received 422 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (14 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Radio Frequency Integrated Circuit Design (4 papers), Thin-Film Transistor Technologies (4 papers), Photonic and Optical Devices (4 papers), Semiconductor Lasers and Optical Devices (3 papers), GaN-based semiconductor devices and materials (3 papers) and solar cell performance optimization (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (382 citations), Atomic and Molecular Physics, and Optics (45 citations), Condensed Matter Physics (17 citations), Bioengineering (2 citations) and Materials Chemistry (22 citations). Annie Kumar has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Xiao Gong, Kaizhen Han, Chengkuan Wang, Subhranu Samanta, Chen Sun, Shengqiang Xu, Ying Wu, Aaron Voon Yew Thean, Yuye Kang and Haiwen Xu. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Optics Express, Nano Letters and IEEE Transactions on Semiconductor Manufacturing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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