Sheng‐Kai Su

663 citations

27 papers · 459 · h-index 12

Impact in

Materials Chemistry
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Carbon Nanotubes in Composites
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices

Papers in

Electrical and Electronic Engineering 22
- Semiconductor materials and devices 17
- Advancements in Semiconductor Devices and Circuit Design 14
- Ferroelectric and Negative Capacitance Devices 6
Materials Chemistry 18
- Graphene research and applications 10
- 2D Materials and Applications 8
- Carbon Nanotubes in Composites 6

Co-authors: H.‐S. Philip Wong (18 shared papers)Chao-Ching Cheng (8 shared papers)Lain‐Jong Li (5 shared papers)Chih‐Piao Chuu (3 shared papers)Mingyang Li (1 shared paper)Iuliana Radu (14 shared papers)Gregory Pitner (14 shared papers)Edward Chen (10 shared papers)
Journals: ACS Nano (2 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Electron Device Letters (2 papers)Journal of the Physical Society of Japan (1 paper)Review of Scientific Instruments (1 paper)
Partner nations: Taiwan United States China

In The Last Decade

Sheng‐Kai Su

27 papers receiving 455 citations

Peers

Countries citing papers authored by Sheng‐Kai Su

Since Specialization

Citations

This map shows the geographic impact of Sheng‐Kai Su's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sheng‐Kai Su with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sheng‐Kai Su more than expected).

Fields of papers citing papers by Sheng‐Kai Su

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sheng‐Kai Su. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sheng‐Kai Su. The network helps show where Sheng‐Kai Su may publish in the future.

Co-authors

The 25 scholars most cited alongside Sheng‐Kai Su, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Sheng‐Kai Su Line = papers co-authored together Sheng‐Kai Su links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Layered Semiconducting 2D Materials for Future Transistor Applications Small Structures ·Sheng‐Kai Su, Chih‐Piao Chuu, Mingyang Li, Chao-Ching Cheng, H.‐S. Philip Wong, Lain‐Jong Li	2021	126
2	First Demonstration of GAA Monolayer-MoS₂ Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length 2022 International Electron Devices Meeting (IEDM) ·Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu, Wei‐Sheng Yun, Ming‐Yang Li, Sheng‐Kai Su, Yu-Tsung Liao, Meng-Chien Lee, Guo‐Wei Huang, San‐Lin Liew, Yun-Yang Shen, Wen‐Hao Chang, Chien-Wei Chen, Chi‐Chung Kei, Han Wang, H.‐S. Philip Wong, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana Radu	2022	52
3	Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs M.J.H. van Dal, G. Vellianitis, G. Doornbos, B. Duriez, M. Holland, T. Vasen, Aryan Afzalian, E. Chen, Sheng‐Kai Su, Ta-Kun Chen, Ting Shen, Zheng Wu, C.H. Diaz	2018	36
4	First demonstration of 40-nm channel length top-gate WS₂ pFET using channel area-selective CVD growth directly on SiO_x/Si substrate Chao-Ching Cheng, Yun-Yan Chung, Uing-Yang Li, Chao-Ting Lin, Chi-Feng Li, Jyun‐Hong Chen, Tung‐Yen Lai, Kai‐Shin Li, Jia‐Min Shieh, Sheng‐Kai Su, Hung-Li Chiang, Tzu-Chiang Chen, Lain‐Jong Li, H.‐S. Philip Wong, Chao-Hsin Chien	2019	30
5	Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping Nature Electronics ·Zichen Zhang, M. Passlack, Gregory Pitner, Shreyam Natani, Sheng‐Kai Su, Tzu‐Ang Chao, San Lin Liew, Vincent Hou, Chen-Feng Hsu, Wade Shipley, Nathaniel S. Safron, G. Doornbos, Tsung-En Lee, Iuliana Radu, Andrew C. Kummel, Prabhakar R. Bandaru, H.‐S. Philip Wong	2023	28
6	Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length Gregory Pitner, Zichen Zhang, Qing Lin, Sheng‐Kai Su, Carlo Gilardi, Chihping Kuo, Harshil Kashyap, T. Weiß, Zhouchangwan Yu, Tzu‐Ang Chao, Lain‐Jong Li, Subhasish Mitra, H.‐S. Philip Wong, J. Cai, Andrew C. Kummel, Prabhakar R. Bandaru, M. Passlack	2020	26
7	High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method ACS Nano ·Po‐Hsun Ho, Ren‐Hao Cheng, Po-Heng Pao, Sui-An Chou, (unknown), Yuying Yang, Yu-Syuan Wu, Yuan-Chun Su, Po‐Sen Mao, Sheng‐Kai Su, Bo-Jhih Chou, Edward Chen, Terry Y.T. Hung, Ming‐Yang Li, Chao-Ching Cheng, Wei-Yen Woon, Szuya Sandy Liao, Wen‐Hao Chang, Chao-Hsin Chien	2023	23
8	Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Sheng‐Kai Su, Edward Chen, Terry Y.T. Hung, Mengzhan Li, Gregory Pitner, Chao-Ching Cheng, Han Wang, Jin Cai, H.‐S. Philip Wong, Iuliana Radu	2022	22
9	High-performance monolayer MoS₂ nanosheet GAA transistor Nanotechnology ·Bo-Jhih Chou, Yun-Yan Chung, Wei‐Sheng Yun, Chen‐Feng Hsu, Ming‐Yang Li, Sheng‐Kai Su, San‐Lin Liew, Vincent Duen‐Huei Hou, Chien‐Wei Chen, Chi‐Chung Kei, Yun-Yang Shen, Wen‐Hao Chang, T. Y. Lee, Chao-Ching Cheng, Iuliana Radu, Chao-Hsin Chien	2023	15
10	Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs IEEE Electron Device Letters ·Qing Lin, Gregory Pitner, Carlo Gilardi, Sheng‐Kai Su, Zichen Zhang, Edward Chen, Prabhakar R. Bandaru, Andrew C. Kummel, Han Wang, M. Passlack, Subhasish Mitra, H.‐S. Philip Wong	2022	13
11	Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors ACS Nano ·Qing Lin, Carlo Gilardi, Sheng‐Kai Su, Zichen Zhang, Edward Chen, Prabhakar R. Bandaru, Andrew C. Kummel, Iuliana Radu, Subhasish Mitra, Gregory Pitner, H.‐S. Philip Wong	2023	13
12	High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at V_DS of 0.75 V by self-aligned doping in sub-20 nm spacer Shengman Li, Tzu‐Ang Chao, Carlo Gilardi, Nathaniel S. Safron, Sheng‐Kai Su, Gilad Zeevi, Andrew Denis Bechdolt, M. Passlack, Aaryan Oberoi, Qing Lin, Ziehen Zhang, Kesong Wang, Harshil Kashyap, San‐Lin Liew, Vincent Hou, Andrew C. Kummel, Luliana Radu, Gregory Pitner, H.‐S. Philip Wong, Subhasish Mitra	2023	11
13	Comprehensive Physics Based TCAD Model for 2D MX₂ Channel Transistors 2022 International Electron Devices Meeting (IEDM) ·D. Mahaveer Sathaiya, Terry Y.T. Hung, Edward Chen, Wen-Chia Wu, Aslan Wei, Chih‐Piao Chuu, Sheng‐Kai Su, Ang Sheng Chou, Cheng-Ting Chung, Chao-Hsin Chien, Han Wang, Jin Cai, Chung-Cheng Wu, Iuliana Radu, Jeff Wu	2022	11
14	Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS₂ Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology IEEE Transactions on Electron Devices ·Yun-Yan Chung, Jia‐Min Shieh, Sheng‐Kai Su, Hung-Li Chiang, Tzu-Chiang Chen, Lain‐Jong Li, H.‐S. Philip Wong, Wen‐Bin Jian, Chao-Hsin Chien, Kuan‐Cheng Lu, Chao-Ching Cheng, Ming‐Yang Li, Chao-Ting Lin, Chi-Feng Li, Jyun‐Hong Chen, Tung‐Yen Lai, Kai‐Shin Li	2019	9
15	Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array Advanced Materials Interfaces ·Tzu‐Ang Chao, Chih‐Piao Chuu, San‐Lin Liew, I‐Fan Hu, Sheng‐Kai Su, Shengman Li, Shih‐Chu Lin, Vincent Hou, H.‐S. Philip Wong, Iuliana Radu, Wen‐Hao Chang, Gregory Pitner, Han Wang	2023	8
16	Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS ₂ Channel Transistors IEEE Transactions on Electron Devices ·Wen-Chia Wu, Terry Y.T. Hung, D. Mahaveer Sathaiya, Goutham Arutchelvan, Chen-Feng Hsu, Sheng‐Kai Su, Ang Sheng Chou, Edward Chen, Yun-Yang Shen, San Lin Liew, Vincent Hou, T. Y. Lee, Jin Cai, Chung-Cheng Wu, Jeff Wu, H.‐S. Philip Wong, Chao-Ching Cheng, Wen‐Hao Chang, Iuliana Radu, Chao-Hsin Chien	2023	7
17	Impact of Metal Hybridization on Contact Resistance and Leakage Current of Carbon Nanotube Transistors IEEE Electron Device Letters ·Sheng‐Kai Su, Alfonso Sanchez-Soares, Edward Chen, Thomas F. Kelly, Giorgos Fagas, James C. Greer, Gregory Pitner, H.‐S. Philip Wong, Iuliana Radu	2022	7
18	Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors Nano Letters ·Hsin‐Yuan Chiu, Nathaniel S. Safron, M. Passlack, Tzu‐Ang Chao, Sheng‐Kai Su, Po‐Sen Mao, Chen‐Han Chou, He Huang, Guan-Wei Wu, Chien‐Wei Chen, Chi‐Chung Kei, Wen‐Hao Chang, H.-S. Philip Wong, Iuliana Radu, Gregory Pitner, Chao‐Hsin Chien	2025	4
19	Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors Advanced Electronic Materials ·Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, T. Y. Lee, Wen‐Hao Chang, M. Passlack, H.‐S. Philip Wong, Iuliana Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien	2023	3
20	Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors Sheng‐Kai Su, Jin Cai, Edward Chen, Lain‐Jong Li, H.‐S. Philip Wong	2020	3

About Sheng‐Kai Su

Sheng‐Kai Su is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 27 papers that have together received 459 indexed citations. Recurring topics across this work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Graphene research and applications (10 papers), 2D Materials and Applications (8 papers), Nanowire Synthesis and Applications (7 papers), Ferroelectric and Negative Capacitance Devices (6 papers), Carbon Nanotubes in Composites (6 papers) and Semiconductor Quantum Structures and Devices (3 papers). The work is most often cited by research in Materials Chemistry (326 citations), Electrical and Electronic Engineering (311 citations), Biomedical Engineering (104 citations), Structural Biology (2 citations) and Electronic, Optical and Magnetic Materials (23 citations). Sheng‐Kai Su has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include H.‐S. Philip Wong, Chao-Ching Cheng, Lain‐Jong Li, Chih‐Piao Chuu, Mingyang Li, Iuliana Radu, Gregory Pitner, Edward Chen, Chao-Hsin Chien and Andrew C. Kummel. Their work appears in journals such as ACS Nano, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Journal of the Physical Society of Japan and Review of Scientific Instruments.

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Sheng‐Kai Su

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