Chao-Ching Cheng

2.6k citations

55 papers · 880 · h-index 17

Impact in

Materials Chemistry top 10%
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing

Papers in

Electrical and Electronic Engineering 45
- Semiconductor materials and devices 33
- Ferroelectric and Negative Capacitance Devices 23
- Advancements in Semiconductor Devices and Circuit Design 17
- Advanced Memory and Neural Computing 10
Materials Chemistry 26
- 2D Materials and Applications 15
- Graphene research and applications 6

Co-authors: H.‐S. Philip Wong (13 shared papers)Lain‐Jong Li (13 shared papers)Sheng‐Kai Su (8 shared papers)Chih‐Piao Chuu (3 shared papers)Mingyang Li (1 shared paper)Wen‐Hao Chang (11 shared papers)Chao-Hsin Chien (17 shared papers)Albert Chin (7 shared papers)
Journals: IEEE Transactions on Electron Devices (7 papers)IEEE Electron Device Letters (6 papers)Applied Physics Letters (3 papers)Journal of The Electrochemical Society (2 papers)Journal of Applied Physics (2 papers)
Partner nations: Taiwan United States Singapore

In The Last Decade

Chao-Ching Cheng

53 papers receiving 864 citations

Peers

Countries citing papers authored by Chao-Ching Cheng

Since Specialization

Citations

This map shows the geographic impact of Chao-Ching Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chao-Ching Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chao-Ching Cheng more than expected).

Fields of papers citing papers by Chao-Ching Cheng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chao-Ching Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chao-Ching Cheng. The network helps show where Chao-Ching Cheng may publish in the future.

Co-authors

The 25 scholars most cited alongside Chao-Ching Cheng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chao-Ching Cheng Line = papers co-authored together Chao-Ching Cheng links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 55 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Layered Semiconducting 2D Materials for Future Transistor Applications Small Structures ·Sheng‐Kai Su, Chih‐Piao Chuu, Mingyang Li, Chao-Ching Cheng, H.‐S. Philip Wong, Lain‐Jong Li	2021	126
2	Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics 2021 IEEE International Electron Devices Meeting (IEDM) ·Ang‐Sheng Chou, Tong Wu, Chao-Ching Cheng, Shun-Siang Zhan, I‐Chih Ni, Shih-Yun Wang, Yu‐Chen Chang, San‐Lin Liew, Edward Chen, Wen‐Hao Chang, Chih‐I Wu, Jin Cai, H.‐S. Philip Wong, Han Wang	2021	71
3	High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$ IEEE Electron Device Letters ·Chao-Ching Cheng, S. H. Lin, Ke-Yin Jhou, W.J. Chen, C. P. Chou, F. S. Yeh, J. Hu, Moon Jung Hwang, T. Arikado, S. P. McAlister, Albert Chin	2008	62
4	High On-State Current in Chemical Vapor Deposited Monolayer MoS₂ nFETs With Sn Ohmic Contacts IEEE Electron Device Letters ·Ang‐Sheng Chou, Chao-Ching Cheng, San‐Lin Liew, Po‐Hsun Ho, Shih-Yun Wang, Yu‐Chen Chang, Che-Kang Chang, Yuan-Chun Su, Zheng-Da Huang, Fang‐Yu Fu, Chen-Feng Hsu, Yun-Yan Chung, Wen‐Hao Chang, Lain‐Jong Li, Chih‐I Wu	2020	55
5	First Demonstration of GAA Monolayer-MoS₂ Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length 2022 International Electron Devices Meeting (IEDM) ·Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu, Wei‐Sheng Yun, Ming‐Yang Li, Sheng‐Kai Su, Yu-Tsung Liao, Meng-Chien Lee, Guo‐Wei Huang, San‐Lin Liew, Yun-Yang Shen, Wen‐Hao Chang, Chien-Wei Chen, Chi‐Chung Kei, Han Wang, H.‐S. Philip Wong, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana Radu	2022	52
6	First demonstration of 40-nm channel length top-gate WS₂ pFET using channel area-selective CVD growth directly on SiO_x/Si substrate Chao-Ching Cheng, Yun-Yan Chung, Uing-Yang Li, Chao-Ting Lin, Chi-Feng Li, Jyun‐Hong Chen, Tung‐Yen Lai, Kai‐Shin Li, Jia‐Min Shieh, Sheng‐Kai Su, Hung-Li Chiang, Tzu-Chiang Chen, Lain‐Jong Li, H.‐S. Philip Wong, Chao-Hsin Chien	2019	30
7	Low cost silver alloy wire bonding with excellent reliability performance Chao-Ching Cheng, Hsi-Lien Hsiao, S. Chu, Yung‐Hsin Shieh, Chuandong Sun, Chien‐Yu Peng	2013	29
8	High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping Ang‐Sheng Chou, Pin‐Chun Shen, Chao-Ching Cheng, Li‐Syuan Lu, Wei-Chen Chueh, Ming‐Yang Li, Gregory Pitner, Wen‐Hao Chang, Chih‐I Wu, Jing Kong, Lain‐Jong Li, H.‐S. Philip Wong	2020	28
9	Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS₂ ACS Nano ·Zheng Sun, Chin‐Sheng Pang, Peng Wu, Terry Y.T. Hung, Ming‐Yang Li, San Lin Liew, Chao-Ching Cheng, Han Wang, H.‐S. Philip Wong, Lain‐Jong Li, Iuliana Radu, Zhihong Chen, Joerg Appenzeller	2022	24
10	High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method ACS Nano ·Po‐Hsun Ho, Ren‐Hao Cheng, Po-Heng Pao, Sui-An Chou, (unknown), Yuying Yang, Yu-Syuan Wu, Yuan-Chun Su, Po‐Sen Mao, Sheng‐Kai Su, Bo-Jhih Chou, Edward Chen, Terry Y.T. Hung, Ming‐Yang Li, Chao-Ching Cheng, Wei-Yen Woon, Szuya Sandy Liao, Wen‐Hao Chang, Chao-Hsin Chien	2023	23
11	Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Sheng‐Kai Su, Edward Chen, Terry Y.T. Hung, Mengzhan Li, Gregory Pitner, Chao-Ching Cheng, Han Wang, Jin Cai, H.‐S. Philip Wong, Iuliana Radu	2022	22
12	High-Performance WSe₂ Top-Gate Devices with Strong Spacer Doping Nano Letters ·Po‐Hsun Ho, Yuying Yang, Sui-An Chou, Ren‐Hao Cheng, Po-Heng Pao, Chao-Ching Cheng, Iuliana Radu, Chao-Hsin Chien	2023	21
13	Energy-Efficient Monolithic 3-D SRAM Cell With BEOL MoS₂ FETs for SoC Scaling IEEE Transactions on Electron Devices ·Vita Pi‐Ho Hu, Chengwei Su, Yen-Wei Lee, Tun-Yi Ho, Chao-Ching Cheng, Tzu-Chiang Chen, Terry Y.T. Hung, Jin-Fu Li, Yuguang Chen, Lain‐Jong Li	2020	17
14	Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂ Transistor 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Ming‐Yang Li, Ching-Hao Hsu, Shin‐Wei Shen, Ang‐Sheng Chou, Yuxuan Lin, Chih‐Piao Chuu, Ning Yang, Sui-An Chou, Lin-Yun Huang, Chao-Ching Cheng, Wei-Yen Woon, Szuya Sandy Liao, Chih‐I Wu, Lain‐Jong Li, Iuliana Radu, H.‐S. Philip Wong, Han Wang	2022	17
15	Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode IEEE Electron Device Letters ·Chao-Ching Cheng, Han Pan, Chaoyi Huang, C. P. Chou, C. N. Hsiao, J. Hu, Moon Jung Hwang, T. Arikado, S. P. McAlister, Albert Chin	2008	17
16	Pinning-Free Edge Contact Monolayer MoS₂ FET Terry Y.T. Hung, Shih-Yun Wang, Chih‐Piao Chuu, Yun-Yan Chung, Ang‐Sheng Chou, Feng-Shew Huang, Tac Chen, Ming‐Yang Li, Chao-Ching Cheng, Jin Cai, Chao-Hsin Chien, Wen‐Hao Chang, H.‐S. Philip Wong, Lain‐Jong Li	2020	16
17	High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing 2021 IEEE International Electron Devices Meeting (IEDM) ·Vita Pi‐Ho Hu, Changju Liu, Hung-Li Chiang, Jer-Fu Wang, Chao-Ching Cheng, Tzu-Chiang Chen, Meng‐Fan Chang	2021	16
18	High-performance monolayer MoS₂ nanosheet GAA transistor Nanotechnology ·Bo-Jhih Chou, Yun-Yan Chung, Wei‐Sheng Yun, Chen‐Feng Hsu, Ming‐Yang Li, Sheng‐Kai Su, San‐Lin Liew, Vincent Duen‐Huei Hou, Chien‐Wei Chen, Chi‐Chung Kei, Yun-Yang Shen, Wen‐Hao Chang, T. Y. Lee, Chao-Ching Cheng, Iuliana Radu, Chao-Hsin Chien	2023	15
19	Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD- $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric IEEE Transactions on Electron Devices ·Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Ching-Lun Lin, Hung-Sen Chen, Juncheng Liu, Chi‐Chung Kei, Chien‐Nan Hsiao, Chun-Yen Chang	2009	14
20	InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate Xiao Gong, Qian Zhou, Man Hon Samuel Owen, Xin Xu, Dian Lei, Shuhan Chen, (unknown), Chao-Ching Cheng, You-Ru Lin, Cheng‐Hsien Wu, Chih-Hsin Ko, Yee‐Chia Yeo	2014	13

About Chao-Ching Cheng

Chao-Ching Cheng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Metals and Alloys, having authored 55 papers that have together received 880 indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), Ferroelectric and Negative Capacitance Devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), 2D Materials and Applications (15 papers), Nanowire Synthesis and Applications (11 papers), Advanced Memory and Neural Computing (10 papers), Graphene research and applications (6 papers) and Semiconductor Quantum Structures and Devices (6 papers). The work is most often cited by research in Materials Chemistry (573 citations), Electrical and Electronic Engineering (637 citations), Biomedical Engineering (171 citations), Electronic, Optical and Magnetic Materials (64 citations) and Atomic and Molecular Physics, and Optics (102 citations). Chao-Ching Cheng has collaborated with scholars based in Taiwan, United States and Singapore. Frequent co-authors include H.‐S. Philip Wong, Lain‐Jong Li, Sheng‐Kai Su, Chih‐Piao Chuu, Mingyang Li, Wen‐Hao Chang, Chao-Hsin Chien, Albert Chin, Ang‐Sheng Chou and Ming‐Yang Li. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Journal of The Electrochemical Society and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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About Chao-Ching Cheng

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