B. Holländer

2.0k citations

81 papers · 1.8k · h-index 24

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 70
- Semiconductor materials and devices 32
- Silicon and Solar Cell Technologies 31
- Advancements in Semiconductor Devices and Circuit Design 21
- Thin-Film Transistor Technologies 15
- Photonic and Optical Devices 14
- Integrated Circuits and Semiconductor Failure Analysis 13
Atomic and Molecular Physics, and Optics 34
- Semiconductor materials and interfaces 16
- Semiconductor Quantum Structures and Devices 15

Co-authors: S. Mantl (52 shared papers)Dan Buca (26 shared papers)H.-J. Herzog (10 shared papers)T. Hackbarth (7 shared papers)T. Stoïca (10 shared papers)E. Kasper (6 shared papers)Stephan Wirths (12 shared papers)H. Trinkaus (9 shared papers)
Journals: Applied Physics Letters (13 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (10 papers)Journal of Applied Physics (8 papers)Thin Solid Films (6 papers)Journal of Crystal Growth (4 papers)
Partner nations: Germany France United Kingdom

In The Last Decade

B. Holländer

79 papers receiving 1.7k citations

Peers

Countries citing papers authored by B. Holländer

Since Specialization

Citations

This map shows the geographic impact of B. Holländer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Holländer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Holländer more than expected).

Fields of papers citing papers by B. Holländer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Holländer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Holländer. The network helps show where B. Holländer may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Holländer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Holländer Line = papers co-authored together B. Holländer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 81 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Direct Bandgap Group IV Epitaxy on Si for Laser Applications Chemistry of Materials ·Nils von den Driesch, Daniela Stange, S. Wirths, Gregor Mußler, B. Holländer, Z. Ikonić, Jean‐Michel Hartmann, T. Stoïca, S. Mantl, Detlev Grützmacher, Dan Buca	2015	126
2	Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures Applied Physics Letters ·H. Trinkaus, B. Holländer, St. Rongen, S. Mantl, H.-J. Herzog, James A. Kuchenbecker, T. Hackbarth	2000	91
3	Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition Applied Physics Letters ·Erwan Rauwel, C. Dubourdieu, B. Holländer, N. Rochat, F. Ducroquet, Marta D. Rossell, G. Van Tendeloo, B. Pelissier	2006	81
4	Test of Vegard's law in thin epitaxial SiGe layers Journal of Crystal Growth ·E. Kasper, Alexander Schuh, G. Bauer, B. Holländer, H. Kibbel	1995	80
5	Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces Journal of Physics D Applied Physics ·B. Reuters, H. Hahn, Alexander Pooth, B. Holländer, U. Breuer, M. Heuken, H. Kalisch, Andrei Vescan	2014	71
6	Reduced Pressure CVD Growth of Ge and Ge_1−xSn_xAlloys ECS Journal of Solid State Science and Technology ·Stephan Wirths, Dan Buca, Gregor Mußler, A. T. Tiedemann, B. Holländer, P. Bernardy, T. Stoïca, Detlev Grützmacher, S. Mantl	2013	68
7	Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn Journal of Crystal Growth ·Michael Oehme, Dan Buca, Konrad Kostecki, Stephan Wirths, B. Holländer, E. Kasper, Jörg Schulze	2013	66
8	Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates Journal of Applied Physics ·M. Luysberg, D. Kirch, H. Trinkaus, B. Holländer, St. Lenk, S. Mantl, H.-J. Herzog, T. Hackbarth, P.F.P. Fichtner	2002	59
9	Tensely strained GeSn alloys as optical gain media Applied Physics Letters ·Stephan Wirths, Z. Ikonić, A. T. Tiedemann, B. Holländer, T. Stoïca, Gregor Mußler, U. Breuer, Jean‐Michel Hartmann, A. Benedetti, S. Chiussi, Detlev Grützmacher, S. Mantl, Dan Buca	2013	57
10	Strain relaxation of pseudomorphic /(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·B. Holländer, St. Lenk, S. Mantl, H. Trinkaus, D. Kirch, M. Luysberg, T. Hackbarth, H.-J. Herzog, P.F.P. Fichtner	2001	57
11	Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon Applied Physics Letters ·L. F. Edge, Darrell G. Schlom, P. Sivasubramani, Robert M. Wallace, B. Holländer, J. Schubert	2006	51
12	High performance Si/Si/sub 1-x/Ge_x resonant tunneling diodes IEEE Electron Device Letters ·P. See, Douglas J. Paul, B. Holländer, S. Mantl, Igor Zozoulenko, Karl‐Fredrik Berggren	2001	51
13	SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications Thin Solid Films ·Stephan Wirths, Dan Buca, Z. Ikonić, P. Harrison, A. T. Tiedemann, B. Holländer, T. Stoïca, Gregor Mußler, U. Breuer, Jean‐Michel Hartmann, Detlev Grützmacher, S. Mantl	2013	50
14	Interdiffusion and thermally induced strain relaxation in strainedSi1−xGex/Si superlattices Physical review. B, Condensed matter ·B. Holländer, R. Butz, S. Mantl	1992	48
15	Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·S. Mantl, B. Holländer, R. Liedtke, S. Mesters, H.-J. Herzog, H. Kibbel, T. Hackbarth	1999	47
16	Epitaxial phase stabilisation phenomena in rare earth manganites Thin Solid Films ·Alexey Bosak, А. А. Каменев, I. E. Graboy, С. В. Антонов, O. Yu. Gorbenko, A. R. Kaul, Catherine Dubourdieu, J.P. Sénateur, V. L. Svechnikov, H.W. Zandbergen, B. Holländer	2001	46
17	Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H+ ion implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·B. Holländer, S. Mantl, R. Liedtke, S. Mesters, H.-J. Herzog, H. Kibbel, T. Hackbarth	1999	43
18	Boron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells Journal of Non-Crystalline Solids ·Andreas Lambertz, F. Finger, B. Holländer, J.K. Rath, R.E.I. Schropp	2012	41
19	Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers Journal of Electronic Materials ·B. Reuters, Ada Wille, N. Ketteniss, H. Hahn, B. Holländer, M. Heuken, H. Kalisch, Andrei Vescan	2013	32
20	Strain measurements and thermal stability of Si_1−xGe_x/Si strained layers Journal of materials research/Pratt's guide to venture capital sources ·B. Holländer, S. Mantl, B. Stritzker, H. Jorke, E. Kasper	1989	29

About B. Holländer

B. Holländer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 81 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (32 papers), Silicon and Solar Cell Technologies (31 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and interfaces (16 papers), Semiconductor Quantum Structures and Devices (15 papers), Thin-Film Transistor Technologies (15 papers), Photonic and Optical Devices (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Atomic and Molecular Physics, and Optics (695 citations), Condensed Matter Physics (219 citations), Materials Chemistry (528 citations) and Electronic, Optical and Magnetic Materials (192 citations). B. Holländer has collaborated with scholars based in Germany, France and United Kingdom. Frequent co-authors include S. Mantl, Dan Buca, H.-J. Herzog, T. Hackbarth, T. Stoïca, E. Kasper, Stephan Wirths, H. Trinkaus, Gregor Mußler and Detlev Grützmacher. Their work appears in journals such as Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Applied Physics, Thin Solid Films and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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